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Results: 1-7 |
Results: 7
Reference plate manufacturing process for the ion projection lithography pattern lock system
Authors: Letzkus, F Butschke, J Irmscher, M Reuter, C Springer, R Eder, S Loschner, H Eberhardt, R Mohaupt, M Ehrmann, A Mathuni, J Panzer, B Struck, T
Citation: F. Letzkus et al., Reference plate manufacturing process for the ion projection lithography pattern lock system, MICROEL ENG, 57-8, 2001, pp. 213-218
Dry etch improvements in the SOI Wafer Flow Process for IPL stencil mask fabrication
Authors: Letzkus, F Butschke, J Hofflinger, B Irmscher, M Reuter, C Springer, R Ehrmann, A Mathuni, J
Citation: F. Letzkus et al., Dry etch improvements in the SOI Wafer Flow Process for IPL stencil mask fabrication, MICROEL ENG, 53(1-4), 2000, pp. 609-612
Comparison of silicon stencil mask distortion measurements with finite element analysis
Authors: Ehrmann, A Struck, T Chalupka, A Haugeneder, E Loschner, H Butschke, J Irmscher, M Letzkus, F Springer, R Degen, A Rangelow, IW Shi, F Sossna, E Volland, B Engelstad, R Lovell, E Tejeda, R
Citation: A. Ehrmann et al., Comparison of silicon stencil mask distortion measurements with finite element analysis, J VAC SCI B, 17(6), 1999, pp. 3107-3111
Comparative evaluation of electron-beam sensitive single layer top surfaceimaging and bilayer chemical amplification of resist lines process for stencil mask making
Authors: Elian, K Irmscher, M Butschke, J Letzkus, F Reuter, C Springer, R
Citation: K. Elian et al., Comparative evaluation of electron-beam sensitive single layer top surfaceimaging and bilayer chemical amplification of resist lines process for stencil mask making, J VAC SCI B, 17(6), 1999, pp. 3122-3126
Directly sputtered stress-compensated carbon protective layer for silicon stencil masks
Authors: Hudek, P Hrkut, P Drzik, M Kostic, I Belov, M Torres, J Wasson, J Wolfe, JC Degen, A Rangelow, IW Voigt, J Butschke, J Letzkus, F Springer, R Ehrmann, A Kaesmaier, R Kragler, K Mathuni, J Haugeneder, E Loschner, H
Citation: P. Hudek et al., Directly sputtered stress-compensated carbon protective layer for silicon stencil masks, J VAC SCI B, 17(6), 1999, pp. 3127-3131
SOI wafer flow process for stencil mask fabrication
Authors: Butschke, J Ehrmann, A Hofflinger, B Irmscher, M Kasmaier, R Letzkus, F Loschner, H Mathuni, J Reuter, C Schomburg, C Springer, R
Citation: J. Butschke et al., SOI wafer flow process for stencil mask fabrication, MICROEL ENG, 46(1-4), 1999, pp. 473-476
p-n junction-based wafer flow process for stencil mask fabrication
Authors: Rangelow, IW Shi, F Volland, B Sossna, E Petrashenko, A Hudek, P Sunyk, R Butschke, J Letzkus, F Springer, R Ehrmann, A Gross, G Kaesmaier, R Oelmann, A Struck, T Unger, G Chalupka, A Haugeneder, E Lammer, G Loschner, H Tejeda, R Lovell, E Engelstad, R
Citation: Iw. Rangelow et al., p-n junction-based wafer flow process for stencil mask fabrication, J VAC SCI B, 16(6), 1998, pp. 3592-3598
Risultati: 1-7 |