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Results: 1-25 | 26-50 | 51-68
Results: 1-25/68
Photoenhanced electrochemical etching of n-GaN forced by negative bias
Authors: Seo, JW Oh, CS Yang, JW Yoon, CJ Lim, KY Lee, HJ
Citation: Jw. Seo et al., Photoenhanced electrochemical etching of n-GaN forced by negative bias, JPN J A P 2, 40(10B), 2001, pp. L1086-L1088
Measuring the machine intelligence quotient (MIQ) of human-machine cooperative systems
Authors: Park, HJ Kim, BK Lim, KY
Citation: Hj. Park et al., Measuring the machine intelligence quotient (MIQ) of human-machine cooperative systems, IEEE SYST A, 31(2), 2001, pp. 89-96
Loss and recovery of Arabidopsis-type telomere repeat sequences 5 '-(TTTAGGG)(n)-3 ' in the evolution of a major radiation of flowering plants
Authors: Adams, SP Hartman, TPV Lim, KY Chase, MW Bennett, MD Leitch, IJ Leitch, AR
Citation: Sp. Adams et al., Loss and recovery of Arabidopsis-type telomere repeat sequences 5 '-(TTTAGGG)(n)-3 ' in the evolution of a major radiation of flowering plants, P ROY SOC B, 268(1476), 2001, pp. 1541-1546
Thermal annealing effects on the photoluminescence of InGaN/GaN quantum wells
Authors: Lee, WH Kim, KS Yang, GM Hong, CH Lim, KY Suh, EK Lee, HJ Cho, HK Lee, JY
Citation: Wh. Lee et al., Thermal annealing effects on the photoluminescence of InGaN/GaN quantum wells, J KOR PHYS, 39(1), 2001, pp. 136-140
Nano-scale island (dot)-induced optical emission in InGaN quantum wells
Authors: Kim, KS Lee, WH Kim, CS Yang, GM Hong, CH Suh, EK Lim, KY Lee, HJ Cho, HK Lee, JY Yang, M Lee, YH Seo, JM
Citation: Ks. Kim et al., Nano-scale island (dot)-induced optical emission in InGaN quantum wells, J KOR PHYS, 39(1), 2001, pp. 141-146
Effect of growth conditions on GaN grown by lateral epitaxial overgrowth
Authors: Song, YH Kim, JH Jang, HJ Joon, SR Yang, JW Lim, KY Yang, GM
Citation: Yh. Song et al., Effect of growth conditions on GaN grown by lateral epitaxial overgrowth, J KOR PHYS, 38(3), 2001, pp. 242-244
Threshold voltage definition and extraction for deep-submicron MOSFETs
Authors: Zhou, X Lim, KY Qian, W
Citation: X. Zhou et al., Threshold voltage definition and extraction for deep-submicron MOSFETs, SOL ST ELEC, 45(3), 2001, pp. 507-510
A physically-based semi-empirical effective mobility model for MOSFET compact I-V modeling
Authors: Lim, KY Zhou, X
Citation: Ky. Lim et X. Zhou, A physically-based semi-empirical effective mobility model for MOSFET compact I-V modeling, SOL ST ELEC, 45(1), 2001, pp. 193-197
Characterization of GaN thin film growth on 3C-SiC/Si(111) substrate usingvarious buffer layers
Authors: Park, CI Kang, JH Kim, KC Suh, EK Lim, KY Nahm, KS
Citation: Ci. Park et al., Characterization of GaN thin film growth on 3C-SiC/Si(111) substrate usingvarious buffer layers, J CRYST GR, 224(3-4), 2001, pp. 190-194
Growth chemistry and interface characterization of single crystal SiC on modified Si surface
Authors: Nahm, KS Kim, KC Park, CI Lim, KY Yang, YS Seo, YH
Citation: Ks. Nahm et al., Growth chemistry and interface characterization of single crystal SiC on modified Si surface, J CHEM EN J, 34(5), 2001, pp. 692-699
Characteristics of n(+) polycrystalline-Si/Al2O3/Si metal-oxide-semiconductor structures prepared by atomic layer chemical vapor deposition using Al(CH3)(3) and H2O vapor
Authors: Park, DG Cho, HJ Lim, KY Lim, C Yeo, IS Roh, JS Park, JW
Citation: Dg. Park et al., Characteristics of n(+) polycrystalline-Si/Al2O3/Si metal-oxide-semiconductor structures prepared by atomic layer chemical vapor deposition using Al(CH3)(3) and H2O vapor, J APPL PHYS, 89(11), 2001, pp. 6275-6280
Unified MOSFET compact I-V model formulation through physics-based effective transformation
Authors: Zhou, X Lim, KY
Citation: X. Zhou et Ky. Lim, Unified MOSFET compact I-V model formulation through physics-based effective transformation, IEEE DEVICE, 48(5), 2001, pp. 887-896
