AAAAAA
Results:
1-23
|
Results: 23
Authors:
PINKNEY H
THOMPSON DA
ROBINSON BJ
MASCHER P
SIMPSON PJ
MYLER U
KANG JU
FRANKEL MY
Citation: H. Pinkney et al., CHARACTERIZATION OF ANNEALED HIGH-RESISTIVITY INP GROWN BY HE-PLASMA-ASSISTED EPITAXY, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(2), 1998, pp. 772-775
Authors:
FRIESSNEGG T
BOUDREAU M
MASCHER P
KNIGHTS A
SIMPSON PJ
PUFF W
Citation: T. Friessnegg et al., DEFECT STRUCTURE OF CARBON-RICH A-SIC-H FILMS AND THE INFLUENCE OF GAS AND HEAT-TREATMENTS, Journal of applied physics, 84(2), 1998, pp. 786-795
Authors:
BOUMERZOUG M
BOUDREAU M
MASCHER P
Citation: M. Boumerzoug et al., OPTICAL-EMISSION SPECTROSCOPY AS A REAL-TIME DIAGNOSTIC-TOOL FOR PLASMA-ASSISTED DEPOSITION OF TIN, Plasma chemistry and plasma processing, 17(2), 1997, pp. 181-192
Authors:
MAHONY J
MASCHER P
Citation: J. Mahony et P. Mascher, POSITRON-ANNIHILATION STUDY OF VACANCY DEFECTS IN INAS, Physical review. B, Condensed matter, 55(15), 1997, pp. 9637-9641
Authors:
MAHONY J
FRIESSNEGG T
TESSARO G
MASCHER P
PUFF W
Citation: J. Mahony et al., TRANSMISSION OF POSITRONS WITH A BETA(-DISTRIBUTION THROUGH THIN-FILMS() ENERGY), Applied physics A: Materials science & processing, 63(3), 1996, pp. 299-301
Authors:
SONG KC
MATIN MA
ROBINSON B
SIMMONS JG
THOMPSON DA
MASCHER P
Citation: Kc. Song et al., HIGH-PERFORMANCE INP INGAAS-BASED MSM PHOTODETECTOR OPERATING AT 1.3-1.5-MU-M/, Solid-state electronics, 39(9), 1996, pp. 1283-1287
Authors:
MAHONY J
MASCHER P
PUFF W
Citation: J. Mahony et al., ON THE CONTRIBUTION OF VACANCY COMPLEXES TO THE SATURATION OF THE CARRIER CONCENTRATION IN ZINC-DOPED INP, Journal of applied physics, 80(5), 1996, pp. 2712-2719
Authors:
FRIESSNEGG T
BOUDREAU M
BROWN J
MASCHER P
SIMPSON PJ
PUFF W
Citation: T. Friessnegg et al., EFFECT OF ANNEALING ON THE DEFECT STRUCTURE IN A-SIC-H FILMS, Journal of applied physics, 80(4), 1996, pp. 2216-2223
Authors:
PANG Z
MASCHER P
SIMMONS JG
THOMPSON DA
Citation: Z. Pang et al., SCHOTTKY CONTACTS TO GAXIN1-XP BARRIER ENHANCEMENT LAYERS ON INP AND INGAAS, Canadian journal of physics, 74, 1996, pp. 104-107
Authors:
ADAMS M
MASCHER P
KITAI AH
Citation: M. Adams et al., MICROSTRUCTURAL EVOLUTION OF ZNS DURING SINTERING MONITORED BY OPTICAL AND POSITRON-ANNIHILATION TECHNIQUES, Applied physics A: Materials science & processing, 61(2), 1995, pp. 217-220
Authors:
PUFF W
BOUMERZOUG M
BROWN J
MASCHER P
MACDONALD D
SIMPSON PJ
BALOGH AG
HAHN H
CHANG W
ROSE M
Citation: W. Puff et al., AN INVESTIGATION OF POINT-DEFECTS IN SILICON-CARBIDE, Applied physics A: Materials science & processing, 61(1), 1995, pp. 55-58
Authors:
BROWN J
MASCHER P
KITAI AH
Citation: J. Brown et al., POSITRON LIFETIME SPECTROSCOPY AND CATHODOLUMINESCENCE OF POLYCRYSTALLINE TERBIUM-DOPED YTTRIA, Journal of the Electrochemical Society, 142(3), 1995, pp. 958-960
