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Results: 1-8 |
Results: 8
CH4/H-2 reactive ion etching induced damage of InP
Authors: Neitzert, HC Fang, R Kunst, M Layadi, N
Citation: Hc. Neitzert et al., CH4/H-2 reactive ion etching induced damage of InP, J VAC SCI B, 18(6), 2000, pp. 2803-2807
Use of orthogonal polynomial functions for endpoint detection during plasma etching of patterned wafers
Authors: Rietman, EA Layadi, N Downey, SW
Citation: Ea. Rietman et al., Use of orthogonal polynomial functions for endpoint detection during plasma etching of patterned wafers, J VAC SCI B, 18(5), 2000, pp. 2500-2504
Mapping of wafer profile to plasma processing conditions: Forward and reverse maps
Authors: Lane, J Rietman, EA Layadi, N Lee, JTC
Citation: J. Lane et al., Mapping of wafer profile to plasma processing conditions: Forward and reverse maps, J VAC SCI B, 18(1), 2000, pp. 299-302
A study on R-m -> R-1 maps: Application to a 0.16-mu m via etch process endpoint
Authors: Rietman, EA Layadi, N
Citation: Ea. Rietman et N. Layadi, A study on R-m -> R-1 maps: Application to a 0.16-mu m via etch process endpoint, IEEE SEMIC, 13(4), 2000, pp. 457-468
Diagnostic studies of aluminum etching in an inductively coupled plasma system: Determination of electron temperatures and connections to plasma-induced damage
Authors: Malyshev, MV Donnelly, VM Downey, SW Colonell, JI Layadi, N
Citation: Mv. Malyshev et al., Diagnostic studies of aluminum etching in an inductively coupled plasma system: Determination of electron temperatures and connections to plasma-induced damage, J VAC SCI A, 18(3), 2000, pp. 849-859
Marks for SCALPEL((R)) tool optics optimization
Authors: Farrow, RC Gallatin, GM Waskiewicz, WK Liddle, JA Kizilyalli, I Kornblit, A Biddick, C Blakey, M Klemens, F Felker, J Kraus, J Mkrtchyan, M Orphanos, PA Layadi, N Merchant, S
Citation: Rc. Farrow et al., Marks for SCALPEL((R)) tool optics optimization, MICROEL ENG, 53(1-4), 2000, pp. 309-312
An introduction to plasma etching for VLSI circuit technology
Authors: Layadi, N Colonell, JI Lee, JTC
Citation: N. Layadi et al., An introduction to plasma etching for VLSI circuit technology, BELL LABS T, 4(3), 1999, pp. 155-171
Interferometry for end point prediction during plasma etching of various structures in complementary metal-oxide-semiconductor device fabrication
Authors: Layadi, N Molloy, SJ Esry, TC Lill, T Trevor, J Grimbergen, MN Chinn, J
Citation: N. Layadi et al., Interferometry for end point prediction during plasma etching of various structures in complementary metal-oxide-semiconductor device fabrication, J VAC SCI B, 17(6), 1999, pp. 2630-2637
Risultati: 1-8 |