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Results: 1-11 |
Results: 11
Beam-generated plasmas for processing applications
Authors: Meger, RA Blackwell, DD Fernsler, RF Lampe, M Leonhardt, D Manheimer, WM Murphy, DP Walton, SG
Citation: Ra. Meger et al., Beam-generated plasmas for processing applications, PHYS PLASMA, 8(5), 2001, pp. 2558-2564
Ion energy distributions in a pulsed, electron beam-generated plasma
Authors: Walton, SG Leonhardt, D Blackwell, DD Fernsler, RF Murphy, DP Meger, RA
Citation: Sg. Walton et al., Ion energy distributions in a pulsed, electron beam-generated plasma, J VAC SCI A, 19(4), 2001, pp. 1325-1329
Probe diagnostic development for electron beam produced plasmas
Authors: Blackwell, DD Walton, SG Leonhardt, D Murphy, DP Fernsler, RF Amatucci, WE Meger, RA
Citation: Dd. Blackwell et al., Probe diagnostic development for electron beam produced plasmas, J VAC SCI A, 19(4), 2001, pp. 1330-1335
Plasma diagnostics in large area plasma processing system
Authors: Leonhardt, D Walton, SG Blackwell, DD Amatucci, WE Murphy, DP Fernsler, RF Meger, RA
Citation: D. Leonhardt et al., Plasma diagnostics in large area plasma processing system, J VAC SCI A, 19(4), 2001, pp. 1367-1373
Characterization of the CH4/H-2/Ar high density plasma etching process forZnSe
Authors: Eddy, CR Leonhardt, D Shamamian, VA Butler, JE
Citation: Cr. Eddy et al., Characterization of the CH4/H-2/Ar high density plasma etching process forZnSe, J ELEC MAT, 30(5), 2001, pp. 538-542
Contamination-free sounding rocket Langmuir probe
Authors: Amatucci, WE Schuck, PW Walker, DN Kintner, PM Powell, S Holback, B Leonhardt, D
Citation: We. Amatucci et al., Contamination-free sounding rocket Langmuir probe, REV SCI INS, 72(4), 2001, pp. 2052-2057
The mind of the CEO
Authors: Leonhardt, D
Citation: D. Leonhardt, The mind of the CEO, NY TIMES R, 2001, pp. 23-23
Characterization of high density CH4/H-2/Ar plasmas for compound semiconductor etching
Authors: Eddy, CR Leonhardt, D Douglass, SR Shamamian, VA Thoms, BD Butler, JE
Citation: Cr. Eddy et al., Characterization of high density CH4/H-2/Ar plasmas for compound semiconductor etching, J VAC SCI A, 17(3), 1999, pp. 780-792
Characterization of Cl-2/Ar high density plasmas for semiconductor etching
Authors: Eddy, CR Leonhardt, D Douglass, SR Thoms, BD Shamamian, VA Butler, JE
Citation: Cr. Eddy et al., Characterization of Cl-2/Ar high density plasmas for semiconductor etching, J VAC SCI A, 17(1), 1999, pp. 38-51
Characterization of the CH4/H-2/Ar high density plasma etching process forHgCdTe
Authors: Eddy, CR Leonhardt, D Shamamian, VA Meyer, JR Hoffman, CA Butler, JE
Citation: Cr. Eddy et al., Characterization of the CH4/H-2/Ar high density plasma etching process forHgCdTe, J ELEC MAT, 28(4), 1999, pp. 347-354
Growth of organic thin films by the matrix assisted pulsed laser evaporation (MAPLE) technique
Authors: Pique, A McGill, RA Chrisey, DB Leonhardt, D Mslna, TE Spargo, BJ Callahan, JH Vachet, RW Chung, R Bucaro, MA
Citation: A. Pique et al., Growth of organic thin films by the matrix assisted pulsed laser evaporation (MAPLE) technique, THIN SOL FI, 356, 1999, pp. 536-541
Risultati: 1-11 |