Authors:
WANG J
THOMPSON DA
SIMMONS JG
BOUMERZOUG M
BOUDREAU M
MASCHER P
Citation: J. Wang et al., THE EFFECT OF THE NATIVE-OXIDE ON MUSK UNDERCUTTING OF V-GROOVES ETCHED INTO (100) INP SURFACES USING AN SINX MASK, Journal of the Electrochemical Society, 142(2), 1995, pp. 593-596
Authors:
BOUMERZOUG M
PANG ZD
BOUDREAU M
MASCHER P
SIMMONS JG
Citation: M. Boumerzoug et al., ROOM-TEMPERATURE ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION OF HIGH-QUALITY TIN, Applied physics letters, 66(3), 1995, pp. 302-304
Authors:
BOUMERZOUG M
MASCHER P
SIMMONS JG
Citation: M. Boumerzoug et al., LOW-TEMPERATURE ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION OF VERY-LOW RESISTIVITY TIN FOR INP METALLIZATION USING METALORGANICPRECURSORS, Applied physics letters, 66(20), 1995, pp. 2664-2666
Authors:
PANG Z
BOUMERZOUG M
KRUZELECKY RV
MASCHER P
SIMMONS JG
THOMPSON DA
Citation: Z. Pang et al., LOW-TEMPERATURE RADIO-FREQUENCY SPUTTER-DEPOSITION OF TIN THIN-FILMS USING OPTICAL-EMISSION SPECTROSCOPY AS PROCESS MONITOR, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(1), 1994, pp. 83-89
Authors:
HALEC A
SCHULTZ PJ
BOUDREAU M
BOUMERZOUG M
MASCHER P
MCCAFFREY JP
JACKMAN TE
Citation: A. Halec et al., VOID FORMATION AT SILICON-NITRIDE SILICON INTERFACES STUDIED BY VARIABLE-ENERGY POSITRONS, Surface and interface analysis, 21(12), 1994, pp. 839-845
Authors:
BOUMERZOUG M
KRUZELECKY RV
MASCHER P
THOMPSON DA
Citation: M. Boumerzoug et al., IN-SITU MONITORING OF ELECTRON-CYCLOTRON-RESONANCE PLASMA CHEMICAL-VAPOR-DEPOSITION OF HYDROGENATED SILICON-NITRIDE FILMS, Surface & coatings technology, 59(1-3), 1993, pp. 77-81
Authors:
DANNEFAER S
MASCHER P
KERR D
Citation: S. Dannefaer et al., ANNEALING STUDIES OF VACANCIES IN PROTON IRRADIATED SILICON, Journal of applied physics, 73(8), 1993, pp. 3740-3743
Authors:
ZHONG J
KITAI AH
MASCHER P
PUFF W
Citation: J. Zhong et al., THE INFLUENCE OF PROCESSING CONDITIONS ON POINT-DEFECTS AND LUMINESCENCE-CENTERS IN ZNO, Journal of the Electrochemical Society, 140(12), 1993, pp. 3644-3649
Authors:
BOUDREAU M
BOUMERZOUG M
MASCHER P
JESSOP PE
Citation: M. Boudreau et al., ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION OF SILICON OXYNITRIDES USING TRIS(DIMETHYLAMINO)SILANE, Applied physics letters, 63(22), 1993, pp. 3014-3016
Authors:
PANG ZD
BOUMERZOUG M
KRUZELECKY RV
MASCHER P
SIMMONS JG
THOMPSON DA
Citation: Zd. Pang et al., ELECTRICAL CHARACTERIZATION OF RF-SPUTTERED TIN THIN-FILMS ON III-V SEMICONDUCTORS, Canadian journal of physics, 70(10-11), 1992, pp. 1076-1081
Authors:
BOUDREAU M
BOUMERZOUG M
KRUZELECKY RV
MASCHER P
JESSOP PE
THOMPSON DA
Citation: M. Boudreau et al., OPTICAL AND ELECTRICAL-PROPERTIES OF ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITED SINXH FILMS, Canadian journal of physics, 70(10-11), 1992, pp. 1104-1108
Risultati:
1-23
|