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Results:
1-7
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Results: 7
Authors:
Koester, SJ
Hammond, R
Chu, JO
Mooney, PM
Ott, JA
Perraud, L
Jenkins, KA
Webster, CS
Lagnado, I
de la Houssaye, PR
Citation: Sj. Koester et al., SiGe pMODFETs on silicon-on-sapphire substrates with 116 GHz f(max), IEEE ELEC D, 22(2), 2001, pp. 92-94
Authors:
Lagnado, I
de la Houssaye, PR
Citation: I. Lagnado et Pr. De La Houssaye, Integration of Si and SiGe with Al2O3 (sapphire), MICROEL ENG, 59(1-4), 2001, pp. 455-459
Authors:
Floyd, BA
Shi, L
Taur, Y
Lagnado, I
O, KK
Citation: Ba. Floyd et al., SOI and bulk CMOS frequency dividers operating above 15 GHz, ELECTR LETT, 37(10), 2001, pp. 617-618
Authors:
Munteanu, D
Cristoloveanu, S
Rozeau, O
Jomaah, J
Boussey, J
Wetzel, M
de la Houssaye, P
Lagnado, I
Citation: D. Munteanu et al., Characterization of silicon-on-sapphire material and devices for radio frequency applications, J ELCHEM SO, 148(4), 2001, pp. G218-G224
Authors:
Wetzel, M
Shi, LT
Jenkins, KA
de la Houssaye, PR
Taur, Y
Asbeck, PM
Lagnado, I
Citation: M. Wetzel et al., A 26.5 GHz silicon MOSFET 2 : 1 dynamic frequency divider, IEEE MICR G, 10(10), 2000, pp. 421-423
Authors:
Mathew, SJ
Niu, GF
Dubbelday, WB
Cressler, JD
Ott, JA
Chu, JO
Mooney, PM
Kavanagh, KL
Meyerson, BS
Lagnado, I
Citation: Sj. Mathew et al., Hole confinement and low-frequency noise in SiGe pFET's on silicon-on-sapphire, IEEE ELEC D, 20(4), 1999, pp. 173-175
Authors:
Ho, YC
Kim, KH
Floyd, BA
Wann, C
Taur, Y
Lagnado, I
O, KK
Citation: Yc. Ho et al., 4- and 13-GHz tuned amplifiers implemented in a 0.1-mu m CMOS technology on SOI, SOS, and bulk substrates, IEEE J SOLI, 33(12), 1998, pp. 2066-2073
Risultati:
1-7
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