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Results: 25
Authors:
KAPUR P
BANG DS
MCVITTIE JP
SARASWAT KC
MOUNTSIER T
Citation: P. Kapur et al., METHOD FOR ANGULAR SPUTTER YIELD EXTRACTION FOR HIGH-DENSITY PLASMA CHEMICAL-VAPOR-DEPOSITION SIMULATORS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1123-1128
Authors:
SHIEH B
SARASWAT KC
MCVITTIE JP
LIST S
NAG S
ISLAMRAJA M
HAVEMANN RH
Citation: B. Shieh et al., AIR-GAP FORMATION DURING IMD DEPOSITION TO LOWER INTERCONNECT CAPACITANCE, IEEE electron device letters, 19(1), 1998, pp. 16-18
Authors:
MA SM
MCVITTIE JP
Citation: Sm. Ma et Jp. Mcvittie, PLASMA-INDUCED WAFER CHARGING SENSOR, Zhongguo gongcheng xuekan, 21(1), 1998, pp. 11-19
Authors:
FRIEDMANN JB
SHOHET JL
MAU R
HERSHKOWITZ N
BISGAARD S
MA SM
MCVITTIE JP
Citation: Jb. Friedmann et al., PLASMA-PARAMETER DEPENDENCE OF THIN-OXIDE DAMAGE FROM WAFER CHARGING DURING ELECTRON-CYCLOTRON-RESONANCE PLASMA PROCESSING, IEEE transactions on semiconductor manufacturing, 10(1), 1997, pp. 154-166
Authors:
MA SM
ABDELATI WLN
MCVITTIE JP
Citation: Sm. Ma et al., SENSITIVITY AND LIMITATIONS OF PLASMA CHARGING DAMAGE MEASUREMENTS USING MOS CAPACITORS STRUCTURES, IEEE electron device letters, 18(9), 1997, pp. 420-422
Authors:
MA SM
MCVITTIE JP
SARASWAT KC
Citation: Sm. Ma et al., PREDICTION OF PLASMA CHARGING INDUCED GATE OXIDE DAMAGE BY PLASMA CHARGING PROBE, IEEE electron device letters, 18(10), 1997, pp. 468-470
Authors:
BURKE A
BRAECKELMANN G
MANGER D
EISENBRAUN E
KALOYEROS AE
MCVITTIE JP
HAN J
BANG D
LOAN JF
SULLIVAN JJ
Citation: A. Burke et al., PROFILE SIMULATION OF CONFORMALITY OF CHEMICAL-VAPOR-DEPOSITED COPPERIN SUBQUARTER-MICRON TRENCH AND VIA STRUCTURES, Journal of applied physics, 82(9), 1997, pp. 4651-4660
Authors:
HSIAU ZK
KAN EC
MCVITTIE JP
DUTTON RW
Citation: Zk. Hsiau et al., ROBUST, STABLE, AND ACCURATE BOUNDARY MOVEMENT FOR PHYSICAL ETCHING AND DEPOSITION SIMULATION, I.E.E.E. transactions on electron devices, 44(9), 1997, pp. 1375-1385
Authors:
KINOSHITA T
HANE M
MCVITTIE JP
Citation: T. Kinoshita et al., NOTCHING AS AN EXAMPLE OF CHARGING IN UNIFORM HIGH-DENSITY PLASMAS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(1), 1996, pp. 560-565
Authors:
MA SM
MCVITTIE JP
Citation: Sm. Ma et Jp. Mcvittie, EFFECT OF WAFER TEMPERATURE DURING PLASMA EXPOSURE ON CHARGING DAMAGE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(1), 1996, pp. 566-570
Authors:
MCVITTIE JP
Citation: Jp. Mcvittie, PLASMA RESEARCHERS MEET, EXPLORE PROCESS DAMAGE, Solid state technology, 39(10), 1996, pp. 38
Authors:
LI JL
MCVITTIE JP
FERZIGER J
SARASWAT KC
DONG J
Citation: Jl. Li et al., OPTIMIZATION OF INTERMETAL DIELECTRIC DEPOSITION MODULE USING SIMULATION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(4), 1995, pp. 1867-1874
