Authors:
KEEBLE DJ
KRISHNAN A
FRIESSNEGG T
NIELSEN B
MADHUKAR S
AGGARWAL S
RAMESH R
POINDEXTER EH
Citation: Dj. Keeble et al., VACANCY DEFECTS IN THIN-FILM LA0.5SR0.5COO3-DELTA OBSERVED BY POSITRON-ANNIHILATION, Applied physics letters, 73(4), 1998, pp. 508-510
Authors:
JENKINS IG
SONG TK
MADHUKAR S
PRAKASH AS
AGGARWAL S
RAMESH R
Citation: Ig. Jenkins et al., DYNAMICS OF POLARIZATION LOSS IN (PB, LA)(ZY, TI)O-3 THIN-FILM CAPACITORS, Applied physics letters, 72(25), 1998, pp. 3300-3302
Authors:
DHOTE AM
MADHUKAR S
YOUNG D
VENKATESAN T
RAMESH R
COTELL CM
BENEDETTO JM
Citation: Am. Dhote et al., LOW-TEMPERATURE GROWTH AND RELIABILITY OF FERROELECTRIC MEMORY CELL INTEGRATED ON SI WITH CONDUCTING BARRIER STACK, Journal of materials research, 12(6), 1997, pp. 1589-1594
Authors:
MADHUKAR S
AGGARWAL S
DHOTE AM
RAMESH R
KRISHNAN A
KEEBLE D
POINDEXTER E
Citation: S. Madhukar et al., EFFECT OF OXYGEN STOICHIOMETRY ON THE ELECTRICAL-PROPERTIES OF LA0.5SR0.5COO3 ELECTRODES, Journal of applied physics, 81(8), 1997, pp. 3543-3547
Authors:
DHOTE AM
MADHUKAR S
WEI W
VENKATESAN T
RAMESH R
COTELL CM
Citation: Am. Dhote et al., DIRECT INTEGRATION OF FERROELECTRIC LA-SR-CO-O PB-NB-ZR-TI-O/LA-SR-CO-O CAPACITORS ON SILICON WITH CONDUCTING BARRIER LAYERS/, Applied physics letters, 68(10), 1996, pp. 1350-1352