ACNP - Italian Periodicals Catalogue

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Results: 1-24 |

Results: 24

INVESTIGATION OF GROWTH MODE BEHAVIOR AND SURFACE-MORPHOLOGY EVOLUTION OF METALORGANIC VAPOR-PHASE EPITAXY-GROWN ZNTE LAYERS ON (001)GAAS

Authors: LONGO M LOVERGINE N MANCINI AM LEO G BERTI M

Citation: M. Longo et al., INVESTIGATION OF GROWTH MODE BEHAVIOR AND SURFACE-MORPHOLOGY EVOLUTION OF METALORGANIC VAPOR-PHASE EPITAXY-GROWN ZNTE LAYERS ON (001)GAAS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(5), 1998, pp. 2650-2655

STRANSKI-KRASTANOW SELF-ORGANIZED GROWTH OF NANO-SCALE ZNTE ISLANDS ON (001)GAAS BY METALORGANIC VAPOR-PHASE EPITAXY

Authors: LOVERGINE N LONGO M MANCINI AM LEO G MAZZER M BERTI M DRIGO AV

Citation: N. Lovergine et al., STRANSKI-KRASTANOW SELF-ORGANIZED GROWTH OF NANO-SCALE ZNTE ISLANDS ON (001)GAAS BY METALORGANIC VAPOR-PHASE EPITAXY, Journal of materials science. Materials in electronics, 9(3), 1998, pp. 249-253

MOVPE GROWTH OF WIDE BAND-GAP II-VI COMPOUNDS FOR NEAR-UV AND DEEP-BLUE LIGHT-EMITTING DEVICES

Authors: LOVERGINE N PRETE P LEO G CALCAGNILE L CINGOLANI R MANCINI AM ROMANATO F DRIGO AV

Citation: N. Lovergine et al., MOVPE GROWTH OF WIDE BAND-GAP II-VI COMPOUNDS FOR NEAR-UV AND DEEP-BLUE LIGHT-EMITTING DEVICES, Crystal research and technology, 33(2), 1998, pp. 183-195

ZNSE ZNS SINGLE QUANTUM-WIRE HETEROSTRUCTURES EMITTING IN THE NEAR-ULTRAVIOLET REGION/

Authors: RINALDI R TURCO C LOVERGINE N CINGOLANI R VASANELLI L DIFABRIZIO E GRELLA L GENTILI M

Citation: R. Rinaldi et al., ZNSE ZNS SINGLE QUANTUM-WIRE HETEROSTRUCTURES EMITTING IN THE NEAR-ULTRAVIOLET REGION/, PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 1-2, 1998, pp. 199-204

STRANSKI-KRASTANOW MOVPE GROWTH OF NANOSCALE ZNTE ISLANDS ON (001)GAAS

Authors: LEO G LONGO M LOVERGINE N MAZZER M MANCINI AM BERTI M DRIGO AV

Citation: G. Leo et al., STRANSKI-KRASTANOW MOVPE GROWTH OF NANOSCALE ZNTE ISLANDS ON (001)GAAS, Journal of crystal growth, 185, 1998, pp. 1332-1334

LOW-TEMPERATURE METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF ZNS USING DIETHYLDISULPHIDE AS A SULFUR PRECURSOR

Authors: PRETE P LOVERGINE N CANNOLETTA D MANCINI AM MELE G VASAPOLLO G

Citation: P. Prete et al., LOW-TEMPERATURE METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF ZNS USING DIETHYLDISULPHIDE AS A SULFUR PRECURSOR, Journal of applied physics, 84(11), 1998, pp. 6460-6462

SELF-ORGANIZED GROWTH OF ZNTE NANOSCALE ISLANDS ON (001)GAAS

Authors: LONGO M LOVERGINE N MANCINI AM PASSASEO A LEO G MAZZER M BERTI M DRIGO AV

Citation: M. Longo et al., SELF-ORGANIZED GROWTH OF ZNTE NANOSCALE ISLANDS ON (001)GAAS, Applied physics letters, 72(3), 1998, pp. 359-361

DEEP BLUE-EMITTING ZNS ZNSE MULTIPLE-QUANTUM-WELL LASERS GROWN BY MOVPE ON (001)GAAS/

Authors: MAZZER M CALCAGNILE L LEO G SALVIATI G ZANOTTIFREGONARA C LOVERGINE N PRETE P IMBRIANI G CINGOLANI R MANCINI AM ROMANATO F DRIGO AV

Citation: M. Mazzer et al., DEEP BLUE-EMITTING ZNS ZNSE MULTIPLE-QUANTUM-WELL LASERS GROWN BY MOVPE ON (001)GAAS/, Materials science & engineering. B, Solid-state materials for advanced technology, 43(1-3), 1997, pp. 97-101

