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Results:
1-20
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Results: 20
Authors:
BOTTCHER T
EINFELDT S
FIGGE S
KIRCHNER V
HOMMEL D
SELKE H
RYDER PL
BERTRAM F
RIEMANN T
CHRISTEN J
LUNZ U
BECKER CR
Citation: T. Bottcher et al., OPTICAL-PROPERTIES AND MICROSTRUCTURE OF INGAN GROWN BY MOLECULAR-BEAM EPITAXY, Acta Physica Polonica. A, 94(2), 1998, pp. 260-264
Authors:
LUNZ U
BECKER CR
FASCHINGER W
LANDWEHR G
Citation: U. Lunz et al., COMMENT ON QUATERNARY ALLOY ZN1-XMGXSYSE1-Y, Physical review. B, Condensed matter, 58(16), 1998, pp. 11052-11053
Authors:
WAAG A
LITZ T
FISCHER F
LUGAUER HJ
BARON T
SCHULL K
ZEHNDER U
GERHARD T
LUNZ U
KEIM M
REUSCHER G
LANDWEHR G
Citation: A. Waag et al., NOVEL BERYLLIUM CONTAINING II-VI COMPOUNDS - BASIC PROPERTIES AND POTENTIAL APPLICATIONS, Journal of crystal growth, 185, 1998, pp. 1-10
Authors:
KEIM M
LUNZ U
FISCHER F
WAAG A
LANDWEHR G
Citation: M. Keim et al., RESONANT-TUNNELING IN ZNSE BETE DOUBLE-BARRIER STRUCTURES/, Journal of crystal growth, 185, 1998, pp. 806-809
Authors:
LUNZ U
KEIM M
WAAG A
FASCHINGER W
LANDWEHR G
Citation: U. Lunz et al., TRANSVERSE MAGNETIC-FIELD STUDIES IN ZNSE BETE RESONANT-TUNNELING STRUCTURES/, Applied physics letters, 72(17), 1998, pp. 2120-2122
Authors:
WAAG A
FISCHER F
LUGAUER HJ
LITZ T
GERHARD T
NURNBERGER J
LUNZ U
ZEHNDER U
OSSAU W
LANDWEHR G
ROOS B
RICHTER H
Citation: A. Waag et al., BERYLLIUM CHALCOGENIDES FOR ZNSE-BASED LIGHT-EMITTING DEVICES, Materials science & engineering. B, Solid-state materials for advanced technology, 43(1-3), 1997, pp. 65-70
Authors:
LITZ T
LUGAUER HJ
FISCHER F
ZEHNDER U
LUNZ U
GERHARD T
RESS H
WAAG A
LANDWEHR G
Citation: T. Litz et al., MOLECULAR-BEAM EPITAXY OF BE-RELATED II-VI COMPOUNDS, Materials science & engineering. B, Solid-state materials for advanced technology, 43(1-3), 1997, pp. 83-87
Authors:
LANDWEHR G
FISCHER F
BARON T
LITZ T
WAAG A
SCHULL K
LUGAUER H
GERHARD T
KEIM M
LUNZ U
Citation: G. Landwehr et al., RECENT RESULTS ON BERYLLIUM CHALCOGENIDES, Physica status solidi. b, Basic research, 202(2), 1997, pp. 645-655
Authors:
LUNZ U
SCHUMACHER C
NURNBERGER J
SCHULL K
GERHARD A
SCHUSSLER U
JOBST B
FASCHINGER W
LANDWEHR G
Citation: U. Lunz et al., THE ENERGY-GAP E-G OF ZN1-XMGXSYSE1-Y EPITAXIAL LAYERS AS A FUNCTION OF COMPOSITION AND TEMPERATURE, Semiconductor science and technology, 12(8), 1997, pp. 970-973
Authors:
SCHULL K
SPAHN W
HOCK V
LUNZ U
EHINGER M
FASCHINGER W
LANDWEHR G
