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Results: 1-25 | 26-50 | 51-56
Results: 1-25/56
STABILIZING THE SURFACE-MORPHOLOGY OF SI1-X-YGEXCY SI HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY THROUGH THE USE OF A SILICON-CARBIDESOURCE/
Authors: CROKE ET VAJO JJ HUNTER AT AHN CC CHANDRASEKHAR D LAURSEN T SMITH DJ MAYER JW
Citation: Et. Croke et al., STABILIZING THE SURFACE-MORPHOLOGY OF SI1-X-YGEXCY SI HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY THROUGH THE USE OF A SILICON-CARBIDESOURCE/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 1937-1942
ELECTRONIC-PROPERTIES OF SI SI1-X-YGEXCY HETEROJUNCTIONS/
Authors: STEIN BL YU ET CROKE ET HUNTER AT LAURSEN T MAYER JW AHN CC
Citation: Bl. Stein et al., ELECTRONIC-PROPERTIES OF SI SI1-X-YGEXCY HETEROJUNCTIONS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1639-1643
PIXE ANALYSIS OF SALADO POLYCHROME CERAMICS OF THE AMERICAN SOUTHWEST
Authors: GOSSER DC OHNERSORGEN MA SIMON AW MAYER JW
Citation: Dc. Gosser et al., PIXE ANALYSIS OF SALADO POLYCHROME CERAMICS OF THE AMERICAN SOUTHWEST, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 138, 1998, pp. 880-887
CORROSION OF TITANIUM-NITRIDE ENCAPSULATED SILVER FILMS EXPOSED TO A H2S AMBIENT
Authors: ADAMS D JULIES BA MAYER JW ALFORD TL
Citation: D. Adams et al., CORROSION OF TITANIUM-NITRIDE ENCAPSULATED SILVER FILMS EXPOSED TO A H2S AMBIENT, Thin solid films, 332(1-2), 1998, pp. 235-239
DEEP-LEVEL TRANSIENT SPECTROSCOPY OF SI SI1-X-YGEXCY HETEROSTRUCTURES/
Authors: STEIN BL YU ET CROKE ET HUNTER AT LAURSEN T MAYER JW AHN CC
Citation: Bl. Stein et al., DEEP-LEVEL TRANSIENT SPECTROSCOPY OF SI SI1-X-YGEXCY HETEROSTRUCTURES/, Applied physics letters, 73(5), 1998, pp. 647-649
MEASUREMENT OF BAND OFFSETS IN SI SI1-XGEX AND SI/SI1-X-YGEXCY HETEROJUNCTIONS/
Authors: STEIN BL YU ET CROKE ET HUNTER AT LAURSEN T BAIR AE MAYER JW AHN CC
Citation: Bl. Stein et al., MEASUREMENT OF BAND OFFSETS IN SI SI1-XGEX AND SI/SI1-X-YGEXCY HETEROJUNCTIONS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 1108-1111
MATERIALS CHARACTERIZATION OF SI1-X-YGEXCY SI SUPERLATTICE STRUCTURES/
Authors: LAURSEN T CHANDRASEKHAR D SMITH DJ MAYER JW CROKE ET HUNTER AT
Citation: T. Laursen et al., MATERIALS CHARACTERIZATION OF SI1-X-YGEXCY SI SUPERLATTICE STRUCTURES/, Thin solid films, 308, 1997, pp. 358-362
TITANIUM-NITRIDE SELF-ENCAPSULATION OF CU AND AG FILMS ON SILICON DIOXIDE
Authors: ADAMS D LAURSEN T ALFORD TL MAYER JW
Citation: D. Adams et al., TITANIUM-NITRIDE SELF-ENCAPSULATION OF CU AND AG FILMS ON SILICON DIOXIDE, Thin solid films, 308, 1997, pp. 448-454
CONTROL OF COMPOSITION AND CRYSTALLINITY IN THE MOLECULAR-BEAM EPITAXY OF STRAIN-COMPENSATED SI1-X-YGEXCY ALLOYS ON SI
Authors: CROKE ET HUNTER AT AHN CC LAURSEN T CHANDRASEKHAR D BAIR AE SMITH DJ MAYER JW