OPTICAL-PROPERTIES OF MOVPE-GROWN ZNS EPILAYERS ON (100) GAAS

Authors: FERNANDEZ M PRETE P LOVERGINE N MANCINI AM CINGOLANI R VASANELLI L PERRONE MR

Citation: M. Fernandez et al., OPTICAL-PROPERTIES OF MOVPE-GROWN ZNS EPILAYERS ON (100) GAAS, Physical review. B, Condensed matter, 55(12), 1997, pp. 7660-7666

STRUCTURAL CHARACTERIZATION AND SURFACE LATTICE STRAIN DETERMINATION OF ZNS GAAS HETEROSTRUCTURES GROWN BY METALORGANIC VAPOR-PHASE EPITAXY/

Authors: LEO G LAZZARINI L LOVERGINE N ROMANATO F DRIGO AV

Citation: G. Leo et al., STRUCTURAL CHARACTERIZATION AND SURFACE LATTICE STRAIN DETERMINATION OF ZNS GAAS HETEROSTRUCTURES GROWN BY METALORGANIC VAPOR-PHASE EPITAXY/, Journal of crystal growth, 173(3-4), 1997, pp. 277-284

STRUCTURAL STUDY OF (100)CDTE EPILAYERS GROWN BY MOVPE ON ZNTE BUFFERED AND UNBUFFERED (100)GAAS

Authors: MAZZER M LONGO M LEO G LOVERGINE N MANCINI AM DRIGO AV ROMANATO F FREGONARA CZ SALVIATI G

Citation: M. Mazzer et al., STRUCTURAL STUDY OF (100)CDTE EPILAYERS GROWN BY MOVPE ON ZNTE BUFFERED AND UNBUFFERED (100)GAAS, Journal of crystal growth, 170(1-4), 1997, pp. 553-557

GROWTH OF ZNTE BY METALORGANIC VAPOR-PHASE EPITAXY - SURFACE-ADSORPTION REACTIONS, PRECURSOR STOICHIOMETRY EFFECTS, AND OPTICAL STUDIES

Authors: LOVERGINE N LONGO M PRETE P GERARDI C CALCAGNILE L CINGOLANI R MANCINI AM

Citation: N. Lovergine et al., GROWTH OF ZNTE BY METALORGANIC VAPOR-PHASE EPITAXY - SURFACE-ADSORPTION REACTIONS, PRECURSOR STOICHIOMETRY EFFECTS, AND OPTICAL STUDIES, Journal of applied physics, 81(2), 1997, pp. 685-692

FREESTANDING ZNSE ZNS QUANTUM WIRES WITH HIGH LUMINESCENCE EFFICIENCY/

Authors: RINALDI R TURCO C LOVERGINE N CINGOLANI R VASANELLI L DIFABRIZIO E GRELLA L GENTILI M DECARO L TAPFER L

Citation: R. Rinaldi et al., FREESTANDING ZNSE ZNS QUANTUM WIRES WITH HIGH LUMINESCENCE EFFICIENCY/, Applied physics letters, 71(26), 1997, pp. 3770-3772

IMPACT OF ELECTRON CONFINEMENT ON THE LASING PROPERTIES OF ZNS ZNSE SUPERLATTICES/

Authors: CINGOLANI R PRETE P LOMASCOLO M COLI G CALCAGNILE L LOVERGINE N SALVIATI G LAZZARINI L

Citation: R. Cingolani et al., IMPACT OF ELECTRON CONFINEMENT ON THE LASING PROPERTIES OF ZNS ZNSE SUPERLATTICES/, Applied physics letters, 70(22), 1997, pp. 2943-2945

INFLUENCE OF A ZNTE BUFFER LAYER ON THE STRUCTURAL QUALITY OF CDTE EPILAYERS GROWN ON (100)GAAS BY METALORGANIC VAPOR-PHASE EPITAXY

Authors: LEO G LONGO M LOVERGINE N MANCINI AM VASANELLI L DRIGO AV ROMANATO F PELUSO T TAPFER L

Citation: G. Leo et al., INFLUENCE OF A ZNTE BUFFER LAYER ON THE STRUCTURAL QUALITY OF CDTE EPILAYERS GROWN ON (100)GAAS BY METALORGANIC VAPOR-PHASE EPITAXY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 1739-1744

OPTIMIZATION OF THE STRUCTURAL AND OPTICAL-PROPERTIES OF ZNS EPILAYERS GROWN ON (100)GAAS BY MOVPE

Authors: LEO G LOVERGINE N PRETE P LONGO M CINGOLANI R MANCINI AM ROMANATO F DRIGO AV

Citation: G. Leo et al., OPTIMIZATION OF THE STRUCTURAL AND OPTICAL-PROPERTIES OF ZNS EPILAYERS GROWN ON (100)GAAS BY MOVPE, Journal of crystal growth, 159(1-4), 1996, pp. 144-147

