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Results: 1-10 |
Results: 10
Interfacial layer formation in Gd2O3 films deposited directly on Si(001)
Authors: Gupta, JA Landheer, D Sproule, GI McCaffrey, JP Graham, MJ Yang, KC Lu, ZH Lennard, WN
Citation: Ja. Gupta et al., Interfacial layer formation in Gd2O3 films deposited directly on Si(001), APPL SURF S, 173(3-4), 2001, pp. 318-326
X-ray photoelectron spectroscopy of gate-quality silicon oxynitride films produced by annealing plasma-nitrided Si(100) in nitrous oxide
Authors: Chen, HW Landheer, D Chao, TS Hulse, JE Huang, TY
Citation: Hw. Chen et al., X-ray photoelectron spectroscopy of gate-quality silicon oxynitride films produced by annealing plasma-nitrided Si(100) in nitrous oxide, J ELCHEM SO, 148(7), 2001, pp. F140-F147
Characterization of Gd2O3 films deposited on Si(100) by electron-beam evaporation
Authors: Landheer, D Gupta, JA Sproule, GI McCaffrey, JP Graham, MJ Yang, KC Lu, ZH Lennard, WN
Citation: D. Landheer et al., Characterization of Gd2O3 films deposited on Si(100) by electron-beam evaporation, J ELCHEM SO, 148(2), 2001, pp. G29-G35
Thermal stability and diffusion in gadolinium silicate gate dielectric films
Authors: Landheer, D Wu, X Morais, J Baumvol, IJR Pezzi, RP Miotti, L Lennard, WN Kim, JK
Citation: D. Landheer et al., Thermal stability and diffusion in gadolinium silicate gate dielectric films, APPL PHYS L, 79(16), 2001, pp. 2618-2620
Gadolinium silicate gate dielectric films with sub-1.5 nm equivalent oxidethickness
Authors: Gupta, JA Landheer, D McCaffrey, JP Sproule, GI
Citation: Ja. Gupta et al., Gadolinium silicate gate dielectric films with sub-1.5 nm equivalent oxidethickness, APPL PHYS L, 78(12), 2001, pp. 1718-1720
Papers from the Ninth Canadian Semiconductor Technology Conference - 10-13August 1999 - The Chateau Laurier Hotel Ottawa, Canada - Preface
Authors: Janz, S Das, SR Landheer, D
Citation: S. Janz et al., Papers from the Ninth Canadian Semiconductor Technology Conference - 10-13August 1999 - The Chateau Laurier Hotel Ottawa, Canada - Preface, J VAC SCI A, 18(2), 2000, pp. 573-573
Electrical characterization of metal-oxide-semiconductor capacitors with anodic and plasma-nitrided oxides
Authors: Landsberger, LM Ghayour, R Sayedi, M Kahrizi, M Landheer, D Bardwell, JA Riopel, Y Jean, C Logiudice, V
Citation: Lm. Landsberger et al., Electrical characterization of metal-oxide-semiconductor capacitors with anodic and plasma-nitrided oxides, J VAC SCI A, 18(2), 2000, pp. 676-680
Characterization of GaAs(110) nitrided by an electron-cyclotron resonance plasma source using N-2
Authors: Landheer, D Rajesh, K Hulse, JE Sproule, GI McCaffrey, J Quance, T Graham, MJ
Citation: D. Landheer et al., Characterization of GaAs(110) nitrided by an electron-cyclotron resonance plasma source using N-2, J ELCHEM SO, 147(2), 2000, pp. 731-735
Low-frequency noise in cadmium-selenide thin-film transistors
Authors: Deen, MJ Rumyantsev, SL Landheer, D Xu, DX
Citation: Mj. Deen et al., Low-frequency noise in cadmium-selenide thin-film transistors, APPL PHYS L, 77(14), 2000, pp. 2234-2236
Bonding at the CdSe/SiOx (x = 0, 1, 2) interfaces
Authors: Masson, DP Landheer, D Quance, T Hulse, JE
Citation: Dp. Masson et al., Bonding at the CdSe/SiOx (x = 0, 1, 2) interfaces, J APPL PHYS, 84(9), 1998, pp. 4911-4920
Risultati: 1-10 |