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Results: 1-25/63
Authors:
Look, DC
Hoelscher, JE
Brown, JL
Via, GD
Citation: Dc. Look et al., Electrical profiles in GaN/Al2O3 layers with conductive interface regions, MRS I J N S, 6(10), 2001, pp. 1-6
Authors:
Ferkol, TW
Look, DC
Citation: Tw. Ferkol et Dc. Look, Chinks in the armor of the airway - Pseudomonas infection in the cystic fibrosis lung, AM J RESP C, 25(1), 2001, pp. 11-13
Authors:
Auret, FD
Goodman, SA
Hayes, M
Legodi, MJ
van Laarhoven, HA
Look, DC
Citation: Fd. Auret et al., The influence of high energy proton bombardment on the electrical and defect properties of single-crystal ZnO, J PHYS-COND, 13(40), 2001, pp. 8989-8999
Authors:
Look, DC
Citation: Dc. Look, Recent advances in ZnO materials and devices, MAT SCI E B, 80(1-3), 2001, pp. 383-387
Authors:
Kang, HS
Look, DC
Citation: Hs. Kang et Dc. Look, Thermally asymmetric triangular fin analysis, J THERMOPHY, 15(4), 2001, pp. 427-430
Authors:
Look, DC
Citation: Dc. Look, Defect-related donors, acceptors, and traps in GaN, PHYS ST S-B, 228(1), 2001, pp. 293-302
Authors:
Hsu, JWP
Lang, DV
Richter, S
Kleiman, RN
Sergent, AM
Look, DC
Molnar, RJ
Citation: Jwp. Hsu et al., Impurity band in the interfacial region of GaN films grown by hydride vapor phase epitaxy, J ELEC MAT, 30(3), 2001, pp. 115-122
Authors:
Lee, CD
Ramachandran, V
Sagar, A
Feenstra, RM
Greve, DW
Sarney, WL
Salamanca-Riba, L
Look, DC
Bai, S
Choyke, WJ
Devaty, RP
Citation: Cd. Lee et al., Properties of GaN epitaxial layers grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy, J ELEC MAT, 30(3), 2001, pp. 162-169
Authors:
Look, DC
Krishnan, A
Citation: Dc. Look et A. Krishnan, One-dimensional fin-tip boundary condition correction II, HEAT TR ENG, 22(5), 2001, pp. 35-40
Authors:
Look, DC
Stutz, CE
Molnar, RJ
Saarinen, K
Liliental-Weber, Z
Citation: Dc. Look et al., Dislocation-independent mobility in lattice-mismatched epitaxy: application to GaN, SOL ST COMM, 117(10), 2001, pp. 571-575
Authors:
Reynolds, DC
Look, DC
Jogai, B
Citation: Dc. Reynolds et al., Fine structure on the green band in ZnO, J APPL PHYS, 89(11), 2001, pp. 6189-6191
Authors:
Reynolds, DC
Look, DC
Jogai, B
Molnar, RJ
Citation: Dc. Reynolds et al., Evidence for shallow acceptors in GaN, J APPL PHYS, 89(11), 2001, pp. 6272-6274
Authors:
Look, DC
Sizelove, JR
Citation: Dc. Look et Jr. Sizelove, Predicted maximum mobility in bulk GaN, APPL PHYS L, 79(8), 2001, pp. 1133-1135
Authors:
Reynolds, DC
Look, DC
Jogai, B
Collins, TC
Citation: Dc. Reynolds et al., Polariton and free-exciton-like photoluminescence in ZnO, APPL PHYS L, 79(23), 2001, pp. 3794-3796
Authors:
Auret, FD
Goodman, SA
Hayes, M
Legodi, MJ
van Laarhoven, HA
Look, DC
Citation: Fd. Auret et al., Electrical characterization of 1.8 MeV proton-bombarded ZnO, APPL PHYS L, 79(19), 2001, pp. 3074-3076
Authors:
Look, DC
Fang, ZQ
Citation: Dc. Look et Zq. Fang, Characterization of near-surface traps in semiconductors: GaN, APPL PHYS L, 79(1), 2001, pp. 84-86
Authors:
Fang, ZQ
Look, DC
Jasinski, J
Benamara, M
Liliental-Weber, Z
Molnar, RJ
Citation: Zq. Fang et al., Evolution of deep centers in GaN grown by hydride vapor phase epitaxy, APPL PHYS L, 78(3), 2001, pp. 332-334
Authors:
Goss, SH
Sun, XL
Young, AP
Brillson, LJ
Look, DC
Molnar, RJ
Citation: Sh. Goss et al., Microcathodoluminescence of impurity doping at gallium nitride/sapphire interfaces, APPL PHYS L, 78(23), 2001, pp. 3630-3632
Authors:
Fang, ZQ
Look, DC
Visconti, P
Wang, DF
Lu, CZ
Yun, F
Morkoc, H
Park, SS
Lee, KY
Citation: Zq. Fang et al., Deep centers in a free-standing GaN layer, APPL PHYS L, 78(15), 2001, pp. 2178-2180
Authors:
Saxler, A
Look, DC
Elhamri, S
Sizelove, J
Mitchel, WC
Sung, CM
Park, SS
Lee, KY
Citation: A. Saxler et al., High mobility in n-type GaN substrates, APPL PHYS L, 78(13), 2001, pp. 1873-1875
Authors:
Look, DC
Walter, MJ
Williamson, MR
Pang, LY
You, YJ
Sreshta, JN
Johnson, JE
Zander, DS
Brody, SL
Citation: Dc. Look et al., Effects of paramyxoviral infection on airway epithelial cell Foxj1 expression, ciliogenesis, and mucociliary function, AM J PATH, 159(6), 2001, pp. 2055-2069
Authors:
Look, DC
Fang, ZQ
Polenta, L
Citation: Dc. Look et al., Electrical measurements in GaN: Point defects and dislocations, MRS I J N S, 5, 2000, pp. NIL_454-NIL_464
Authors:
Fang, ZQ
Look, DC
Kim, W
Morkoc, H
Citation: Zq. Fang et al., Characteristics of deep centers observed in n-GaN grown by reactive molecular beam epitaxy, MRS I J N S, 5, 2000, pp. NIL_810-NIL_815
Authors:
Fang, ZQ
Look, DC
Lu, C
Morkoc, H
Citation: Zq. Fang et al., Electron and hole traps in GaN p-i-n photodetectors grown by reactive molecular beam epitaxy, J ELEC MAT, 29(9), 2000, pp. L19-L23
Changes in electrical characteristics associated with degradation of InGaNblue light-emitting diodes
Authors:
Fang, ZQ
Reynolds, DC
Look, DC
Citation: Zq. Fang et al., Changes in electrical characteristics associated with degradation of InGaNblue light-emitting diodes, J ELEC MAT, 29(4), 2000, pp. 448-451