Authors:
HAN JS
MCVITTIE JP
ZHENG J
Citation: Js. Han et al., PROFILE MODELING OF HIGH-DENSITY PLASMA OXIDE ETCHING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(4), 1995, pp. 1893-1899
Authors:
MA SM
MCVITTIE JP
SARASWAT KC
Citation: Sm. Ma et al., EFFECTS OF WAFER TEMPERATURE ON PLASMA CHARGING INDUCED DAMAGE TO MOSGATE OXIDE, IEEE electron device letters, 16(12), 1995, pp. 534-536
Authors:
ZHENG J
BRINKMANN RP
MCVITTIE JP
Citation: J. Zheng et al., THE EFFECT OF THE PRESHEATH ON THE ION ANGULAR-DISTRIBUTION AT THE WAFER SURFACE, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(3), 1995, pp. 859-864
Authors:
GABRIEL CT
MCVITTIE JP
Citation: Ct. Gabriel et Jp. Mcvittie, EFFECT OF PLASMA OVERETCH OF POLYSILICON ON GATE OXIDE DAMAGE, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(3), 1995, pp. 900-904
Authors:
FRIEDMANN JB
SHOHET JL
MCVITTIE JP
MA SM
Citation: Jb. Friedmann et al., THIN-OXIDE CHARGING DAMAGE TO MICROELECTRONIC TEST STRUCTURES IN AN ELECTRON-CYCLOTRON-RESONANCE PLASMA, Applied physics letters, 67(25), 1995, pp. 3718-3720
Authors:
MURAKAWA S
MCVITTIE JP
Citation: S. Murakawa et Jp. Mcvittie, DIRECT MEASUREMENT OF SURFACE CHARGING DURING PLASMA-ETCHING, JPN J A P 1, 33(7B), 1994, pp. 4446-4449
Authors:
MURAKAWA S
MCVITTIE JP
Citation: S. Murakawa et Jp. Mcvittie, MECHANISM OF SURFACE CHARGING EFFECTS ON ETCHING PROFILE DEFECTS, JPN J A P 1, 33(4B), 1994, pp. 2184-2188
Authors:
SINGH VK
SHAQFEH ESG
MCVITTIE JP
Citation: Vk. Singh et al., STUDY OF SILICON ETCHING IN CF4 O-2 PLASMAS TO ESTABLISH SURFACE REEMISSION AS THE DOMINANT TRANSPORT MECHANISM, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(5), 1994, pp. 2952-2962
Authors:
FANG S
MCVITTIE JP
Citation: S. Fang et Jp. Mcvittie, OXIDE DAMAGE FROM PLASMA CHARGING - BREAKDOWN MECHANISM AND OXIDE QUALITY, I.E.E.E. transactions on electron devices, 41(6), 1994, pp. 1034-1039
Authors:
KING TJ
MCVITTIE JP
SARASWAT KC
PFIESTER JR
Citation: Tj. King et al., ELECTRICAL-PROPERTIES OF HEAVILY-DOPED POLYCRYSTALLINE SILICON-GERMANIUM FILMS, I.E.E.E. transactions on electron devices, 41(2), 1994, pp. 228-232
Authors:
FANG SC
MURAKAWA S
MCVITTIE JP
Citation: Sc. Fang et al., MODELING OF OXIDE BREAKDOWN FROM GATE CHARGING DURING RESIST ASHING, I.E.E.E. transactions on electron devices, 41(10), 1994, pp. 1848-1855
Authors:
MURAKAWA S
FANG S
MCVITTIE JP
Citation: S. Murakawa et al., ION TRAJECTORY DISTORTION AND PROFILE TILT BY SURFACE CHARGING IN PLASMA-ETCHING, Applied physics letters, 64(12), 1994, pp. 1558-1560
Authors:
CHANG CY
MCVITTIE JP
SARASWAT KC
LIN KK
Citation: Cy. Chang et al., BACKSCATTERED DEPOSITION IN AR SPUTTER ETCH OF SILICON DIOXIDE, Applied physics letters, 63(16), 1993, pp. 2294-2296
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