AAAAAA

   
Results: 1-18 |
Results: 18
Photoluminescence and absorption spectroscopy of silicon-doped InGaN layers
Authors: Schenk, HPD Leroux, M de Mierry, P Laugt, M Omnes, F Gibart, P
Citation: Hpd. Schenk et al., Photoluminescence and absorption spectroscopy of silicon-doped InGaN layers, MAT SCI E B, 82(1-3), 2001, pp. 163-166
Wide-band-gap ZnMgBeSe alloys grown onto GaAs by molecular beam epitaxy
Authors: Tournie, E Vigue, F Laugt, M Faurie, JP
Citation: E. Tournie et al., Wide-band-gap ZnMgBeSe alloys grown onto GaAs by molecular beam epitaxy, J CRYST GR, 223(4), 2001, pp. 461-465
Growth modes and microstructures of ZnO layers deposited by plasma-assisted molecular-beam epitaxy on (0001) sapphire
Authors: Vigue, F Vennegues, P Deparis, C Vezian, S Laugt, M Faurie, JP
Citation: F. Vigue et al., Growth modes and microstructures of ZnO layers deposited by plasma-assisted molecular-beam epitaxy on (0001) sapphire, J APPL PHYS, 90(10), 2001, pp. 5115-5119
Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy
Authors: Feltin, E Beaumont, B Laugt, M de Mierry, P Vennegues, P Lahreche, H Leroux, M Gibart, P
Citation: E. Feltin et al., Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy, APPL PHYS L, 79(20), 2001, pp. 3230-3232
Defect characterization in ZnO layers grown by plasma-enhanced molecular-beam epitaxy on (0001) sapphire substrates
Authors: Vigue, F Vennegues, P Vezian, S Laugt, M Faurie, JP
Citation: F. Vigue et al., Defect characterization in ZnO layers grown by plasma-enhanced molecular-beam epitaxy on (0001) sapphire substrates, APPL PHYS L, 79(2), 2001, pp. 194-196
Evidence for multiple chemical ordering in AlGaN grown by metalorganic chemical vapor deposition
Authors: Ruterana, P Jores, GD Laugt, M Omnes, F Bellet-Amalric, E
Citation: P. Ruterana et al., Evidence for multiple chemical ordering in AlGaN grown by metalorganic chemical vapor deposition, APPL PHYS L, 78(3), 2001, pp. 344-346
Microstructural analysis of III-V nitrides grown on 6H-SiC by metal-organic vapour phase epitaxy (MOVPE)
Authors: Lahreche, H Vaille, M Vennegues, P Laugt, M Beaumont, B Gibart, P
Citation: H. Lahreche et al., Microstructural analysis of III-V nitrides grown on 6H-SiC by metal-organic vapour phase epitaxy (MOVPE), DIAM RELAT, 9(3-6), 2000, pp. 452-455
Optimisation of AlN and GaN growth by metalorganic vapour-phase epitaxy (MOVPE) on Si(111)
Authors: Lahreche, H Vennegues, P Tottereau, O Laugt, M Lorenzini, P Leroux, M Beaumont, B Gibart, P
Citation: H. Lahreche et al., Optimisation of AlN and GaN growth by metalorganic vapour-phase epitaxy (MOVPE) on Si(111), J CRYST GR, 217(1-2), 2000, pp. 13-25
Buffer free direct growth of GaN on 6H-SiC by metalorganic vapor phase epitaxy
Authors: Lahreche, H Leroux, M Laugt, M Vaille, M Beaumont, B Gibart, P
Citation: H. Lahreche et al., Buffer free direct growth of GaN on 6H-SiC by metalorganic vapor phase epitaxy, J APPL PHYS, 87(1), 2000, pp. 577-583
Molecular beam epitaxy of GaN under N-rich conditions using NH3
Authors: Grandjean, N Leroux, M Massies, J Mesrine, M Laugt, M
Citation: N. Grandjean et al., Molecular beam epitaxy of GaN under N-rich conditions using NH3, JPN J A P 1, 38(2A), 1999, pp. 618-621
Comparative study of GaN layers grown on insulating AlN and conductive AlGaN buffer layers
Authors: Lahreche, H Vennegues, P Vaille, M Beaumont, B Laugt, M Lorenzini, P Gibart, P
Citation: H. Lahreche et al., Comparative study of GaN layers grown on insulating AlN and conductive AlGaN buffer layers, SEMIC SCI T, 14(11), 1999, pp. L33-L36
Metal organic vapour phase epitaxy (MOVPE) growth of GaN(n)/SiC(p) heterostructures
Authors: Lahreche, H Vaille, M Beaumont, B Laugt, M Vennegues, P Gibart, P
Citation: H. Lahreche et al., Metal organic vapour phase epitaxy (MOVPE) growth of GaN(n)/SiC(p) heterostructures, PHYS ST S-A, 176(1), 1999, pp. 109-112
Effects of built-in polarization field on the optical properties of AlGaN/GaN quantum wells
Authors: Grandjean, N Damilano, B Dalmasso, S Leroux, M Laugt, M Massies, J
Citation: N. Grandjean et al., Effects of built-in polarization field on the optical properties of AlGaN/GaN quantum wells, PHYS ST S-A, 176(1), 1999, pp. 219-225
Optimizing scans on asymmetric reflections
Authors: Laugt, M Bousquet, V
Citation: M. Laugt et V. Bousquet, Optimizing scans on asymmetric reflections, J PHYS D, 32(10A), 1999, pp. A32-A36
Investigations by high-resolution X-ray diffraction (HRXRD) and transmission electron microscopy (TEM) of (BeTe/ZnSe) superlattices grown by molecular beam epitaxy onto GaAs buffer epilayer
Authors: Bousquet, V Laugt, M Vennegues, P Tournie, E Faurie, JP
Citation: V. Bousquet et al., Investigations by high-resolution X-ray diffraction (HRXRD) and transmission electron microscopy (TEM) of (BeTe/ZnSe) superlattices grown by molecular beam epitaxy onto GaAs buffer epilayer, J CRYST GR, 202, 1999, pp. 498-501
Built-in electric-field effects in wurtzite AlGaN/GaN quantum wells
Authors: Grandjean, N Damilano, B Dalmasso, S Leroux, M Laugt, M Massies, J
Citation: N. Grandjean et al., Built-in electric-field effects in wurtzite AlGaN/GaN quantum wells, J APPL PHYS, 86(7), 1999, pp. 3714-3720
Indium incorporation above 800 degrees C during metalorganic vapor phase epitaxy of InGaN
Authors: Schenk, HPD de Mierry, P Laugt, M Omnes, F Leroux, M Beaumont, B Gibart, P
Citation: Hpd. Schenk et al., Indium incorporation above 800 degrees C during metalorganic vapor phase epitaxy of InGaN, APPL PHYS L, 75(17), 1999, pp. 2587-2589
Quantum confined Stark effect due to built-in internal polarization fieldsin (Al,Ga)N/GaN quantum wells
Authors: Leroux, M Grandjean, N Laugt, M Massies, J Gil, B Lefebvre, P Bigenwald, P
Citation: M. Leroux et al., Quantum confined Stark effect due to built-in internal polarization fieldsin (Al,Ga)N/GaN quantum wells, PHYS REV B, 58(20), 1998, pp. R13371-R13374
Risultati: 1-18 |