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Results:
1-18
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Results: 18
Authors:
ONISHI T
ADACHI H
KIDOGUCHI I
MANNOH M
TAKAMORI A
NARUKAWA Y
KAWAKAMI Y
FUJITA S
Citation: T. Onishi et al., DOPING LEVEL AND TYPE OF GAINP SATURABLE ABSORBING LAYERS FOR REALIZING PULSATING 650-NM-BAND ALGAINP LASER-DIODES, IEEE photonics technology letters, 10(10), 1998, pp. 1368-1370
Authors:
ADACHI H
KIDOGUCHI I
FUKUHISA T
TANAKA K
MANNOH M
TAKAMORI A
Citation: H. Adachi et al., REDUCTION OF ASPECT RATIO IN 650 NM-BAND SELF-SUSTAINED-PULSING LASERS WITH SATURABLE-ABSORBING LAYER, JPN J A P 1, 36(3B), 1997, pp. 1876-1879
Authors:
KIDOGUCHI I
ADACHI H
TANAKA K
FUKUHISA T
MANNOH M
TAKAMORI A
Citation: I. Kidoguchi et al., HIGH-POWER 650-NM-BAND ALGAINP VISIBLE LASER-DIODES FABRICATED BY REACTIVE ION-BEAM ETCHING USING CL-2 N-2 MIXTURE/, JPN J A P 1, 36(3B), 1997, pp. 1892-1895
Authors:
KIDOGUCHI I
ADACHI H
KAMIYAMA S
FUKUHISA T
MANNOH M
TAKAMORI A
Citation: I. Kidoguchi et al., LOW-NOISE 65O-NM-BAND ALGAINP VISIBLE LASER-DIODES WITH A HIGHLY DOPED SATURABLE ABSORBING LAYER, IEEE journal of quantum electronics, 33(5), 1997, pp. 831-837
Authors:
IMAFUJI O
YURI M
HASHIMOTO T
ISHIDA M
MANNOH M
KAWATA T
OGAWA H
YOSHIKAWA A
ITOH K
Citation: O. Imafuji et al., LOW OPERATING CURRENT AND HIGH-TEMPERATURE OPERATION OF 650NM ALGAINPVISIBLE LASER-DIODES WITH REAL REFRACTIVE-INDEX GUIDED SELF-ALIGNED STRUCTURE, Electronics Letters, 33(14), 1997, pp. 1223-1225
Authors:
ISHIBASHI A
TAKEISHI H
MANNOH M
YABUUCHI Y
BAN Y
Citation: A. Ishibashi et al., RESIDUAL IMPURITIES IN GAN AL2O3 GROWN BY METALORGANIC VAPOR-PHASE EPITAXY/, Journal of electronic materials, 25(5), 1996, pp. 799-803
Authors:
KIDOGUCHI I
ADACHI H
FUKUHISA T
MANNOH M
TAKAMORI A
Citation: I. Kidoguchi et al., STABLE OPERATION OF SELF-SUSTAINED PULSATION IN 650-NM-BAND ALGAINP VISIBLE LASERS WITH HIGHLY DOPED SATURABLE ABSORBING LAYER, Applied physics letters, 68(25), 1996, pp. 3543-3545
Authors:
KAMIYAMA S
UENOYAMA T
MANNOH M
OHNAKA K
Citation: S. Kamiyama et al., THEORETICAL-STUDIES OF GAINP-ALGAINP STRAINED-QUANTUM-WELL LASERS INCLUDING SPIN-ORBIT SPLIT-OFF BAND EFFECT, IEEE journal of quantum electronics, 31(8), 1995, pp. 1409-1417
Authors:
KAMIYAMA S
UENOYAMA T
MANNOH M
OHNAKA K
Citation: S. Kamiyama et al., STRAIN EFFECT ON 630 NM GAINP ALGAINP MULTIQUANTUM-WELL LASERS/, JPN J A P 1, 33(5A), 1994, pp. 2571-2578
Authors:
KIDOGUCHI I
KAMIYAMA S
ADACHI H
MANNOH M
BAN Y
OHNAKA K
Citation: I. Kidoguchi et al., HIGH-POWER SINGLE-MODE OPERATION OF ALGAINP VISIBLE LASER-DIODE WITH LATERAL LEAKY WAVE-GUIDE STRUCTURE, IEEE photonics technology letters, 6(6), 1994, pp. 684-686
Authors:
KAMIYAMA S
UENOYAMA T
MANNOH M
OHNAKA K
Citation: S. Kamiyama et al., EFFECT OF SPIN-ORBIT SPLIT-OFF BANDS ON GAINP ALGAINP STRAINED-QUANTUM-WELL LASERS/, IEEE photonics technology letters, 6(10), 1994, pp. 1173-1175
Authors:
KAMIYAMA S
UENOYAMA T
MANNOH M
OHNAKA K
Citation: S. Kamiyama et al., EFFECT OF SPIN-ORBIT SPLIT-OFF BANDS ON GAINP ALGAINP STRAINED-QUANTUM-WELL LASERS/, IEEE photonics technology letters, 6(10), 1994, pp. 1173-1175
Authors:
MANNOH M
ISHIBASHI A
OHNAKA K
Citation: M. Mannoh et al., COMPARISON OF ALTERNATE P-SOURCES TO PHOSPHINE IN THE METALORGANIC VAPOR-PHASE EPITAXY GROWTH OF P-ALGAINP, Journal of crystal growth, 145(1-4), 1994, pp. 158-163
Authors:
ISHIBASHI A
MANNOH M
OHNAKA K
Citation: A. Ishibashi et al., ANNEALING EFFECTS ON HYDROGEN PASSIVATION OF ZN ACCEPTERS IN ALGAINP WITH P-GAAS CAP LAYER GROWN BY METALORGANIC VAPOR-PHASE EPITAXY, Journal of crystal growth, 145(1-4), 1994, pp. 414-419
Authors:
KAMIYAMA S
UENOYAMA T
MANNOH M
BAN Y
OHNAKA K
Citation: S. Kamiyama et al., ANALYSIS OF GAINP ALGAINP COMPRESSIVE-STRAINED MULTIPLE-QUANTUM-WELL LASER/, IEEE journal of quantum electronics, 30(6), 1994, pp. 1363-1369
Authors:
ISHIBASHI A
MANNOH M
KIDOGUCHI I
BAN Y
OHNAKA K
Citation: A. Ishibashi et al., SUPPRESSION OF ZN DIFFUSION DUE TO HYDROGEN PASSIVATION IN P-ALGAINP, Applied physics letters, 65(10), 1994, pp. 1275-1277
Authors:
KAMIYAMA S
UENOYAMA T
MANNOH M
BAN Y
OHNAKA K
Citation: S. Kamiyama et al., THEORETICAL-ANALYSIS OF VALENCE SUBBAND STRUCTURES AND OPTICAL GAIN OF GAINP ALGAINP COMPRESSIVE STRAINED-QUANTUM WELLS/, IEEE photonics technology letters, 5(4), 1993, pp. 439-441
Authors:
KIDOGUCHI I
KAMIYAMA S
MANNOH M
BAN Y
OHNAKA K
Citation: I. Kidoguchi et al., EXTREMELY HIGH QUANTUM EFFICIENCY (86-PERCENT) OPERATION OF ALGAINP VISIBLE LASER-DIODE WITH LATERAL LEAKY WAVE-GUIDE STRUCTURE, Applied physics letters, 62(21), 1993, pp. 2602-2604
Risultati:
1-18
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