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Results: 1-9 |
Results: 9
NONVOLATILE MEMORIES USING SRBI2TA2O9 FERROELECTRICS
Authors: JONES RE CHU PY JIANG B MELNICK BM TAYLOR DJ WHITE BE ZAFAR S PRICE D ZURCHER P GILLESPIE SJ OTSUKI T SUMI T JUDAI Y UEMOTO Y FUJII E HAYASHI S MORIWAKI N AZUMA M SHIMADA Y ARITA K HIRANO H NAKANE J NAKAKUM T KANO G
Citation: Re. Jones et al., NONVOLATILE MEMORIES USING SRBI2TA2O9 FERROELECTRICS, Integrated ferroelectrics, 17(1-4), 1997, pp. 21-30
PROCEEDINGS OF THE 8TH INTERNATIONAL-SYMPOSIUM ON INTEGRATED FERROELECTRICS - TEMPE, ARIZONA, USA MARCH 18-20 1996 .3.
Authors: DEY SK MELNICK BM TAYLOR DJ
Citation: Sk. Dey et al., PROCEEDINGS OF THE 8TH INTERNATIONAL-SYMPOSIUM ON INTEGRATED FERROELECTRICS - TEMPE, ARIZONA, USA MARCH 18-20 1996 .3., Integrated ferroelectrics, 16(1-4), 1997, pp. 15-16
PROCEEDINGS OF THE 8TH INTERNATIONAL-SYMPOSIUM ON INTEGRATED FERROELECTRICS - TEMPE, ARIZONA, USA - MARCH 18-20, 1996 .2.
Authors: DEY SK MELNICK BM TAYLOR DJ
Citation: Sk. Dey et al., PROCEEDINGS OF THE 8TH INTERNATIONAL-SYMPOSIUM ON INTEGRATED FERROELECTRICS - TEMPE, ARIZONA, USA - MARCH 18-20, 1996 .2., Integrated ferroelectrics, 15(1-4), 1997, pp. 7-8
STATISTICAL INVESTIGATION OF DIELECTRIC-BREAKDOWN OF BISMUTH TANTALATE THIN-FILM CAPACITORS
Authors: FINDER J MELNICK BM ABROKWAH J OOMS B
Citation: J. Finder et al., STATISTICAL INVESTIGATION OF DIELECTRIC-BREAKDOWN OF BISMUTH TANTALATE THIN-FILM CAPACITORS, Integrated ferroelectrics, 15(1-4), 1997, pp. 145-154
BISMUTH-BASED LAYERED PEROVSKITE THIN-FILMS AS A CHARGE STORAGE MATERIAL FOR LOW-POWER NONVOLATILE GAAS MEMORY APPLICATIONS
Authors: MELNICK BM ABROKWAH J HALLMARK J OOMS B
Citation: Bm. Melnick et al., BISMUTH-BASED LAYERED PEROVSKITE THIN-FILMS AS A CHARGE STORAGE MATERIAL FOR LOW-POWER NONVOLATILE GAAS MEMORY APPLICATIONS, Integrated ferroelectrics, 15(1-4), 1997, pp. 221-233
PROCEEDINGS OF THE 8TH INTERNATIONAL-SYMPOSIUM ON INTEGRATED FERROELECTRICS - TEMPE, ARIZONA, USA - MARCH 18-20, 1996 .1.
Authors: DEY SK MELNICK BM TAYLOR DJ
Citation: Sk. Dey et al., PROCEEDINGS OF THE 8TH INTERNATIONAL-SYMPOSIUM ON INTEGRATED FERROELECTRICS - TEMPE, ARIZONA, USA - MARCH 18-20, 1996 .1., Integrated ferroelectrics, 14(1-4), 1997, pp. 7-8
PYROELECTRIC CHARACTERISTICS OF A THIN PZT(40 60) FILM ON A PLATINUM FILM FOR INFRARED-SENSORS/
Authors: DEB KK BENNETT KW BRODY PS MELNICK BM
Citation: Kk. Deb et al., PYROELECTRIC CHARACTERISTICS OF A THIN PZT(40 60) FILM ON A PLATINUM FILM FOR INFRARED-SENSORS/, Integrated ferroelectrics, 6(1-4), 1995, pp. 253-264
CHARACTERIZATION OF AN N-CHANNEL 1T-1C NONVOLATILE MEMORY CELL USING FERROELECTRIC SRBI2TA2O9 AS THE CAPACITOR DIELECTRIC
Authors: MELNICK BM GREGORY J DEARAUJO CAP
Citation: Bm. Melnick et al., CHARACTERIZATION OF AN N-CHANNEL 1T-1C NONVOLATILE MEMORY CELL USING FERROELECTRIC SRBI2TA2O9 AS THE CAPACITOR DIELECTRIC, Integrated ferroelectrics, 11(1-4), 1995, pp. 145-160
LOSS MECHANISMS IN FINE-GRAINED FERROELECTRIC CERAMIC THIN-FILMS FOR ULSI MEMORIES (DRAMS)
Authors: SCOTT JF DEARAUJO CAP MELNICK BM
Citation: Jf. Scott et al., LOSS MECHANISMS IN FINE-GRAINED FERROELECTRIC CERAMIC THIN-FILMS FOR ULSI MEMORIES (DRAMS), Journal of alloys and compounds, 212, 1994, pp. 451-454
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