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Results: 1-8 |
Results: 8
NONRADIATIVE CURRENT IN INGAAS ALGAAS LASER-DIODES AS A MEASURE OF FACET STABILITY/
Authors: BEISTER G MAEGE J ERBERT G TRANKLE G
Citation: G. Beister et al., NONRADIATIVE CURRENT IN INGAAS ALGAAS LASER-DIODES AS A MEASURE OF FACET STABILITY/, Solid-state electronics, 42(11), 1998, pp. 1939-1945
MONOMODE EMISSION AT 350 MW AND HIGH-RELIABILITY WITH INGAAS ALGAAS (LAMBDA=1020 NM) RIDGE-WAVE-GUIDE LASER-DIODES/
Authors: BEISTER G BUGGE F ERBERT G MAEGE J RESSEL P SEBASTIAN J THIES A WENZEL H
Citation: G. Beister et al., MONOMODE EMISSION AT 350 MW AND HIGH-RELIABILITY WITH INGAAS ALGAAS (LAMBDA=1020 NM) RIDGE-WAVE-GUIDE LASER-DIODES/, Electronics Letters, 34(8), 1998, pp. 778-779
STABLE OPERATION OF INGAAS INGAP/ALGAAS (LAMBDA=1020 NM) LASER-DIODES/
Authors: ERBERT G BEISTER G BUGGE F MAEGE J RESSEL P SEBASTIAN J VOGEL K WENZEL H WEYERS M
Citation: G. Erbert et al., STABLE OPERATION OF INGAAS INGAP/ALGAAS (LAMBDA=1020 NM) LASER-DIODES/, Electronics Letters, 33(9), 1997, pp. 778-779
STABILITY OF SULFUR-PASSIVATED FACETS OF INGAAS-ALGAAS LASER-DIODES
Authors: BEISTER G MAEGE J SEBASTIAN J ERBERT G WEIXELBAUM L WEYERS M WURFL J DAGA OP
Citation: G. Beister et al., STABILITY OF SULFUR-PASSIVATED FACETS OF INGAAS-ALGAAS LASER-DIODES, IEEE photonics technology letters, 8(9), 1996, pp. 1124-1126
SIMPLE METHOD FOR EXAMINING SULFUR PASSIVATION OF FACETS IN INGAAS-ALGAAS (LAMBDA=0.98 MU-M) LASER-DIODES
Authors: BEISTER G MAEGE J GUTSCHE D ERBERT G SEBASTIAN J VOGEL K WEYERS M WURFL J DAGA OP
Citation: G. Beister et al., SIMPLE METHOD FOR EXAMINING SULFUR PASSIVATION OF FACETS IN INGAAS-ALGAAS (LAMBDA=0.98 MU-M) LASER-DIODES, Applied physics letters, 68(18), 1996, pp. 2467-2468
POWER HYSTERESIS AND WAVE-GUIDE BISTABILI TY OF STRIPE QUANTUM-WELL INGAAS GAAS/GAALAS HETEROLASERS WITH A STRAINED ACTIVE LAYER/
Authors: ELISEEV PG BEISTER G DRAKIN AE AKIMOVA IV ERBERT G MAEGE J SEBASTIAN J
Citation: Pg. Eliseev et al., POWER HYSTERESIS AND WAVE-GUIDE BISTABILI TY OF STRIPE QUANTUM-WELL INGAAS GAAS/GAALAS HETEROLASERS WITH A STRAINED ACTIVE LAYER/, Kvantovaa elektronika, 22(4), 1995, pp. 309-320
THRESHOLD DROP OF THE DIFFERENTIAL RESIST ANCE OF STRIPE QUANTUM-WELLINGAAS GAALAS LASERS/
Authors: ELISEEV PG MAEGE J ERBERT G BEISTER G
Citation: Pg. Eliseev et al., THRESHOLD DROP OF THE DIFFERENTIAL RESIST ANCE OF STRIPE QUANTUM-WELLINGAAS GAALAS LASERS/, Kvantovaa elektronika, 22(2), 1995, pp. 108-110
POTENTIAL SOURCES OF DEGRADATION IN INGAAS GAAS LASER-DIODES/
Authors: RECHENBERG I BEISTER G BUGGE F ERBERT G GRAMLICH S KLEIN A MAEGE J PILATZEK M RICHTER U RUVIMOV SS TREPTOW H WEYERS M
Citation: I. Rechenberg et al., POTENTIAL SOURCES OF DEGRADATION IN INGAAS GAAS LASER-DIODES/, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 310-313
Risultati: 1-8 |