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Results: 1-6 |
Results: 6

Authors: KEEBLE DJ KRISHNAN A FRIESSNEGG T NIELSEN B MADHUKAR S AGGARWAL S RAMESH R POINDEXTER EH
Citation: Dj. Keeble et al., VACANCY DEFECTS IN THIN-FILM LA0.5SR0.5COO3-DELTA OBSERVED BY POSITRON-ANNIHILATION, Applied physics letters, 73(4), 1998, pp. 508-510

Authors: KEEBLE DJ NIELSEN B KRISHNAN A LYNN KG MADHUKAR S RAMESH R YOUNG CF
Citation: Dj. Keeble et al., VACANCY DEFECTS IN (PB, LA)(ZR, TI)O-3 CAPACITORS OBSERVED BY POSITRON-ANNIHILATION, Applied physics letters, 73(3), 1998, pp. 318-320

Authors: JENKINS IG SONG TK MADHUKAR S PRAKASH AS AGGARWAL S RAMESH R
Citation: Ig. Jenkins et al., DYNAMICS OF POLARIZATION LOSS IN (PB, LA)(ZY, TI)O-3 THIN-FILM CAPACITORS, Applied physics letters, 72(25), 1998, pp. 3300-3302

Authors: DHOTE AM MADHUKAR S YOUNG D VENKATESAN T RAMESH R COTELL CM BENEDETTO JM
Citation: Am. Dhote et al., LOW-TEMPERATURE GROWTH AND RELIABILITY OF FERROELECTRIC MEMORY CELL INTEGRATED ON SI WITH CONDUCTING BARRIER STACK, Journal of materials research, 12(6), 1997, pp. 1589-1594

Authors: MADHUKAR S AGGARWAL S DHOTE AM RAMESH R KRISHNAN A KEEBLE D POINDEXTER E
Citation: S. Madhukar et al., EFFECT OF OXYGEN STOICHIOMETRY ON THE ELECTRICAL-PROPERTIES OF LA0.5SR0.5COO3 ELECTRODES, Journal of applied physics, 81(8), 1997, pp. 3543-3547

Authors: DHOTE AM MADHUKAR S WEI W VENKATESAN T RAMESH R COTELL CM
Citation: Am. Dhote et al., DIRECT INTEGRATION OF FERROELECTRIC LA-SR-CO-O PB-NB-ZR-TI-O/LA-SR-CO-O CAPACITORS ON SILICON WITH CONDUCTING BARRIER LAYERS/, Applied physics letters, 68(10), 1996, pp. 1350-1352
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