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Results:
1-7
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Results: 7
Authors:
Klinger, D
Lefeld-Sosnowska, M
Auleytner, J
Zymierska, D
Nowicki, L
Stonert, A
Kwiatkowski, S
Citation: D. Klinger et al., Extended defect structure induced by pulsed laser annealing in Ge implanted Si crystal, J ALLOY COM, 328(1-2), 2001, pp. 242-247
Authors:
Lefeld-Sosnowska, M
Grygoruk, Z
Wokulska, K
Blazewicz, J
Citation: M. Lefeld-sosnowska et al., Topography and lattice parameter of Si : Ge bulk crystals, J PHYS D, 34(10A), 2001, pp. A144-A147
Authors:
Lefeld-Sosnowska, M
Frymark, I
Citation: M. Lefeld-sosnowska et I. Frymark, Extended defects in GaN single crystals, J PHYS D, 34(10A), 2001, pp. A148-A150
Authors:
Zajac, M
Doradzinski, R
Gosk, J
Szczytko, J
Lefeld-Sosnowska, M
Kaminska, M
Twardowski, A
Palczewska, M
Grzanka, E
Gebicki, W
Citation: M. Zajac et al., Magnetic and optical properties of GaMnN magnetic semiconductor, APPL PHYS L, 78(9), 2001, pp. 1276-1278
Authors:
Kowalski, G
Lefeld-Sosnowska, M
Gronkowski, J
Borowski, J
Citation: G. Kowalski et al., X-ray topography studies of microdefects in silicon, PHI T ROY A, 357(1761), 1999, pp. 2707-2719
Authors:
Lefeld-Sosnowska, M
Citation: M. Lefeld-sosnowska, Dislocations generated in Si annealed under normal or high pressure, PHYS ST S-A, 171(1), 1999, pp. 105-110
Authors:
Klinger, D
Lefeld-Sosnowska, M
Zymierska, D
Auleytner, J
Kozankiewicz, B
Reginski, K
Citation: D. Klinger et al., Study of extended defect structure induced by pulsed laser annealing in implanted silicon crystals, PHYS ST S-A, 171(1), 1999, pp. 389-394
Risultati:
1-7
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