Authors: HENDERSON R WALTERS F REYNOLDS CL SWAMINATHAN V LUTHER LC SALVIATI G FERRARI C

Citation: R. Henderson et al., STRUCTURAL AND OPTICAL CHARACTERIZATION OF STRAINED AND STRAIN-COMPENSATED INGAASP INP QUANTUM-WELL LASER STRUCTURES/, Journal of crystal growth, 194(1), 1998, pp. 8-15

Authors: REYNOLDS CL SWAMINATHAN V GEVA M SMITH LE LUTHER LC

Citation: Cl. Reynolds et al., UNINTENTIONAL ZINC DIFFUSION IN INP PN-HOMOJUNCTIONS, Journal of electronic materials, 24(6), 1995, pp. 747-750

Authors: CATCHMARK JM MORGAN RA KOJIMA K LEIBENGUTH RE ASOM MT GUTH GD FOCHT MW LUTHER LC PRZYBYLEK GP MULLALLY T CHRISTODOULIDES DN

Citation: Jm. Catchmark et al., EXTENDED TEMPERATURE AND WAVELENGTH PERFORMANCE OF VERTICAL-CAVITY TOP SURFACE-EMITTING LASERS, Applied physics letters, 63(23), 1993, pp. 3122-3124

Authors: KATZ A FEINGOLD A MORIYA N NAKAHARA S ABERNATHY CR PEARTON SJ ELROY A GEVA M BAIOCCHI FA LUTHER LC LANE E

Citation: A. Katz et al., GROWTH OF INP EPITAXIAL LAYERS BY RAPID THERMAL LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION, USING TERTIARYBUTYLPHOSPHINE, Applied physics letters, 63(21), 1993, pp. 2958-2960

Authors: KATZ A FEINGOLD A MORIYA N PEARTON SJ GEVA M BAIOCCHI FA LUTHER LC LANE E

Citation: A. Katz et al., RAPID THERMAL LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF IN0.53GA0.47AS FILMS USING TERTIARYBUTYLARSINE, Applied physics letters, 63(19), 1993, pp. 2679-2681