Citation: Lw. Massengill, 1997 SPECIAL NSREC ISSUE OF THE IEEE-TRANSACTIONS-ON-NUCLEAR-SCIENCE - GUEST EDITORS COMMENTS, IEEE transactions on nuclear science, 44(6), 1997, pp. 1786-1786
Citation: K. Gulati et al., SINGLE EVENT MIRRORING AND DRAM SENSE AMPLIFIER DESIGNS FOR IMPROVED SINGLE-EVENT-UPSET PERFORMANCE, IEEE transactions on nuclear science, 41(6), 1994, pp. 2026-2034
Citation: Gr. Agrawal et al., A PROPOSED SEU TOLERANT DYNAMIC RANDOM-ACCESS MEMORY (DRAM) CELL, IEEE transactions on nuclear science, 41(6), 1994, pp. 2035-2042
Citation: S. Velacheri et al., SINGLE-EVENT-INDUCED CHARGE COLLECTION AND DIRECT CHANNEL CONDUCTION IN SUBMICRON MOSFETS, IEEE transactions on nuclear science, 41(6), 1994, pp. 2103-2111
Authors:
MILANOWSKI RJ
PAGEY MP
MATTA AI
BHUVA BL
MASSENGILL LW
KERNS SE
Citation: Rj. Milanowski et al., COMBINED EFFECT OF X-IRRADIATION AND FORMING GAS ANNEAL ON THE HOT-CARRIER RESPONSE OF MOS OXIDES, IEEE transactions on nuclear science, 40(6), 1993, pp. 1360-1366
Citation: Lw. Massengill et al., EFFECTS OF PROCESS PARAMETER DISTRIBUTIONS AND ION STRIKE LOCATIONS ON SEU CROSS-SECTION DATA, IEEE transactions on nuclear science, 40(6), 1993, pp. 1804-1811