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Results:
1-12
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Results: 12
Authors:
LONGEAUD C
KLEIDER JP
CABARROCAS PRI
HAMMA S
MEAUDRE R
MEAUDRE M
Citation: C. Longeaud et al., PROPERTIES OF A NEW A-SI-H-LIKE MATERIAL - HYDROGENATED POLYMORPHOUS SILICON, Journal of non-crystalline solids, 230, 1998, pp. 96-99
Authors:
MEAUDRE M
MEAUDRE R
Citation: M. Meaudre et R. Meaudre, KINETICS OF DEFECT FORMATION BY ILLUMINATION AT TEMPERATURE HIGHER THAN 200-DEGREES-C IN HYDROGENATED AMORPHOUS-SILICON, Journal of non-crystalline solids, 230, 1998, pp. 301-305
Authors:
VIGNOLI S
MEAUDRE R
MEAUDRE M
Citation: S. Vignoli et al., METASTABLE DEFECT CREATION AND ANNEALING UNDER ILLUMINATION IN INTRINSIC HYDROGENATED AMORPHOUS-SILICON DEPOSITED FROM HELIUM SILANE MIXTURES, Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic, 73(2), 1996, pp. 261-276
Authors:
VIGNOLI S
MEAUDRE R
MEAUDRE M
CABARROCAS PR
GODET C
MORIN P
Citation: S. Vignoli et al., STABILITY VERSUS STRUCTURE IN GLOW-DISCHARGE HYDROGENATED AMORPHOUS-SILICON OBTAINED FROM A WIDE-RANGE OF DEPOSITION CONDITIONS, Journal of non-crystalline solids, 200, 1996, pp. 474-477
Authors:
PAILLARD V
MEAUDRE M
MELINON P
DUPUIS V
PEREZ JP
VIGNOLI S
PEREZ A
MEAUDRE R
Citation: V. Paillard et al., DC CONDUCTION IN DIAMOND-LIKE CARBON-FILMS OBTAINED BY LOW-ENERGY CLUSTER BEAM DEPOSITION, Journal of non-crystalline solids, 191(1-2), 1995, pp. 174-183
Authors:
MEAUDRE M
MEAUDRE R
VIGNOLI S
Citation: M. Meaudre et al., THERMAL ANNEALING OF LIGHT-INDUCED DEFECTS IN P-I-P AND N-I-N HYDROGENATED AMORPHOUS-SILICON STRUCTURES - INFLUENCE OF HOLE AND ELECTRON INJECTION, Journal of applied physics, 77(11), 1995, pp. 5702-5705
Authors:
MEAUDRE R
VIGNOLI S
MEAUDRE M
Citation: R. Meaudre et al., THERMAL ANNEALING OF LIGHT-INDUCED DEFECTS IN HYDROGENATED AMORPHOUS-SILICON - EVIDENCE FOR HOLE-INDUCED ANNEALING, Philosophical magazine letters, 69(6), 1994, pp. 327-332
Authors:
VIGNOLI S
MEAUDRE R
MEAUDRE M
Citation: S. Vignoli et al., EQUILIBRIUM TEMPERATURE IN INTRINSIC HYDROGENATED AMORPHOUS-SILICON UNDER ILLUMINATION, Physical review. B, Condensed matter, 50(11), 1994, pp. 7378-7383
Authors:
MEAUDRE R
MEAUDRE M
VIGNOLI S
Citation: R. Meaudre et al., RATE-EQUATION FOR METASTABLE DEFECTS IN HYDROGENATED AMORPHOUS-SILICON - THE FORM OF THE LIGHT-INDUCED ANNEALING TERM, Physical review. B, Condensed matter, 49(3), 1994, pp. 1716-1719
Authors:
MEAUDRE R
MEAUDRE M
VIGNOLI S
CABARROCAS PRI
BOUIZEM Y
THEYE ML
Citation: R. Meaudre et al., STABILITY OF HYDROGENATED AMORPHOUS-SILICON DEPOSITED BY PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION FROM HELIUM-DILUTED SILANE, Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties, 67(4), 1993, pp. 497-511
Authors:
MEAUDRE R
VIGNOLI S
MEAUDRE M
CHANEL L
Citation: R. Meaudre et al., KINETICS OF DEFECT CREATION IN HYDROGENATED AMORPHOUS-SILICON BY LIGHT-PULSES, Philosophical magazine letters, 68(3), 1993, pp. 159-165
Authors:
VIGNOLI S
MEAUDRE R
MEAUDRE M
CHANEL L
CABARROCAS PRI
Citation: S. Vignoli et al., KINETICS OF DEFECT CREATION BY PULSED-LASER ILLUMINATION IN HYDROGENATED AMORPHOUS-SILICON FILMS DEPOSITED FROM PURE SILANE AND FROM SILANE-HELIUM MIXTURES, Journal of non-crystalline solids, 166, 1993, pp. 191-194
Risultati:
1-12
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