Citation: K. Schull et al., NONMETAL IN-SITU AND EX-SITU OHMIC CONTACTS TO N-ZNSE, Semiconductor science and technology, 12(4), 1997, pp. 485-489
Authors:
JOBST B
LUNZ U
HOMMEL D
LANDWEHR G
Citation: B. Jobst et al., A COMPARISON OF MG AND CA FOR QUATERNARY CLADDING LAYERS IN ZNSE BASED LASER-DIODES, Journal of crystal growth, 159(1-4), 1996, pp. 32-35
Authors:
LITZ MT
WATANABE K
KORN M
RESS H
LUNZ U
OSSAU W
WAAG A
LANDWEHR G
WALTER T
NEUBAUER B
GERTHSEN D
SCHUSSLER U
Citation: Mt. Litz et al., EPITAXY OF ZN1-XMGXSEYTE1-Y ON (100)INAS, Journal of crystal growth, 159(1-4), 1996, pp. 54-57
Authors:
OEHLING S
LUNZ U
HEINKE H
PLAHL G
BECKER CR
LANDWEHR G
Citation: S. Oehling et al., THE BAND-GAP OF HG1-XMGXTE GROWN BY MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 159(1-4), 1996, pp. 1157-1160
Authors:
WAAG A
FISCHER F
LUGAUER HJ
LITZ T
LAUBENDER J
LUNZ U
ZEHNDER U
OSSAU W
GERHARDT T
MOLLER M
LANDWEHR G
Citation: A. Waag et al., MOLECULAR-BEAM EPITAXY OF BERYLLIUM-CHALCOGENIDE-BASED THIN-FILMS ANDQUANTUM-WELL STRUCTURES, Journal of applied physics, 80(2), 1996, pp. 792-796
Authors:
LUNZ U
KUHN J
GOSCHENHOFER F
SCHUSSLER U
EINFELDT S
BECKER CR
LANDWEHR G
Citation: U. Lunz et al., TEMPERATURE-DEPENDENCE OF THE ENERGY-GAP OF ZINCBLENDE CDSE AND CD(1-X)ZN(X)E EPITAXIAL LAYERS, Journal of applied physics, 80(12), 1996, pp. 6861-6863
Authors:
LUNZ U
KEIM M
REUSCHER G
FISCHER F
SCHULL K
WAAG A
LANDWEHR G
Citation: U. Lunz et al., RESONANT ELECTRON-TUNNELING IN ZNSE BETE DOUBLE-BARRIER, SINGLE-QUANTUM-WELL HETEROSTRUCTURES/, Journal of applied physics, 80(11), 1996, pp. 6329-6332
Authors:
JOBST B
LUNZ U
ZERLAUTH S
CERVA H
HOMMEL D
LANDWEHR G
Citation: B. Jobst et al., MOLECULAR-BEAM-EPITAXIAL GROWTH AND CHARACTERIZATION OF ZN1-XCAXSYSE1-Y ALLOYS FOR BLUE-GREEN LASER APPLICATIONS, Journal of applied physics, 79(2), 1996, pp. 763-767
Authors:
JOBST B
HOMMEL D
LUNZ U
GERHARD T
LANDWEHR G
Citation: B. Jobst et al., E(0) BAND-GAP ENERGY AND LATTICE-CONSTANT OF TERNARY ZN1-XMGXSE AS FUNCTIONS OF COMPOSITION, Applied physics letters, 69(1), 1996, pp. 97-99
Authors:
EINFELDT S
LUNZ U
HEINKE H
BECKER CR
LANDWEHR G
Citation: S. Einfeldt et al., MOLECULAR-BEAM EPITAXIAL-GROWTH AND SEGREGATION OF HG1-XZNXSE ALLOYS, Journal of crystal growth, 146(1-4), 1995, pp. 427-432
Authors:
LUNZ U
JOBST B
EINFELDT S
BECKER CR
HOMMEL D
LANDWEHR G
Citation: U. Lunz et al., OPTICAL-PROPERTIES OF ZN1-XMGXSYSE1-Y EPITAXIAL LAYERS FOR BLUE-GREENLASER APPLICATIONS, Journal of applied physics, 77(10), 1995, pp. 5377-5380
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