Citation: Et. Croke et al., CONTROL OF COMPOSITION AND CRYSTALLINITY IN THE MOLECULAR-BEAM EPITAXY OF STRAIN-COMPENSATED SI1-X-YGEXCY ALLOYS ON SI, Journal of crystal growth, 175, 1997, pp. 486-492
SILICIDE FORMATION BY CONCENTRATION CONTROLLED PHASE SELECTION
Authors: PRETORIUS R MAYER JW
Citation: R. Pretorius et Jw. Mayer, SILICIDE FORMATION BY CONCENTRATION CONTROLLED PHASE SELECTION, Journal of applied physics, 81(5), 1997, pp. 2448-2450
ION-BEAMS IN SILICON PROCESSING AND CHARACTERIZATION
Authors: CHASON E PICRAUX ST POATE JM BORLAND JO CURRENT MI DELARUBIA TD EAGLESHAM DJ HOLLAND OW LAW ME MAGEE CW MAYER JW MELNGAILIS J TASCH AF
Citation: E. Chason et al., ION-BEAMS IN SILICON PROCESSING AND CHARACTERIZATION, Journal of applied physics, 81(10), 1997, pp. 6513-6561
CRYSTALLINE-TO-AMORPHOUS TRANSITION IN CHEMICAL-VAPOR-DEPOSITION OF PSEUDOMORPHIC SI1-X-YGEXCY FILMS
Authors: LAURSEN T CHANDRASEKHAR D SMITH DJ MAYER JW HUFFMAN J WESTHOFF R ROBINSON M
Citation: T. Laursen et al., CRYSTALLINE-TO-AMORPHOUS TRANSITION IN CHEMICAL-VAPOR-DEPOSITION OF PSEUDOMORPHIC SI1-X-YGEXCY FILMS, Applied physics letters, 71(12), 1997, pp. 1634-1636
BAND OFFSETS IN SI SI1-X-YGEXCY HETEROJUNCTIONS MEASURED BY ADMITTANCE SPECTROSCOPY/
Authors: STEIN BL YU ET CROKE ET HUNTER AT LAURSEN T BAIR AE MAYER JW AHN CC
Citation: Bl. Stein et al., BAND OFFSETS IN SI SI1-X-YGEXCY HETEROJUNCTIONS MEASURED BY ADMITTANCE SPECTROSCOPY/, Applied physics letters, 70(25), 1997, pp. 3413-3415
DOSE-RATE EFFECTS IN SILICON-IMPLANTED GALLIUM-ARSENIDE FROM LOW TO HIGH-DOSES
Authors: JASPER C MORTON R LAU SS HAYNES TE MAYER JW JONES KS
Citation: C. Jasper et al., DOSE-RATE EFFECTS IN SILICON-IMPLANTED GALLIUM-ARSENIDE FROM LOW TO HIGH-DOSES, Journal of electronic materials, 25(1), 1996, pp. 107-111
FORMATION OF PASSIVATION AND ADHESION LAYERS FOR CU VIA NITRIDATION OF CU-TI IN AN AMMONIA AMBIENT
Authors: ADAMS D ALFORD TL RAFALSKI SA RACK MJ RUSSELL SW KIM MJ MAYER JW
Citation: D. Adams et al., FORMATION OF PASSIVATION AND ADHESION LAYERS FOR CU VIA NITRIDATION OF CU-TI IN AN AMMONIA AMBIENT, Materials chemistry and physics, 43(2), 1996, pp. 145-152
COMPARISON OF ELASTIC RESONANCE AND ELASTIC RECOIL DETECTION IN THE QUANTIFICATION OF CARBON IN SIGEC
Authors: BAIR AE ATZMON Z RUSSELL SW BARBOUR JC ALFORD TL MAYER JW
Citation: Ae. Bair et al., COMPARISON OF ELASTIC RESONANCE AND ELASTIC RECOIL DETECTION IN THE QUANTIFICATION OF CARBON IN SIGEC, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 118(1-4), 1996, pp. 274-277
ION-BEAM MIXING IN ZNSE CDZNSE STRAINED-LAYER STRUCTURES/
Authors: MORTON R DENG F LAU SS XIN S FURDYNA JK HUTCHINS JW SKROMME BJ MAYER JW
