AAAAAA

   
Results: 1-22 |
Results: 22
Reliability of thin gate oxides irradiated under X-ray lithography conditions
Authors: Cho, BJ Kim, SJ Ang, CH Ling, CH Joo, MS Yeo, IS
Citation: Bj. Cho et al., Reliability of thin gate oxides irradiated under X-ray lithography conditions, JPN J A P 1, 40(4B), 2001, pp. 2819-2822
Generation-recombination noise in the near fully depleted SIMOX N-MOSFET operating in the linear region
Authors: Ang, DS Lun, Z Ling, CH
Citation: Ds. Ang et al., Generation-recombination noise in the near fully depleted SIMOX N-MOSFET operating in the linear region, IEEE ELEC D, 22(11), 2001, pp. 545-547
Gate-channel capacitance characteristics in the fully-depleted SOI MOSFET
Authors: Cheng, ZY Ling, CH
Citation: Zy. Cheng et Ch. Ling, Gate-channel capacitance characteristics in the fully-depleted SOI MOSFET, IEEE DEVICE, 48(2), 2001, pp. 388-391
Reduction of radiation-induced leakage currents in thin oxides by application of a low post-irradiation gate bias
Authors: Ang, CH Ling, CH Cheng, ZY Kim, SJ Cho, BJ
Citation: Ch. Ang et al., Reduction of radiation-induced leakage currents in thin oxides by application of a low post-irradiation gate bias, JPN J A P 2, 39(7B), 2000, pp. L757-L759
A novel subthreshold slope technique for the extraction of the buried-oxide interface trap density in fully depleted SOI MOSFET
Authors: Lun, Z Ang, DS Ling, CH
Citation: Z. Lun et al., A novel subthreshold slope technique for the extraction of the buried-oxide interface trap density in fully depleted SOI MOSFET, IEEE ELEC D, 21(8), 2000, pp. 411-413
A comparative study of radiation- and stress-induced leakage currents in thin gate oxides
Authors: Ang, CH Ling, CH Cheng, ZY Kim, SJ Cho, BJ
Citation: Ch. Ang et al., A comparative study of radiation- and stress-induced leakage currents in thin gate oxides, SEMIC SCI T, 15(10), 2000, pp. 961-964
A comparison between leakage currents in thin gate oxides subjected to X-ray radiation and electrical stress degradation
Authors: Cho, BJ Kim, SJ Ling, CH Joo, MS Yeo, IS
Citation: Bj. Cho et al., A comparison between leakage currents in thin gate oxides subjected to X-ray radiation and electrical stress degradation, SOL ST ELEC, 44(7), 2000, pp. 1289-1292
Radiation and electrical stress-induced hole trap-assisted tunneling currents in ultrathin gate oxides
Authors: Ang, CH Ling, CH Cho, BJ Kim, SJ Cheng, ZY
Citation: Ch. Ang et al., Radiation and electrical stress-induced hole trap-assisted tunneling currents in ultrathin gate oxides, SOL ST ELEC, 44(11), 2000, pp. 2001-2007
Does short wavelength lithography process degrade the integrity of thin gate oxide?