INHOMOGENEOUS STRAIN RELAXATION AND DETECT DISTRIBUTION OF ZNTE LAYERS DEPOSITED ON (110)GAAS BY METALORGANIC VAPOR-PHASE EPITAXY (VOL 78, PG 229, 1995)

Authors: LOVERGINE N LIACI F GANIERE JD LEO G DRIGO AV ROMANTO F MANCINI AM VASANELLI L

Citation: N. Lovergine et al., INHOMOGENEOUS STRAIN RELAXATION AND DETECT DISTRIBUTION OF ZNTE LAYERS DEPOSITED ON (110)GAAS BY METALORGANIC VAPOR-PHASE EPITAXY (VOL 78, PG 229, 1995), Journal of applied physics, 79(1), 1996, pp. 562-562

RESIDUAL AND THERMAL STRAIN OF ZNS EPITAXIAL LAYERS GROWN ON [100]-GAAS BY VAPOR-PHASE EPITAXY

Authors: GIANNINI C TAPFER L PELUSO T LOVERGINE N VASANELLI L

Citation: C. Giannini et al., RESIDUAL AND THERMAL STRAIN OF ZNS EPITAXIAL LAYERS GROWN ON [100]-GAAS BY VAPOR-PHASE EPITAXY, Journal of physics. D, Applied physics, 28(4A), 1995, pp. 125-128

METALORGANIC VAPOR-PHASE EPITAXY GROWTH OF ZNS LAYERS BY (T-BU)SH ANDME(2)ZN-ET(3)N PRECURSORS

Authors: LOVERGINE N LONGO M GERARDI C MANNO D MANCINI AM VASANELLI L

Citation: N. Lovergine et al., METALORGANIC VAPOR-PHASE EPITAXY GROWTH OF ZNS LAYERS BY (T-BU)SH ANDME(2)ZN-ET(3)N PRECURSORS, Journal of crystal growth, 156(1-2), 1995, pp. 45-51

INHOMOGENEOUS STRAIN RELAXATION AND DEFECT DISTRIBUTION OF ZNTE LAYERS DEPOSITED ON (100)GAAS BY METALORGANIC VAPOR-PHASE EPITAXY

Authors: LOVERGINE N LIACI L GANIERE JD LEO G DRIGO AV ROMANATO F MANCINI AM VASANELLI L

Citation: N. Lovergine et al., INHOMOGENEOUS STRAIN RELAXATION AND DEFECT DISTRIBUTION OF ZNTE LAYERS DEPOSITED ON (100)GAAS BY METALORGANIC VAPOR-PHASE EPITAXY, Journal of applied physics, 78(1), 1995, pp. 229-235

STRUCTURAL-ANALYSIS OF ZNS GAAS HETEROSTRUCTURES GROWN BY HYDROGEN TRANSPORT VAPOR-PHASE EPITAXY/

Authors: GIANNINI C PELUSO T GERARDI C TAPFER L LOVERGINE N VASANELLI L

Citation: C. Giannini et al., STRUCTURAL-ANALYSIS OF ZNS GAAS HETEROSTRUCTURES GROWN BY HYDROGEN TRANSPORT VAPOR-PHASE EPITAXY/, Journal of applied physics, 77(6), 1995, pp. 2429-2434

LATTICE STRAIN RELAXATION OF ZNS LAYERS GROWN BY VAPOR-PHASE EPITAXY ON (100)GAAS

Authors: LOVERGINE N LEO G MANCINI AM ROMANATO F DRIGO AV GIANNINI C TAPFER L

Citation: N. Lovergine et al., LATTICE STRAIN RELAXATION OF ZNS LAYERS GROWN BY VAPOR-PHASE EPITAXY ON (100)GAAS, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 55-60

EXCITONIC PROPERTIES OF ZNSE ZNSES SUPERLATTICES/

Authors: CINGOLANI R LOMASCOLO M LOVERGINE N DABBICCO M FERRARA M SUEMUNE I

Citation: R. Cingolani et al., EXCITONIC PROPERTIES OF ZNSE ZNSES SUPERLATTICES/, Applied physics letters, 64(18), 1994, pp. 2439-2441

DETERMINATION OF SURFACE LATTICE STRAIN IN ZNTE EPILAYERS ON (100)GAAS BY ION CHANNELING AND REFLECTANCE SPECTROSCOPY

Authors: LOVERGINE N CINGOLANI R LEO G MANCINI AM VASANELLI L ROMANATO F DRIGO AV MAZZER M

Citation: N. Lovergine et al., DETERMINATION OF SURFACE LATTICE STRAIN IN ZNTE EPILAYERS ON (100)GAAS BY ION CHANNELING AND REFLECTANCE SPECTROSCOPY, Applied physics letters, 63(25), 1993, pp. 3452-3454

Risultati: 1-24 |