Effects of TiN deposition on the characteristics of W/TiN/SiO2/Si metal oxide semiconductor capacitors
Authors: Park, DG Cho, HJ Lim, KY Cha, TH Yeo, IS Park, JW
Citation: Dg. Park et al., Effects of TiN deposition on the characteristics of W/TiN/SiO2/Si metal oxide semiconductor capacitors, J ELCHEM SO, 148(9), 2001, pp. F189-F193
Mechanistic study and characterization of 3C-SiC(100) grown on Si(100)
Authors: Kim, KC Park, CI Roh, JI Nahm, KS Hahn, YB Lee, YS Lim, KY
Citation: Kc. Kim et al., Mechanistic study and characterization of 3C-SiC(100) grown on Si(100), J ELCHEM SO, 148(5), 2001, pp. C383-C389
Growth and characterization of SiC/SiNx/Si structures
Authors: Nahm, KS Kim, KC Lim, KY
Citation: Ks. Nahm et al., Growth and characterization of SiC/SiNx/Si structures, J ELCHEM SO, 148(3), 2001, pp. G132-G136
Changes in the N- and C-terminal sequences of the murine R7 Gag-tMos protein affect brain lesion induction
Authors: Yuen, PH Devroe, E Lim, KY Wong, PKY
Citation: Ph. Yuen et al., Changes in the N- and C-terminal sequences of the murine R7 Gag-tMos protein affect brain lesion induction, J NEUROVIRO, 6(4), 2000, pp. 329-340
Studies on the pathology, especially brain hemorrhage and angioendotheliomas, induced by two new mos-containing viruses
Authors: Lim, KY Ryan, EA Wong, PKY Yuen, PH
Citation: Ky. Lim et al., Studies on the pathology, especially brain hemorrhage and angioendotheliomas, induced by two new mos-containing viruses, J NEUROVIRO, 6(2), 2000, pp. 106-120
Co-doping characteristics of Si and Zn with Mg in P-type GaN
Authors: Kim, KS Oh, CS Han, MS Kim, CS Yang, GM Yang, JW Hong, CH Youn, CJ Lim, KY Lee, HJ
Citation: Ks. Kim et al., Co-doping characteristics of Si and Zn with Mg in P-type GaN, MRS I J N S, 5, 2000, pp. NIL_276-NIL_281
Fabrication and characterization of InGaN nano-scale dots for blue and green LED applications
Authors: Kim, KS Hong, CH Lee, WH Kim, CS Cha, OH Yang, GM Suh, EK Lim, KY Lee, HJ Cho, HK Lee, JY Seo, JM
Citation: Ks. Kim et al., Fabrication and characterization of InGaN nano-scale dots for blue and green LED applications, MRS I J N S, 5, 2000, pp. NIL_757-NIL_761
Comparative analysis of DNA methylation in tobacco heterochromatic sequences
Authors: Kovarik, A Koukalova, B Lim, KY Matyasek, R Lichtenstein, CP Leitch, AR Bezdek, M
Citation: A. Kovarik et al., Comparative analysis of DNA methylation in tobacco heterochromatic sequences, CHROMOS RES, 8(6), 2000, pp. 527-541
Grain boundary diffusion of Cu in TiN film by X-ray photoelectron spectroscopy
Authors: Lim, KY Lee, YS Chung, YD Lyo, IW Whang, CN Won, JY Kang, HJ
Citation: Ky. Lim et al., Grain boundary diffusion of Cu in TiN film by X-ray photoelectron spectroscopy, APPL PHYS A, 70(4), 2000, pp. 431-434
X-ray absorption spectroscopy of Ag-Cr and Pd-Cr alloys formed by ion-beam-mixing
Authors: Lee, YS Lim, KY Chung, YD Whang, CN Jeon, Y
Citation: Ys. Lee et al., X-ray absorption spectroscopy of Ag-Cr and Pd-Cr alloys formed by ion-beam-mixing, APPL PHYS A, 70(1), 2000, pp. 59-63
Cl-2-based dry etching of GaN films under inductively coupled plasma conditions
Authors: Im, YH Park, JS Hahn, YB Nahm, KS Lee, YS Cho, BC Lim, KY Lee, HJ Pearton, SJ
Citation: Yh. Im et al., Cl-2-based dry etching of GaN films under inductively coupled plasma conditions, J VAC SCI A, 18(5), 2000, pp. 2169-2174
cDNA cloning and characterization of human cardiac junctin
Authors: Lim, KY Hong, CS Kim, DH
Citation: Ky. Lim et al., cDNA cloning and characterization of human cardiac junctin, GENE, 255(1), 2000, pp. 35-42
Effect of a buffer layer on GaN growth on a Si(111) substrate with a 3C-SiC intermediate layer
Authors: Park, CI Kang, JH Kim, KC Suh, EK Lim, KY Nahm, KS
Citation: Ci. Park et al., Effect of a buffer layer on GaN growth on a Si(111) substrate with a 3C-SiC intermediate layer, J KOR PHYS, 37(6), 2000, pp. 1007-1011
Risultati: 1-25 | 26-50 | 51-68