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Results:
1-5
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Results: 5
Two silicon nitride technologies for post-SiO2 MOSFET gate dielectric
Authors:
Lu, Q Yeo, YC Yang, KJ Lin, R Polishchuk, I King, TJ Hu, CM Song, SC Luan, HF Kwong, DL Guo, X Luo, ZJ Wang, XW Ma, TP
Citation:
Q. Lu et al., Two silicon nitride technologies for post-SiO2 MOSFET gate dielectric, IEEE ELEC D, 22(7), 2001, pp. 324-326
Dual-metal gate CMOS technology with ultrathin silicon nitride gate dielectric
Authors:
Yeo, YC Lu, Q Ranade, P Takeuchi, H Yang, KJ Polishchuk, I King, TJ Hu, C Song, SC Luan, HF Kwong, DL
Citation:
Yc. Yeo et al., Dual-metal gate CMOS technology with ultrathin silicon nitride gate dielectric, IEEE ELEC D, 22(5), 2001, pp. 227-229
Characterization of RuO2 electrodes on Zr silicate and ZrO2 dielectrics
Authors:
Zhong, HC Heuss, G Misra, V Luan, HF Lee, CH Kwong, DL
Citation:
Hc. Zhong et al., Characterization of RuO2 electrodes on Zr silicate and ZrO2 dielectrics, APPL PHYS L, 78(8), 2001, pp. 1134-1136
Two-dimensional 45 degrees surface-normal microcoupler array for guided-wave optical clock distribution
Authors:
Gan, JH Wu, LH Luan, HF Bihari, B Chen, RT
Citation:
Jh. Gan et al., Two-dimensional 45 degrees surface-normal microcoupler array for guided-wave optical clock distribution, IEEE PHOTON, 11(11), 1999, pp. 1452-1454
Ultra thin high-quality stack nitride/oxide gate dielectrics prepared by in-situ rapid thermal N2O oxidation of NH3-nitrided Si
Authors:
Song, SC Luan, HF Lee, CH Mao, AY Lee, SJ Gelpey, J Marcus, S Kwong, DL
Citation:
Sc. Song et al., Ultra thin high-quality stack nitride/oxide gate dielectrics prepared by in-situ rapid thermal N2O oxidation of NH3-nitrided Si, MICROEL ENG, 48(1-4), 1999, pp. 55-58
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