AAAAAA

   
Results: 1-10 |
Results: 10
IMAGING THE ELASTIC NANOSTRUCTURE OF GE ISLANDS BY ULTRASONIC FORCE MICROSCOPY
Authors: KOLOSOV OV CASTELL MR MARSH CD BRIGGS GAD KAMINS TI WILLIAMS RS
Citation: Ov. Kolosov et al., IMAGING THE ELASTIC NANOSTRUCTURE OF GE ISLANDS BY ULTRASONIC FORCE MICROSCOPY, Physical review letters, 81(5), 1998, pp. 1046-1049
SIMOX - PROCESSING, LAYER PARAMETERS DESIGN, AND DEFECTS CONTROL
Authors: LI YP MARSH CD NEJIM A CHATER RJ KILNER JA HEMMENT PLF
Citation: Yp. Li et al., SIMOX - PROCESSING, LAYER PARAMETERS DESIGN, AND DEFECTS CONTROL, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 99(1-4), 1995, pp. 479-483
THE PEOPLE CRUNCH
Authors: MARSH CD
Citation: Cd. Marsh, THE PEOPLE CRUNCH, Solid state technology, 38(9), 1995, pp. 163-164
ELECTRICAL CHARACTERIZATION OF THIN-FILM, THIN BURIED OXIDE SIMOX SOISUBSTRATES PRODUCED BY LOW-ENERGY, LOW-DOSE IMPLANTATION
Authors: WAINWRIGHT SP HALL S MARSH CD
Citation: Sp. Wainwright et al., ELECTRICAL CHARACTERIZATION OF THIN-FILM, THIN BURIED OXIDE SIMOX SOISUBSTRATES PRODUCED BY LOW-ENERGY, LOW-DOSE IMPLANTATION, Semiconductor science and technology, 9(7), 1994, pp. 1404-1413
OXYGEN ISOTOPIC EXCHANGE DURING THE ANNEALING OF LOW-ENERGY SIMOX LAYERS
Authors: LI YP KILNER JA CHATER RJ NEJIM A HEMMENT PLF MARSH CD BOOKER GR
Citation: Yp. Li et al., OXYGEN ISOTOPIC EXCHANGE DURING THE ANNEALING OF LOW-ENERGY SIMOX LAYERS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 85(1-4), 1994, pp. 236-242
CRYSTALLOGRAPHIC DEFECT STUDIES IN SIMOX MATERIAL THINNED BY SACRIFICIAL OXIDATION
Authors: GILES LF MARSH CD NEJIM A HEMMENT PLF BOOKER GR
Citation: Lf. Giles et al., CRYSTALLOGRAPHIC DEFECT STUDIES IN SIMOX MATERIAL THINNED BY SACRIFICIAL OXIDATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 84(2), 1994, pp. 242-247
AN INVESTIGATION OF THE ROLE OF THE TIME-AVERAGED ION-BEAM CURRENT-DENSITY UPON THE DEFECT DENSITIES IN THIN-FILM SIMOX
Authors: NEJIM A MARSH CD GILES LF HEMMENT PLF LI Y CHATER RJ KILNER JA BOOKER GR
Citation: A. Nejim et al., AN INVESTIGATION OF THE ROLE OF THE TIME-AVERAGED ION-BEAM CURRENT-DENSITY UPON THE DEFECT DENSITIES IN THIN-FILM SIMOX, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 84(2), 1994, pp. 248-253
DIRECT FORMATION OF DEVICE WORTHY THIN-FILM SIMOX STRUCTURES BY LOW-ENERGY OXYGEN IMPLANTATION
Authors: NEJIM A LI Y MARSH CD HEMMENT PLF CHATER RJ KILNER JA BOOKER GR
Citation: A. Nejim et al., DIRECT FORMATION OF DEVICE WORTHY THIN-FILM SIMOX STRUCTURES BY LOW-ENERGY OXYGEN IMPLANTATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 822-826
THE EFFECTS OF DOSE AND TARGET TEMPERATURE ON LOW-ENERGY SIMOX LAYERS
Authors: LI Y KILNER JA CHATER RJ HEMMENT PLF NEJIM A ROBINSON AK REESON KJ MARSH CD BOOKER GR
Citation: Y. Li et al., THE EFFECTS OF DOSE AND TARGET TEMPERATURE ON LOW-ENERGY SIMOX LAYERS, Journal of the Electrochemical Society, 140(6), 1993, pp. 1780-1786
OXYGEN ISOTOPIC EXCHANGE BETWEEN AN O-18-TEMPERATURE ANNEALING( SI LAYER AND A NATURAL SIO2 CAPPING LAYER DURING HIGH)
Authors: LI YP KILNER JA CHATER RJ NEJIM A HEMMENT PLF MARSH CD BOOKER GR
Citation: Yp. Li et al., OXYGEN ISOTOPIC EXCHANGE BETWEEN AN O-18-TEMPERATURE ANNEALING( SI LAYER AND A NATURAL SIO2 CAPPING LAYER DURING HIGH), Applied physics letters, 63(20), 1993, pp. 2812-2814
Risultati: 1-10 |