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Results: 1-25/29
Authors:
SVOB L
MARFAING Y
CLERJAUD B
COTE D
LEBKIRI A
DRUILHE R
LUSSON A
GRATTEPAIN C
Citation: L. Svob et al., ANNEALING KINETICS OF HYDROGENATED AS ACCEPTORS IN MOVPE GROWN CDTE, Semiconductor science and technology, 13(1), 1998, pp. 79-85
Authors:
LEMASSON P
NDAP JO
FUSIL S
RIVIERE A
QUHEN B
LUSSON A
NEU G
TOURNIE E
GEOFFROY G
ZOZIME A
TRIBOULET R
Citation: P. Lemasson et al., NEW RESULTS AND TRENDS IN THE SOLID-PHASE RECRYSTALLIZATION OF ZNSE, Materials letters, 36(1-4), 1998, pp. 162-166
Authors:
CHEVALLIER J
THEYS B
LUSSON A
GRATTEPAIN C
DENEUVILLE A
GHEERAERT E
Citation: J. Chevallier et al., HYDROGEN-BORON INTERACTIONS IN P-TYPE DIAMOND, Physical review. B, Condensed matter, 58(12), 1998, pp. 7966-7969
Authors:
THIANDOUME C
KA O
LUSSON A
COHEN C
BOUANANI A
ROMMELUERE M
TROMSONCARLI A
GOROCHOV O
Citation: C. Thiandoume et al., MOVPE GROWTH OF ZNSXSE1-X GAAS(100) USING DITERTIARYBUTYLSELENIUM, TERTIARYBUTYLMERCAPTAN AND DIMETHYLZINC TRIETHYLAMINE AS PRECURSORS/, Journal of crystal growth, 185, 1998, pp. 149-152
Authors:
PELLETIER K
THEYS B
LUSSON A
CHEVALLIER J
MAGNEA N
Citation: K. Pelletier et al., NEUTRALIZATION OF NITROGEN ACCEPTORS IN MBE-GROWN ZNTE BY INTENTIONALDIFFUSION OF HYDROGEN, Journal of crystal growth, 185, 1998, pp. 419-424
Authors:
SVOB L
CHEZE I
LUSSON A
BALLUTAUD D
ROMMELUERE JF
MARFAING Y
Citation: L. Svob et al., CRYSTALLOGRAPHIC ORIENTATION DEPENDENCE OF AS INCORPORATION IN MOVPE-GROWN CDTE AND CORRESPONDING ACCEPTOR ELECTRICAL STATE ACTIVATION, Journal of crystal growth, 185, 1998, pp. 459-464
Authors:
FUSIL S
LEMASSON P
NDAP JO
RIVIERE A
LUSSON A
NEU G
TOURNIE E
GEOFFROY G
ZOZIME A
TRIBOULET R
Citation: S. Fusil et al., NEW RESULTS ON THE SOLID-PHASE RECRYSTALLIZATION OF ZNSE, Journal of crystal growth, 185, 1998, pp. 1021-1025
Authors:
NTEP JM
BARBE M
COHENSOLAL G
BAILLY F
LUSSON A
TRIBOULET R
Citation: Jm. Ntep et al., ZNO GROWTH BY CHEMICALLY ASSISTED SUBLIMATION, Journal of crystal growth, 185, 1998, pp. 1026-1030
Authors:
FOUGERES P
HAGEALI M
KOEBEL JM
SIFFERT P
HASSAN S
LUSSON A
TRIBOULET R
MARRAKCHI G
ZERRAI A
CHERKAOUI K
ADHIRI R
BREMOND G
KAITASOV O
RUAULT MO
CRESTOU J
Citation: P. Fougeres et al., PROPERTIES OF CD1-XZNXTE CRYSTALS GROWN BY HIGH-PRESSURE BRIDGMAN FORNUCLEAR-DETECTION, Journal of crystal growth, 185, 1998, pp. 1313-1318
Authors:
MIMILAARROYO J
DIAZREYES J
LUSSON A
Citation: J. Mimilaarroyo et al., INDIUM-PHOSPHIDE VAPOR-PHASE EPITAXY AT HIGH GROWTH-RATES, GROWTH-KINETICS, AND CHARACTERIZATION, Journal of applied physics, 84(3), 1998, pp. 1572-1578
Authors:
RZEPKA E
LUSSON A
PONOMAREV EA
MUKHOPADHYAY K
SHARON M
LEVYCLEMENT C
Citation: E. Rzepka et al., RAMAN-SCATTERING INVESTIGATIONS OF SEMICONDUCTING DIAMOND-LIKE CARBONTHIN-FILMS AND FIBERS OBTAINED FROM CAMPHOR, Carbon (New York), 36(5-6), 1998, pp. 587-590
Authors:
PELLETIER H
LUSSON A
THEYS B
CHEVALLIER J
MAGNEA N
Citation: H. Pelletier et al., SPECTROSCOPIC EVIDENCE OF THE FORMATION OF N-H AND N-D COMPLEXES IN PLASMA HYDROGENATED AND DEUTERATED ZNTE-N LAYERS, Applied physics letters, 73(1), 1998, pp. 28-30
Authors:
