Authors: LIU Q LAKNER H MENDORF C TAUDT W HEUKEN M HEIME K KUBALEK E

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Authors: LAKNER H MENDORF C BOLLIG B PROST W TEGUDE FJ

Citation: H. Lakner et al., DETERMINATION OF INTERFACE COMPOSITION IN III-V HETEROJUNCTION DEVICES (HT AND RTD) WITH ATOMIC-RESOLUTION USING STEM TECHNIQUES, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 52-56

Authors: LAKNER H BROCKT G MENDORF C RADEFELD A SCHOLZ F HARLE V OFF J SOHMER A

Citation: H. Lakner et al., CHARACTERIZATION OF MOVPE-GROWN (AL,IN,GA)N HETEROSTRUCTURES BY QUANTITATIVE ANALYTICAL ELECTRON-MICROSCOPY, Journal of electronic materials, 26(10), 1997, pp. 1103-1108

Authors: HEUKEN M EICHELSTREIBER CV BEHRES A SCHINELLER B HEIME K MENDORF C BROCKT G LAKNER H

Citation: M. Heuken et al., MOVPE GROWTH OF INPSB INAS HETEROSTRUCTURES FOR MIDINFRARED EMITTERS/, Journal of electronic materials, 26(10), 1997, pp. 1221-1224