Authors: LISOVSKII IP LITOVCHENKO VG LOZINSKII VB

Citation: Ip. Lisovskii et al., EFFECT OF UV ANNEALING OF RADIATION-DAMAGE IN SIO2-FILMS, Applied surface science, 86(1-4), 1995, pp. 299-302

Authors: LISOVSKII IP LITOVCHENKO VG LOZINSKII VB FROLOV SI FLIETNER H FUSSEL W SCHMIDT EG

Citation: Ip. Lisovskii et al., IR STUDY OF SHORT-RANGE AND LOCAL ORDER IN SIO2 AND SIOX FILMS, Journal of non-crystalline solids, 187, 1995, pp. 91-95

Authors: LISOVSKII IP LITOVCHENKO VG KHATHKO VV LOZINSKII VB SHMIDT EG GROMASHEVSKII VL SOPINSKII NV RUMAK NV TATJANENKO NI

Citation: Ip. Lisovskii et al., PROPERTIES OF SUPERTHIN SIO2 LAYERS PRODU CED BY THERMAL-OXIDATION OFSILICON, UKRAINSKII FIZICHESKII ZHURNAL, 39(5-6), 1994, pp. 730-736

Authors: LISOVSKII IP LITOVCHENKO VG LOZINSKII VB POPOV VG ROMANYUK BN MISIUK A SWOBODA G

Citation: Ip. Lisovskii et al., CHARACTERISTICS OF OXYGEN-CONTAINING SILI CON SINGLE-CRYSTALS SUBJECTED TO LONG-TERM THERMAL TREATMENTS, UKRAINSKII FIZICHESKII ZHURNAL, 39(1), 1994, pp. 68-73

Authors: LISOVSKII IP LITOVCHENKO VG LOZINSKII VB MELNIK VP FROLOV SI

Citation: Ip. Lisovskii et al., STRUCTURE OF THE MODIFIED SURFACE-LAYER FORMED BY ION-BOMBARDMENT OF SIO2-FILMS, Thin solid films, 247(2), 1994, pp. 264-270