Authors: Kim, SJ Cho, BJ Chong, PF Chor, EF Ang, CH Ling, CH Joo, MS Yeo, IS
Citation: Sj. Kim et al., Does short wavelength lithography process degrade the integrity of thin gate oxide?, MICROEL REL, 40(8-10), 2000, pp. 1609-1613
Origin of temperature-sensitive hole current at low gate voltage regime inultrathin gate oxide
Authors: Ang, CH Ling, CH Cheng, ZY Cho, BJ
Citation: Ch. Ang et al., Origin of temperature-sensitive hole current at low gate voltage regime inultrathin gate oxide, J APPL PHYS, 88(5), 2000, pp. 2872-2876
Reduction of stress-induced leakage currents in thin oxides by applicationof a low post-stress gate bias
Authors: Ang, CH Ling, CH Cheng, ZY Cho, BJ Kim, SJ
Citation: Ch. Ang et al., Reduction of stress-induced leakage currents in thin oxides by applicationof a low post-stress gate bias, J APPL PHYS, 88(5), 2000, pp. 3087-3089
Bias and thermal annealings of radiation-induced leakage currents in thin-gate oxides
Authors: Ang, CH Ling, CH Cheng, ZY Kim, SJ Cho, BJ
Citation: Ch. Ang et al., Bias and thermal annealings of radiation-induced leakage currents in thin-gate oxides, IEEE NUCL S, 47(6), 2000, pp. 2758-2764
Characterization of leakage current in thin gate oxide subjected to 10 KeVX-ray irradiation
Authors: Ling, CH Ang, CH Ang, DS
Citation: Ch. Ling et al., Characterization of leakage current in thin gate oxide subjected to 10 KeVX-ray irradiation, IEEE DEVICE, 47(3), 2000, pp. 650-652
A steady state drain current technique for generation and recombination lifetime measurement in the SOI MOSFET
Authors: Cheng, ZY Ling, CH
Citation: Zy. Cheng et Ch. Ling, A steady state drain current technique for generation and recombination lifetime measurement in the SOI MOSFET, IEEE DEVICE, 47(1), 2000, pp. 97-102
Annealing of Fowler-Nordheim stress-induced leakage currents in thin silicon dioxide films
Authors: Ang, CH Ling, CH Cheng, ZY Kim, SJ Cho, BJ
Citation: Ch. Ang et al., Annealing of Fowler-Nordheim stress-induced leakage currents in thin silicon dioxide films, J ELCHEM SO, 147(12), 2000, pp. 4676-4682
Estimates of bottom roughness length and bottom shear stress in South San Francisco Bay, California
Authors: Cheng, RT Ling, CH Gartner, JW Wang, PF
Citation: Rt. Cheng et al., Estimates of bottom roughness length and bottom shear stress in South San Francisco Bay, California, J GEO RES-O, 104(C4), 1999, pp. 7715-7728
A new model for the post-stress interface trap generation in hot-carrier stressed P-MOSFET's
Authors: Ang, DS Ling, CH
Citation: Ds. Ang et Ch. Ling, A new model for the post-stress interface trap generation in hot-carrier stressed P-MOSFET's, IEEE ELEC D, 20(3), 1999, pp. 135-137
Effects of nutrient composition on butterhead lettuce (Lactuca sativa L-cv. Panama) grown in deep flow technique in the tropics
Authors: Keat, CK Meng-Wei, L Ling, CH
Citation: Ck. Keat et al., Effects of nutrient composition on butterhead lettuce (Lactuca sativa L-cv. Panama) grown in deep flow technique in the tropics, ACTA HORT, (504), 1999, pp. 135-144
On the time-dependent degradation of LDD n-MOSFETs under hot-carrier stress
Authors: Ang, DS Ling, CH
Citation: Ds. Ang et Ch. Ling, On the time-dependent degradation of LDD n-MOSFETs under hot-carrier stress, MICROEL REL, 39(9), 1999, pp. 1311-1322
The role of electron traps on the post-stress interface trap generation inhot-carrier stressed p-MOSFET's
Authors: Ang, DS Ling, CH
Citation: Ds. Ang et Ch. Ling, The role of electron traps on the post-stress interface trap generation inhot-carrier stressed p-MOSFET's, IEEE DEVICE, 46(4), 1999, pp. 738-746
A modified lucky electron model for impact ionization rate in NMOSFET's at77 K
Authors: Ling, CH See, LK
Citation: Ch. Ling et Lk. See, A modified lucky electron model for impact ionization rate in NMOSFET's at77 K, IEEE DEVICE, 46(1), 1999, pp. 263-266
Teaching semiconductor device physics with two-dimensional numerical solver
Authors: Yeow, YT Ling, CH
Citation: Yt. Yeow et Ch. Ling, Teaching semiconductor device physics with two-dimensional numerical solver, IEEE EDUCAT, 42(1), 1999, pp. 50-58
Risultati: 1-22 |