Authors:
Lundgren, P
Usai, S
Sansosti, E
Lanari, R
Tesauro, M
Fornaro, G
Berardino, P
Citation: P. Lundgren et al., Modeling surface deformation observed with synthetic aperture radar interferometry at Campi Flegrei caldera, J GEO R-SOL, 106(B9), 2001, pp. 19355-19366
Authors:
Harwell, TS
Moore, K
Madison, M
Powell-Taylor, D
Lundgren, P
Smilie, JG
Acton, KJ
Helgerson, SD
Gohdes, D
Citation: Ts. Harwell et al., Comparing self-reported measures of diabetes care with similar measures from a chart audit in a well-defined population, AM J MED QU, 16(1), 2001, pp. 3-8
Citation: Y. Fu et al., Current and capacitance characteristics of a metal-insulator-semiconductorstructure with an ultrathin oxide layer, SUPERLATT M, 30(2), 2001, pp. 53-60
Authors:
Yousif, MYA
Willander, M
Lundgren, P
Caymax, M
Citation: Mya. Yousif et al., Behaviour of poly-Si1-xGex-gated MOS capacitors under different electricalstress conditions in the direct tunnelling regime, SEMIC SCI T, 16(6), 2001, pp. 478-482
Citation: P. Lundgren et al., Distribution and properties of neutral ceramidase activity in rat intestinal tract, DIG DIS SCI, 46(4), 2001, pp. 765-772
Authors:
Berman-Frank, I
Lundgren, P
Chen, YB
Kupper, H
Kolber, Z
Bergman, B
Falkowski, P
Citation: I. Berman-frank et al., Segregation of nitrogen fixation and oxygenic photosynthesis in the marinecyanobacterium Trichodesmium, SCIENCE, 294(5546), 2001, pp. 1534-1537
Authors:
Delouis, B
Lundgren, P
Salichon, J
Giardini, D
Citation: B. Delouis et al., Joint inversion of InSAR and teleseismic data for the slip history of the 1999 Izmit (Turkey) earthquake, GEOPHYS R L, 27(20), 2000, pp. 3389-3392
Authors:
Yousif, MYA
Friesel, M
Willander, M
Lundgren, P
Caymax, M
Citation: Mya. Yousif et al., On the performance of in situ B-doped P+ poly-Si1-xGex gate material for nanometer scale MOS technology, SOL ST ELEC, 44(8), 2000, pp. 1425-1429
Citation: J. Berg et al., Can molecular resonant tunneling diodes be used for local refresh of DRAM memory cells?, SOL ST ELEC, 44(12), 2000, pp. 2247-2252
Citation: La. Ragnarsson et P. Lundgren, Electrical characterization of P-b centers in (100)Si-SiO2 structures: Theinfluence of surface potential on passivation during post metallization anneal, J APPL PHYS, 88(2), 2000, pp. 938-942
Authors:
Lundgren, P
Protti, M
Donnellan, A
Heflin, M
Hernandez, E
Jefferson, D
Citation: P. Lundgren et al., Seismic cycle and plate margin deformation in Costa Rica: GPS observationsfrom 1994 to 1997, J GEO R-SOL, 104(B12), 1999, pp. 28915-28926
Citation: La. Ragnarsson et P. Lundgren, Surface potential influence on defect passivation kinetics probed by chromium gated metal-oxide-silicon devices, MICROEL ENG, 48(1-4), 1999, pp. 219-222
Citation: P. Lundgren, Impact of the gate material on the interface state density of metal-oxide-silicon devices with an ultrathin oxide layer, J APPL PHYS, 85(4), 1999, pp. 2229-2232
Citation: La. Ragnarsson et al., Electrical characterization of interfacial reactions in ultrathin oxides during postmetalization anneal, J ELCHEM SO, 146(7), 1999, pp. 2637-2642