LUSSON L
LUSSON A
ELKAIM P
DIXMIER J
BALLUTAUD D
Citation: L. Lusson et al., HYDROGEN CONFIGURATIONS AND STABILITY IN AMORPHOUS SPUTTERED SILICON, Journal of applied physics, 81(7), 1997, pp. 3073-3080
Authors:
MIMILAARROYO J
DIAZ J
LUSSON A
GRATTEPAIN C
BISARO R
BOURGOIN JC
Citation: J. Mimilaarroyo et al., GROWTH AND CHARACTERIZATION OF INP BY CLOSE VAPOR TRANSPORT, Materials science and technology, 12(2), 1996, pp. 178-180
Authors:
RZEPKA E
LUSSON A
RIVIERE A
AOUDIA A
MARFAING Y
TRIBOULET R
Citation: E. Rzepka et al., DEFECTS STUDY BY PHOTOLUMINESCENCE AND CATHODOLUMINESCENCE IN VANADIUM-DOPED CDZNTE, Journal of crystal growth, 161(1-4), 1996, pp. 286-291
Authors:
QUHEN B
KUHN WS
LUSSON A
GOROCHOV O
Citation: B. Quhen et al., METHYLALLYLTELLURIDE IN THE MOVPE OF ZNTE - DISSOCIATION MECHANISMS AND LAYER GROWTH, Journal of crystal growth, 159(1-4), 1996, pp. 138-143
Authors:
GUILLEMOLES JF
COWACHE P
LUSSON A
FEZZAA K
BOISIVON F
VEDEL J
LINCOT D
Citation: Jf. Guillemoles et al., ONE, STEP ELECTRODEPOSITION OF CUINSE2 - IMPROVED STRUCTURAL, ELECTRONIC, AND PHOTOVOLTAIC PROPERTIES BY ANNEALING UNDER HIGH SELENIUM PRESSURE, Journal of applied physics, 79(9), 1996, pp. 7293-7302
Authors:
KUHN WS
LUSSON A
QUHEN B
GRATTEPAIN C
DUMONT H
GOROCHOV O
BAUER S
WOLF K
WORZ M
REISINGER T
ROSENAUER A
WAGNER HP
STANZL H
GEBHARDT W
Citation: Ws. Kuhn et al., THE METAL-ORGANIC VAPOR-PHASE EPITAXY OF ZNTE .3. CORRELATION OF GROWTH AND LAYER PROPERTIES, Progress in crystal growth and characterization of materials, 31(1-2), 1995, pp. 119-177
Authors:
AOUDIA A
RZEPKA E
LUSSON A
TROMSONCARLI A
SCHNEIDER D
MARFAING Y
TRIBOULET R
Citation: A. Aoudia et al., CRYSTAL-GROWTH AND CHARACTERIZATION OF CDTE DOPED WITH TRANSITION-METAL ELEMENTS, Optical materials, 4(2-3), 1995, pp. 241-245
Authors:
TRIBOULET R
AOUDIA A
LUSSON A
Citation: R. Triboulet et al., ASSESSMENT OF THE PURITY OF CADMIUM AND TELLURIUM AS COMPONENTS OF THE CDTE-BASED SUBSTRATES, Journal of electronic materials, 24(9), 1995, pp. 1061-1065
Authors:
LUSSON A
MARFAING Y
OUADJAOUT D
MARIETTE H
LEGROS R
TRIBOULET R
Citation: A. Lusson et al., LOCALIZATION OF EXCITONS DUE TO ALLOY DIS ORDER IN THE SYSTEMS CDHGTE, ZNHGTE AND ZNCDTE, Annales de physique, 20(3), 1995, pp. 45-53
Authors:
GUILLEMOLES JF
LUSSON A
COWACHE P
MASSACCESI S
VEDEL J
LINCOT D
Citation: Jf. Guillemoles et al., RECRYSTALLIZATION OF ELECTRODEPOSITED COPPER INDIUM DISELENIDE THIN-FILMS IN AN ATMOSPHERE OF ELEMENTAL SELENIUM, Advanced materials, 6(5), 1994, pp. 376-379
Authors:
DUMONT H
LUSSON A
BOUREE JE
GOROCHOV O
Citation: H. Dumont et al., INFLUENCE OF LIGHT IRRADIATION ON ZNTE LAYERS GROWN BY MOVPE, Applied surface science, 80, 1994, pp. 275-280
Authors:
SALLET V
DRUILHE R
TROMSONCARLI A
LUSSON A
ROMMELUERE M
GRATTEPAIN C
MARFAING Y
TRIBOULET R
Citation: V. Sallet et al., NOVEL MODULATED FLOW TECHNIQUE FOR THE OMCVD GROWTH OF CDHGTE AT 300-DEGREES-C, Materials letters, 19(3-4), 1994, pp. 99-104
Authors:
QUHEN B
HELBING R
KUHN WS
BOUREE JE
LUSSON A
GOROCHOV O
Citation: B. Quhen et al., METALORGANIC VAPOR-PHASE EPITAXY GROWTH OF ZN1-XMGXTE LAYERS, Journal of crystal growth, 145(1-4), 1994, pp. 541-546