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Results: 1-15 |
Results: 15
HETEROINTERFACE DIPOLES - APPLICATIONS TO (A) SI-SIO2, (B) NITRIDED SI-N-SIO2, AND (C) SIC-SIO2 INTERFACES
Authors: LUCOVSKY G YANG H MASSOUD HZ
Citation: G. Lucovsky et al., HETEROINTERFACE DIPOLES - APPLICATIONS TO (A) SI-SIO2, (B) NITRIDED SI-N-SIO2, AND (C) SIC-SIO2 INTERFACES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 2191-2198
ON-STATE RELIABILITY OF AMORPHOUS-SILICON ANTIFUSES
Authors: VASUDEVAN N FAIR RB MASSOUD HZ ZHAO T LOOK K KARPOVICH Y HART MJ
Citation: N. Vasudevan et al., ON-STATE RELIABILITY OF AMORPHOUS-SILICON ANTIFUSES, Journal of applied physics, 84(11), 1998, pp. 6440-6447
DEVICE PHYSICS AND SIMULATION OF METAL FERROELECTRIC-FILM P-TYPE SILICON CAPACITORS/
Authors: MASSOUD HZ
Citation: Hz. Massoud, DEVICE PHYSICS AND SIMULATION OF METAL FERROELECTRIC-FILM P-TYPE SILICON CAPACITORS/, Microelectronic engineering, 36(1-4), 1997, pp. 95-98
THE ROLE OF SUBSTRATE CARRIER GENERATION IN DETERMINING THE ELECTRIC-FIELD IN THE OXIDE OF MOS CAPACITORS BIASED IN THE FOWLER-NORHEIM TUNNELING REGIME
Authors: MASSOUD HZ SHIELY JP
Citation: Hz. Massoud et Jp. Shiely, THE ROLE OF SUBSTRATE CARRIER GENERATION IN DETERMINING THE ELECTRIC-FIELD IN THE OXIDE OF MOS CAPACITORS BIASED IN THE FOWLER-NORHEIM TUNNELING REGIME, Microelectronic engineering, 36(1-4), 1997, pp. 263-266
THERMAL-OXIDATION OF SILICON IN THE ULTRATHIN REGIME
Authors: MASSOUD HZ
Citation: Hz. Massoud, THERMAL-OXIDATION OF SILICON IN THE ULTRATHIN REGIME, Solid-state electronics, 41(7), 1997, pp. 929-934
SUBMICROMETER ELEVATED SOURCE AND DRAIN MOSFET TECHNOLOGY USING E-BEAM EVAPORATED SILICON
Authors: MIRABEDINI MR GOODWINJOHANSSON SH MASSOUD HZ
Citation: Mr. Mirabedini et al., SUBMICROMETER ELEVATED SOURCE AND DRAIN MOSFET TECHNOLOGY USING E-BEAM EVAPORATED SILICON, Electronics Letters, 33(13), 1997, pp. 1183-1184
DESIGN AND CONSTRUCTION OF A RAPID THERMAL-PROCESSING SYSTEM FOR IN-SITU OPTICAL MEASUREMENTS
Authors: CONRAD KA SAMPSON RK MASSOUD HZ IRENE EA
Citation: Ka. Conrad et al., DESIGN AND CONSTRUCTION OF A RAPID THERMAL-PROCESSING SYSTEM FOR IN-SITU OPTICAL MEASUREMENTS, Review of scientific instruments, 67(11), 1996, pp. 3954-3957
THE ONSET OF THE THERMAL-OXIDATION OF SILICON FROM ROOM-TEMPERATURE TO 1000-DEGREES-C
Authors: MASSOUD HZ
Citation: Hz. Massoud, THE ONSET OF THE THERMAL-OXIDATION OF SILICON FROM ROOM-TEMPERATURE TO 1000-DEGREES-C, Microelectronic engineering, 28(1-4), 1995, pp. 109-116
SUBQUARTER-MICROMETER ELEVATED SOURCE-AND-DRAIN MOSFET STRUCTURE USING POLYSILICON SPACERS
Authors: MIRABEDINI MR GOODWINJOHANSSON SH MASSOUD HZ FAIR RB
Citation: Mr. Mirabedini et al., SUBQUARTER-MICROMETER ELEVATED SOURCE-AND-DRAIN MOSFET STRUCTURE USING POLYSILICON SPACERS, Electronics Letters, 30(19), 1994, pp. 1631-1632
SUBSTRATE DOPING AND MICROROUGHNESS EFFECTS IN RTP TEMPERATURE-MEASUREMENT BY IN-SITU ELLIPSOMETRY
Authors: SAMPSON RK CONRAD KA MASSOUD HZ IRENE EA
Citation: Rk. Sampson et al., SUBSTRATE DOPING AND MICROROUGHNESS EFFECTS IN RTP TEMPERATURE-MEASUREMENT BY IN-SITU ELLIPSOMETRY, Journal of the Electrochemical Society, 141(3), 1994, pp. 737-741
WAVELENGTH CONSIDERATIONS FOR IMPROVED SILICON-WAFER TEMPERATURE-MEASUREMENT BY ELLIPSOMETRY
Authors: SAMPSON RK CONRAD KA MASSOUD HZ IRENE EA
Citation: Rk. Sampson et al., WAVELENGTH CONSIDERATIONS FOR IMPROVED SILICON-WAFER TEMPERATURE-MEASUREMENT BY ELLIPSOMETRY, Journal of the Electrochemical Society, 141(2), 1994, pp. 539-542
NEW PROPERTIES AND APPLICATIONS OF ELECTRON-BEAM EVAPORATED SILICON IN SUBMICRON ELEVATED SOURCE DRAIN METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS/
Authors: MIRABEDINI MR GOODWINJOHANSSON SH MASSOUD HZ
Citation: Mr. Mirabedini et al., NEW PROPERTIES AND APPLICATIONS OF ELECTRON-BEAM EVAPORATED SILICON IN SUBMICRON ELEVATED SOURCE DRAIN METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS/, Applied physics letters, 65(6), 1994, pp. 728-730
ELLIPSOMETRIC MONITORING AND CONTROL OF THE RAPID THERMAL-OXIDATION OF SILICON
Authors: CONRAD KA SAMPSON RK MASSOUD HZ IRENE EA
Citation: Ka. Conrad et al., ELLIPSOMETRIC MONITORING AND CONTROL OF THE RAPID THERMAL-OXIDATION OF SILICON, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2096-2101
RESOLUTION OF SILICON-WAFER TEMPERATURE-MEASUREMENT BY IN-SITU ELLIPSOMETRY IN A RAPID THERMAL PROCESSOR
Authors: SAMPSON RK MASSOUD HZ
Citation: Rk. Sampson et Hz. Massoud, RESOLUTION OF SILICON-WAFER TEMPERATURE-MEASUREMENT BY IN-SITU ELLIPSOMETRY IN A RAPID THERMAL PROCESSOR, Journal of the Electrochemical Society, 140(9), 1993, pp. 2673-2678
SIMULTANEOUS SILICON-WAFER TEMPERATURE AND OXIDE FILM THICKNESS MEASUREMENT IN RAPID-THERMAL PROCESSING USING ELLIPSOMETRY
Authors: SAMPSON RK CONRAD KA IRENE EA MASSOUD HZ
Citation: Rk. Sampson et al., SIMULTANEOUS SILICON-WAFER TEMPERATURE AND OXIDE FILM THICKNESS MEASUREMENT IN RAPID-THERMAL PROCESSING USING ELLIPSOMETRY, Journal of the Electrochemical Society, 140(6), 1993, pp. 1734-1743
Risultati: 1-15 |