Authors:
DOOLITTLE WA
KROPEWNICKI T
CARTERCOMAN C
STOCK S
KOHL P
JOKERST NM
METZGER RA
KANG S
LEE KK
MAY G
BROWN AS
Citation: Wa. Doolittle et al., GROWTH OF GAN ON LITHIUM GALLATE SUBSTRATES FOR DEVELOPMENT OF A GAN THIN COMPLIANT SUBSTRATE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1300-1304
Authors:
SHEN JJ
BROWN AS
METZGER RA
SIEVERS B
BOTTOMLEY L
ECKERT P
CARTER WB
Citation: Jj. Shen et al., MODIFICATION OF QUANTUM-DOT PROPERTIES VIA SURFACE EXCHANGE AND ANNEALING - SUBSTRATE-TEMPERATURE EFFECTS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1326-1329
Authors:
LUDVIGSON GA
GONZALEZ LA
METZGER RA
WITZKE BJ
BRENNER RL
MURILLO AP
WHITE TS
Citation: Ga. Ludvigson et al., METEORIC SPHAEROSIDERITE LINES AND THEIR USE FOR PALEOHYDROLOGY AND PALEOCLIMATOLOGY, Geology, 26(11), 1998, pp. 1039-1042
Authors:
CARTERCOMAN C
BROWN AS
METZGER RA
JOKERST NM
PICKERING J
BOTTOMLEY LA
Citation: C. Cartercoman et al., A NEW MECHANISM FOR SPONTANEOUS NANOSTRUCTURE FORMATION ON BOTTOM-PATTERNED COMPLIANT SUBSTRATES, Applied physics letters, 71(19), 1997, pp. 2773-2775
Citation: Ra. Metzger, MULTIELEMENT RECONSTRUCTIONS OF PALMATOLEPIS AND POLYGNATHUS (UPPER DEVONIAN, FAMENNIAN) FROM THE CANNING BASIN, AUSTRALIA, AND BACTRIAN MOUNTAIN, NEVADA, Journal of paleontology, 68(3), 1994, pp. 617-647
Citation: M. Hafizi et al., DEPENDENCE OF DC CURRENT GAIN AND FMAX OF ALINAS GAINAS HBTS ON BASE SHEET RESISTANCE/, IEEE electron device letters, 14(7), 1993, pp. 323-325
Authors:
HAFIZI M
STANCHINA WE
METZGER RA
MACDONALD PA
WILLIAMS F
Citation: M. Hafizi et al., TEMPERATURE-DEPENDENCE OF DC AND RF CHARACTERISTICS OF ALINAS GAINAS HBTS/, I.E.E.E. transactions on electron devices, 40(9), 1993, pp. 1583-1588
Authors:
HAFIZI M
STANCHINA WE
METZGER RA
JENSEN JF
WILLIAMS F
Citation: M. Hafizi et al., RELIABILITY OF ALINAS GAINAS HETEROJUNCTION BIPOLAR-TRANSISTORS/, I.E.E.E. transactions on electron devices, 40(12), 1993, pp. 2178-2185
Authors:
METZGER RA
HAFIZI M
STANCHINA WE
LIU T
WILSON RG
MCCRAY LG
Citation: Ra. Metzger et al., CONFINEMENT OF HIGH BE DOPING LEVELS IN ALINAS GAINAS NPN HETEROJUNCTION BIPOLAR-TRANSISTORS BY LOW-TEMPERATURE MOLECULAR-BEAM EPITAXIAL-GROWTH/, Applied physics letters, 63(10), 1993, pp. 1360-1362
Citation: M. Hafizi et al., STABILITY OF BERYLLIUM-DOPED COMPOSITIONALLY GRADED AND ABRUPT ALINASGAINAS HETEROJUNCTION BIPOLAR-TRANSISTORS/, Applied physics letters, 63(1), 1993, pp. 93-95