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Results: 1-12 |
Results: 12
Epitaxial film growth and characterization
Authors: Ferguson, IT Thompson, AG Barnett, SA Long, FH Feng, ZC
Citation: It. Ferguson et al., Epitaxial film growth and characterization, THIN FILM, 28, 2001, pp. 1-69
Extracting semantic video objects
Authors: Long, FH Feng, DG Peng, HC Siu, WC
Citation: Fh. Long et al., Extracting semantic video objects, IEEE COMP G, 21(1), 2001, pp. 48-55
Document image template matching based on component block list
Authors: Peng, HC Long, FH Chi, Z Siu, WC
Citation: Hc. Peng et al., Document image template matching based on component block list, PATT REC L, 22(9), 2001, pp. 1033-1042
Time-resolved spectroscopy of InGaN
Authors: Pophristic, M Long, FH Tran, C Ferguson, IT
Citation: M. Pophristic et al., Time-resolved spectroscopy of InGaN, MRS I J N S, 5, 2000, pp. NIL_691-NIL_696
Optical properties of a liquid-crystalline random copolyester
Authors: Lukacs, SJ Cohen, SM Long, FH
Citation: Sj. Lukacs et al., Optical properties of a liquid-crystalline random copolyester, J PHYS CH B, 103(32), 1999, pp. 6648-6652
Time-resolved laser spectroscopy of nitride semiconductors
Authors: Long, FH Pophristic, M Tran, C Kalicek, RF Feng, ZC Ferguson, I
Citation: Fh. Long et al., Time-resolved laser spectroscopy of nitride semiconductors, MAT SCI E B, 59(1-3), 1999, pp. 147-149
Raman microscopy of lateral epitaxial overgrowth of GaN on sapphire
Authors: Pophristic, M Long, FH Schurman, M Ramer, J Ferguson, IT
Citation: M. Pophristic et al., Raman microscopy of lateral epitaxial overgrowth of GaN on sapphire, PHYS ST S-B, 216(1), 1999, pp. 803-806
First- and second-order Raman scattering from semi-insulating 4H-SiC
Authors: Burton, JC Sun, L Long, FH Feng, ZC Ferguson, IT
Citation: Jc. Burton et al., First- and second-order Raman scattering from semi-insulating 4H-SiC, PHYS REV B, 59(11), 1999, pp. 7282-7284
Resonance enhancement of electronic Raman scattering from nitrogen defect levels in silicon carbide
Authors: Burton, JC Long, FH Ferguson, IT
Citation: Jc. Burton et al., Resonance enhancement of electronic Raman scattering from nitrogen defect levels in silicon carbide, J APPL PHYS, 86(4), 1999, pp. 2073-2077
Time-resolved photoluminescence measurements of quantum dots in InGaN multiple quantum wells and light-emitting diodes
Authors: Pophristic, M Long, FH Tran, C Ferguson, IT Karlicek, RF
Citation: M. Pophristic et al., Time-resolved photoluminescence measurements of quantum dots in InGaN multiple quantum wells and light-emitting diodes, J APPL PHYS, 86(2), 1999, pp. 1114-1118
Raman microscopy of lateral epitaxial overgrowth of GaN on sapphire
Authors: Pophristic, M Long, FH Schurman, M Ramer, J Ferguson, IT
Citation: M. Pophristic et al., Raman microscopy of lateral epitaxial overgrowth of GaN on sapphire, APPL PHYS L, 74(23), 1999, pp. 3519-3521
Time-resolved photoluminescence measurements of InGaN light-emitting diodes
Authors: Pophristic, M Long, FH Tran, C Ferguson, IT Karlicek, RF
Citation: M. Pophristic et al., Time-resolved photoluminescence measurements of InGaN light-emitting diodes, APPL PHYS L, 73(24), 1998, pp. 3550-3552
Risultati: 1-12 |