AAAAAA
Results:
1-14
|
Results: 14
Authors:
DEIXLER P
TERRY J
HAWKINS ID
EVANSFREEMAN JH
PEAKER AR
RUBALDO L
MAUDE DK
PORTAL JC
DOBACZEWSKI L
NIELSEN KB
LARSEN AN
MESLI A
Citation: P. Deixler et al., LAPLACE-TRANSFORM DEEP-LEVEL TRANSIENT SPECTROSCOPY STUDIES OF THE G4GOLD-HYDROGEN COMPLEX IN SILICON, Applied physics letters, 73(21), 1998, pp. 3126-3128
Authors:
MESLI A
KRINGHOJ P
LARSEN AN
Citation: A. Mesli et al., PINNING BEHAVIOR OF GOLD-RELATED LEVELS IN SI USING SI1-XGEX ALLOY LAYERS, Physical review. B, Condensed matter, 56(20), 1997, pp. 13202-13217
Authors:
LARSEN AN
ORAIFEARTAIGH C
BARKLIE RC
HOLM B
PRIOLO F
FRANZO G
LULLI G
BIANCONI M
NIPOTI R
LINDNER JKN
MESLI A
GROB JJ
CRISTIANO F
HEMMENT PLF
Citation: An. Larsen et al., MEV ION-IMPLANTATION INDUCED DAMAGE IN RELAXED SI1-XGEX, Journal of applied physics, 81(5), 1997, pp. 2208-2218
Authors:
GRENIER B
MESLI A
CALES J
CASTEL JP
MAURETTE P
Citation: B. Grenier et al., SEVERE HYPERTHERMIA AFTER ACUTE CESSATION OF CONTINUOUS INTRATHECAL BACLOFEN ADMINISTRATION, Annales francaises d'anesthesie et de reanimation, 15(5), 1996, pp. 659-662
Authors:
PRIOLO F
SPINELLA C
ALBERTAZZI E
BIANCONI M
LULLI G
NIPOTI R
LINDNER JKN
MESLI A
BARKLIE RC
SEALY L
HOLM B
LARSEN AN
Citation: F. Priolo et al., ION-IMPLANTATION INDUCED DAMAGE IN RELAXED SI0.75GE0.25, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 301-304
Authors:
SIMON L
FAURE J
MESLI A
HEISER T
GROB JJ
BALLADORE JL
Citation: L. Simon et al., XTEM AND IR ABSORPTION ANALYSIS OF SILICON-CARBIDE PREPARED BY HIGH-TEMPERATURE CARBON IMPLANTATION IN SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 330-333
Authors:
HEISER T
MESLI A
Citation: T. Heiser et A. Mesli, IRON DIFFUSIVITY IN SILICON - IMPACT OF CHARGE-STATE - COMMENT, Applied physics letters, 68(13), 1996, pp. 1868-1869
Authors:
DIANI M
MESLI A
KUBLER L
CLAVERIE A
BALLADORE JL
AUBEL D
PEYRE S
HEISER T
BISCHOFF JL
Citation: M. Diani et al., OBSERVATION OF SI OUT-DIFFUSION RELATED DEFECTS IN SIC GROWTH ON SI(001), Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 110-113
Authors:
CLAVERIE A
FAURE J
BALLADORE JL
SIMON L
MESLI A
DIANI M
KUBLER L
AUBEL D
Citation: A. Claverie et al., A PARTICULAR EPITAXIAL SI1-YCY ALLOY GROWTH MODE ON SI(001) EVIDENCEDBY CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPY, Journal of crystal growth, 157(1-4), 1995, pp. 420-425
Authors:
DIANI M
KUBLER L
BISCHOFF JL
GROB JJ
PREVOT B
MESLI A
Citation: M. Diani et al., SYNTHESIS OF EPITAXIAL SI1-YCY ALLOYS ON SI(001) WITH HIGH-LEVEL OF NON-USUAL SUBSTITUTIONAL CARBON INCORPORATION, Journal of crystal growth, 157(1-4), 1995, pp. 431-435
Authors:
ZAMOUCHE A
HEISER T
MESLI A
Citation: A. Zamouche et al., INVESTIGATION OF FAST DIFFUSING IMPURITIES IN SILICON BY A TRANSIENT ION DRIFT METHOD, Applied physics letters, 66(5), 1995, pp. 631-633
Authors:
MESLI A
HEISER T
MULHEIM E
Citation: A. Mesli et al., COPPER DIFFUSIVITY IN SILICON - A REEXAMINATION, Materials science & engineering. B, Solid-state materials for advanced technology, 25(2-3), 1994, pp. 141-146
Authors:
MONTHEARD JP
MESLI A
BELFKIRA A
RAIHANE M
PHAM QT
Citation: Jp. Montheard et al., COPOLYMERIZATION OF VINYLIDENE CYANIDE WITH METHACRYLONITRILE AND CYANOVINYLACETATE C-13 NMR-STUDIES OF THEIR STRUCTURE, Pure and applied chemistry, A31, 1994, pp. 1-8
Authors:
HEISER T
MESLI A
Citation: T. Heiser et A. Mesli, DETERMINATION OF THE COPPER DIFFUSION-COEFFICIENT IN SILICON FROM TRANSIENT ION-DRIFT, Applied physics. A, Solids and surfaces, 57(4), 1993, pp. 325-328
Risultati:
1-14
|