Citation: R. Morton et al., ION-BEAM MIXING IN ZNSE CDZNSE STRAINED-LAYER STRUCTURES/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 118(1-4), 1996, pp. 704-708
IN-SITU MEV ION-BEAM ANALYSIS OF CERAMIC SURFACES MODIFIED BY 100-400KEV ION IRRADIATION
Authors: YU N LEVINE TE SICKAFUS KE NASTASI M MITCHELL JN MAGGIORE CJ EVANS CR HOLLANDER MG TESMER JR WEBER WJ MAYER JW
Citation: N. Yu et al., IN-SITU MEV ION-BEAM ANALYSIS OF CERAMIC SURFACES MODIFIED BY 100-400KEV ION IRRADIATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 118(1-4), 1996, pp. 766-771
THE APPLICATION OF ION-BEAM ANALYSIS TO CALCIUM PHOSPHATE-BASED BIOMATERIALS
Authors: RUSSELL SW ALFORD TL LUPTAK KA PIZZICONI VB MAYER JW
Citation: Sw. Russell et al., THE APPLICATION OF ION-BEAM ANALYSIS TO CALCIUM PHOSPHATE-BASED BIOMATERIALS, Journal of biomedical materials research, 30(2), 1996, pp. 165-174
CARBON INCORPORATION INTO SI AT HIGH-CONCENTRATIONS BY ION-IMPLANTATION AND SOLID-PHASE EPITAXY
Authors: STRANE JW LEE SR STEIN HJ PICRAUX ST WATANABE JK MAYER JW
Citation: Jw. Strane et al., CARBON INCORPORATION INTO SI AT HIGH-CONCENTRATIONS BY ION-IMPLANTATION AND SOLID-PHASE EPITAXY, Journal of applied physics, 79(2), 1996, pp. 637-646
BAND-GAP OF GE RICH SI1-X-YGEXCY ALLOYS
Authors: ORNER BA OLOWOLAFE J ROE K KOLODZEY J LAURSEN T MAYER JW SPEAR J
Citation: Ba. Orner et al., BAND-GAP OF GE RICH SI1-X-YGEXCY ALLOYS, Applied physics letters, 69(17), 1996, pp. 2557-2559
THE EFFECT OF CARBON ON STRAIN RELAXATION AND PHASE-FORMATION IN THE TI SI1-X-YGEXCY/SI CONTACT SYSTEM/
Authors: EYAL A BRENER R BESERMAN R EIZENBERG M ATZMON Z SMITH DJ MAYER JW
Citation: A. Eyal et al., THE EFFECT OF CARBON ON STRAIN RELAXATION AND PHASE-FORMATION IN THE TI SI1-X-YGEXCY/SI CONTACT SYSTEM/, Applied physics letters, 69(1), 1996, pp. 64-66
A NOVEL TECHNIQUE FOR CHARACTERIZING THE SURFACE COVERAGE OF THIN-FILM CHEMICAL-VAPOR-DEPOSITION IN ULTRA-HIGH-ASPECT-RATIO MICROSTRUCTURES
Authors: SOAVE RJ TASKER GW THEN AM MAYER JW SHACHAMDIAMAND Y
Citation: Rj. Soave et al., A NOVEL TECHNIQUE FOR CHARACTERIZING THE SURFACE COVERAGE OF THIN-FILM CHEMICAL-VAPOR-DEPOSITION IN ULTRA-HIGH-ASPECT-RATIO MICROSTRUCTURES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(3), 1995, pp. 1027-1031
LOW-POWER ELECTRONICS AND PULSED-LASER PROCESSING
Authors: MAYER JW SIGMON TW
Citation: Jw. Mayer et Tw. Sigmon, LOW-POWER ELECTRONICS AND PULSED-LASER PROCESSING, Materials chemistry and physics, 42(2), 1995, pp. 129-133
INVERSION OF DOSE-RATE EFFECTS IN ION-IMPLANTED GALLIUM-ARSENIDE IN THE LOW-DOSE REGIME
Authors: JASPER C MORTON R LAU SS HAYNES TE GARCIA R MAYER JW
Citation: C. Jasper et al., INVERSION OF DOSE-RATE EFFECTS IN ION-IMPLANTED GALLIUM-ARSENIDE IN THE LOW-DOSE REGIME, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 294-297
Risultati: 1-25 | 26-50 | 51-56