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Results: 1-16 |
Results: 16
Effect of oxygen on the activation of Mg acceptor in GaN epilayers grown by metalorganic chemical vapor deposition
Authors: Chung, SH Lachab, M Wang, T Lacroix, Y Basak, D Fareed, Q Kawakami, Y Nishino, K Sakai, S
Citation: Sh. Chung et al., Effect of oxygen on the activation of Mg acceptor in GaN epilayers grown by metalorganic chemical vapor deposition, JPN J A P 1, 39(8), 2000, pp. 4749-4750
Characterization of Mg-doped GaN grown by metalorganic chemical vapor deposition
Authors: Lachab, M Youn, DH Fareed, RSQ Wang, T Sakai, S
Citation: M. Lachab et al., Characterization of Mg-doped GaN grown by metalorganic chemical vapor deposition, SOL ST ELEC, 44(9), 2000, pp. 1669-1677
Selective fabrication of InGaN nanostructures by the focused ion beam/metalorganic chemical vapor deposition process
Authors: Lachab, M Nozaki, M Wang, J Ishikawa, Y Fareed, Q Wang, T Nishikawa, T Nishino, K Sakai, S
Citation: M. Lachab et al., Selective fabrication of InGaN nanostructures by the focused ion beam/metalorganic chemical vapor deposition process, J APPL PHYS, 87(3), 2000, pp. 1374-1378
Effect of silicon doping on the optical and transport properties of InGaN/GaN multiple-quantum-well structures
Authors: Wang, T Saeki, H Bai, J Shirahama, T Lachab, M Sakai, S Eliseev, P
Citation: T. Wang et al., Effect of silicon doping on the optical and transport properties of InGaN/GaN multiple-quantum-well structures, APPL PHYS L, 76(13), 2000, pp. 1737-1739
Investigation on the P-type activation mechanism in Mg-doped GaN films grown by metalorganic chemical vapor deposition
Authors: Youn, DH Lachab, M Hao, MS Sugahara, T Takenaka, H Naoi, Y Sakai, S
Citation: Dh. Youn et al., Investigation on the P-type activation mechanism in Mg-doped GaN films grown by metalorganic chemical vapor deposition, JPN J A P 1, 38(2A), 1999, pp. 631-634
Investigation of InGaN/GaN quantum wells grown on sapphire and bulk GaN substrates
Authors: Sugahara, T Sakai, S Lachab, M Fareed, RSQ Tottori, S Wang, T
Citation: T. Sugahara et al., Investigation of InGaN/GaN quantum wells grown on sapphire and bulk GaN substrates, PHYS ST S-B, 216(1), 1999, pp. 273-277
Investigation of the optical properties in InGaN/GaN quantum well structure
Authors: Wang, T Nakagawa, D Lachab, M Sugahara, T Sakai, S
Citation: T. Wang et al., Investigation of the optical properties in InGaN/GaN quantum well structure, PHYS ST S-B, 216(1), 1999, pp. 279-285
MOCVD growth and transport investigation of two-dimensional electron gas in AlGaN/GaN heterostructures on sapphire substrates
Authors: Wang, T Ohno, Y Lachab, M Nakagawa, D Shirahama, T Sakai, S Ohno, H
Citation: T. Wang et al., MOCVD growth and transport investigation of two-dimensional electron gas in AlGaN/GaN heterostructures on sapphire substrates, PHYS ST S-B, 216(1), 1999, pp. 743-748
Structural, compositional and photoluminescence characteristics of CuInSe2thin films prepared by close-spaced vapor transport
Authors: Zouaoui, A Lachab, M Hidalgo, ML Chaffa, A Llinares, C Kesri, N
Citation: A. Zouaoui et al., Structural, compositional and photoluminescence characteristics of CuInSe2thin films prepared by close-spaced vapor transport, THIN SOL FI, 339(1-2), 1999, pp. 10-18
Growth of a GaN layer on a glass substrate by metal organic chemical vapordeposition
Authors: Wang, HX Wang, T Lachab, M Ishikawa, Y Hao, MS Oyama, K Nishino, K Sakai, S Tominaga, K
Citation: Hx. Wang et al., Growth of a GaN layer on a glass substrate by metal organic chemical vapordeposition, J CRYST GR, 206(3), 1999, pp. 241-244
Investigation of two-dimensional electron gas in A1GaN/GaN heterostructures grown by metalorganic chemical vapor deposition (MOCVD)
Authors: Wang, T Lachab, M Nakagawa, D Shirahama, T Sakai, S
Citation: T. Wang et al., Investigation of two-dimensional electron gas in A1GaN/GaN heterostructures grown by metalorganic chemical vapor deposition (MOCVD), J CRYST GR, 203(3), 1999, pp. 443-446
Formation and optical properties of InGaN/GaN nano-structures grown on amorphous Si substrates by MOCVD
Authors: Wang, J Nozaki, M Lachab, M Fareed, RSQ Ishikawa, Y Wang, T Naoi, Y Sakai, S
Citation: J. Wang et al., Formation and optical properties of InGaN/GaN nano-structures grown on amorphous Si substrates by MOCVD, J CRYST GR, 200(1-2), 1999, pp. 85-89
Metalorganic chemical vapor deposition selective growth and characterization of InGaN quantum dots
Authors: Wang, J Nozaki, M Lachab, M Ishikawa, Y Fareed, RSQ Wang, T Hao, M Sakai, S
Citation: J. Wang et al., Metalorganic chemical vapor deposition selective growth and characterization of InGaN quantum dots, APPL PHYS L, 75(7), 1999, pp. 950-952
Effect of reactive ion etching on the yellow luminescence of GaN
Authors: Basak, D Lachab, M Nakanishi, T Sakai, S
Citation: D. Basak et al., Effect of reactive ion etching on the yellow luminescence of GaN, APPL PHYS L, 75(23), 1999, pp. 3710-3712
Electron mobility exceeding 10(4) cm(2)/Vs in an AlGaN-GaN heterostructuregrown on a sapphire substrate
Authors: Wang, T Ohno, Y Lachab, M Nakagawa, D Shirahama, T Sakai, S Ohno, H
Citation: T. Wang et al., Electron mobility exceeding 10(4) cm(2)/Vs in an AlGaN-GaN heterostructuregrown on a sapphire substrate, APPL PHYS L, 74(23), 1999, pp. 3531-3533
Optical investigation of InGaN GaN multiple quantum wells
Authors: Wang, T Nakagawa, D Lachab, M Sugahara, T Sakai, S
Citation: T. Wang et al., Optical investigation of InGaN GaN multiple quantum wells, APPL PHYS L, 74(21), 1999, pp. 3128-3130
Risultati: 1-16 |