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Citation: Ks. Krisch et al., GATE CAPACITANCE ATTENUATION IN MOS DEVICES WITH THIN GATE DIELECTRICS, IEEE electron device letters, 17(11), 1996, pp. 521-524

Authors: KRISCH KS GREEN ML BAUMANN FH BRASEN D FELDMAN LC MANCHANDA L

Citation: Ks. Krisch et al., THICKNESS DEPENDENCE OF BORON PENETRATION THROUGH O-2-GROWN AND N2O-GROWN GATE OXIDES AND ITS IMPACT ON THRESHOLD VOLTAGE VARIATION, I.E.E.E. transactions on electron devices, 43(6), 1996, pp. 982-990

Authors: DAWSON JL KRISCH K EVANSLUTTERODT KW TANG MT MANCHANDA L GREEN ML BRASEN D HIGASHI GS BOONE T

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Authors: GREEN ML BRASEN D EVANSLUTTERODT KW FELDMAN LC KRISCH K LENNARD W TANG HT MANCHANDA L TANG MT

Citation: Ml. Green et al., RAPID THERMAL-OXIDATION OF SILICON IN N2O BETWEEN 800-DEGREES AND 1200-DEGREES-C - INCORPORATED NITROGEN AND INTERFACIAL ROUGHNESS, Applied physics letters, 65(7), 1994, pp. 848-850

Authors: TANG MT EVANSLUTTERODT KW GREEN ML BRASEN D KRISCH K MANCHANDA L HIGASHI GS BOONE T

Citation: Mt. Tang et al., GROWTH TEMPERATURE-DEPENDENCE OF THE SI(001) SIO2 INTERFACE WIDTH/, Applied physics letters, 64(6), 1994, pp. 748-750

Authors: MANCHANDA L WEBER GR KIM YO FELDMAN LC MORYIA N WEIR BE KISTLER RC GREEN ML BRASEN D

Citation: L. Manchanda et al., A NEW METHOD TO FABRICATE THIN OXYNITRIDE OXIDE GATE DIELECTRIC FOR DEEP-SUBMICRON DEVICES, Microelectronic engineering, 22(1-4), 1993, pp. 69-72