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Results: 1-17 |
Results: 17
BOTTOM-EMITTING VCSELS FOR HIGH-CW OPTICAL OUTPUT POWER
Authors: GRABHERR M JAGER R MILLER M THALMAIER C HEERLEIN J MICHALZIK R EBELING KJ
Citation: M. Grabherr et al., BOTTOM-EMITTING VCSELS FOR HIGH-CW OPTICAL OUTPUT POWER, IEEE photonics technology letters, 10(8), 1998, pp. 1061-1063
BIASED AND BIAS-FREE MULTI-GB S DATA LINKS USING GAAS VCSELS AND 1300-NM SINGLE-MODE FIBER/
Authors: SCHNITZER P JAGER R JUNG C MICHALZIK R WIEDENMANN D MEDERER F EBELING KJ
Citation: P. Schnitzer et al., BIASED AND BIAS-FREE MULTI-GB S DATA LINKS USING GAAS VCSELS AND 1300-NM SINGLE-MODE FIBER/, IEEE photonics technology letters, 10(12), 1998, pp. 1781-1783
CW OPERATION OF A DIODE CASCADE INGAAS QUANTUM-WELL VCSEL
Authors: SCHMID W WIEDENMANN D GRABHERR M JAGER R MICHALZIK R EBELING KJ
Citation: W. Schmid et al., CW OPERATION OF A DIODE CASCADE INGAAS QUANTUM-WELL VCSEL, Electronics Letters, 34(6), 1998, pp. 553-555
NOISE CHARACTERISTICS OF 860 NM SINGLE-MODE VERTICAL-CAVITY SURFACE-EMITTING LASERS
Authors: WIEDENMANN D SCHNITZER P JUNG C GRABHERR M JAGER R MICHALZIK R EBELING KJ
Citation: D. Wiedenmann et al., NOISE CHARACTERISTICS OF 860 NM SINGLE-MODE VERTICAL-CAVITY SURFACE-EMITTING LASERS, Applied physics letters, 73(6), 1998, pp. 717-719
HIGH-BIT-RATE DATA-TRANSMISSION WITH SHORT-WAVELENGTH OXIDIZED VCSELS- TOWARD BIAS-FREE OPERATION
Authors: MICHALZIK R SCHNITZER P FIEDLER U WIEDENMANN D EBELING KJ
Citation: R. Michalzik et al., HIGH-BIT-RATE DATA-TRANSMISSION WITH SHORT-WAVELENGTH OXIDIZED VCSELS- TOWARD BIAS-FREE OPERATION, IEEE journal of selected topics in quantum electronics, 3(2), 1997, pp. 396-404
HIGH-PERFORMANCE OXIDE-CONFINED GAAS VCSELS
Authors: WEIGL B GRABHERR M JUNG C JAGER R REINER G MICHALZIK R SOWADA D EBELING KJ
Citation: B. Weigl et al., HIGH-PERFORMANCE OXIDE-CONFINED GAAS VCSELS, IEEE journal of selected topics in quantum electronics, 3(2), 1997, pp. 409-415
EFFICIENT SINGLE-MODE OXIDE-CONFINED GAAS VCSELS EMITTING IN THE 850-NM WAVELENGTH REGIME
Authors: GRABHERR M JAGER R MICHALZIK R WEIGL B REINER G EBELING KJ
Citation: M. Grabherr et al., EFFICIENT SINGLE-MODE OXIDE-CONFINED GAAS VCSELS EMITTING IN THE 850-NM WAVELENGTH REGIME, IEEE photonics technology letters, 9(10), 1997, pp. 1304-1306
NUMERICAL-SIMULATION OF BROAD-AREA HIGH-POWER SEMICONDUCTOR-LASER AMPLIFIERS
Authors: DAI Z MICHALZIK R UNGER P EBELING KJ
Citation: Z. Dai et al., NUMERICAL-SIMULATION OF BROAD-AREA HIGH-POWER SEMICONDUCTOR-LASER AMPLIFIERS, IEEE journal of quantum electronics, 33(12), 1997, pp. 2240-2254
57-PERCENT WALLPLUG EFFICIENCY OXIDE-CONFINED 850NM WAVELENGTH GAAS VCSELS
Authors: JAGER R GRABHERR M JUNG C MICHALZIK R REINER G WEIGL B EBELING KJ
Citation: R. Jager et al., 57-PERCENT WALLPLUG EFFICIENCY OXIDE-CONFINED 850NM WAVELENGTH GAAS VCSELS, Electronics Letters, 33(4), 1997, pp. 330-331
4.8 MW SINGLEMODE OXIDE CONFINED TOP-SURFACE EMITTING VERTICAL-CAVITYLASER-DIODES
Authors: JUNG C JAGER R GRABHERR M SCHNITZER P MICHALZIK R WEIGL B MULLER S EBELING KJ
Citation: C. Jung et al., 4.8 MW SINGLEMODE OXIDE CONFINED TOP-SURFACE EMITTING VERTICAL-CAVITYLASER-DIODES, Electronics Letters, 33(21), 1997, pp. 1790-1791
EFFICIENT VERTICAL-CAVITY SURFACE-EMITTING LASER-DIODES FOR HIGH BIT-RATE OPTICAL-DATA TRANSMISSION
Authors: EBELING KJ FIEDLER U MICHALZIK R REINER G WEIGL B
Citation: Kj. Ebeling et al., EFFICIENT VERTICAL-CAVITY SURFACE-EMITTING LASER-DIODES FOR HIGH BIT-RATE OPTICAL-DATA TRANSMISSION, AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS, 50(5), 1996, pp. 316-326
HIGH-POWER SINGLE-MODE SELECTIVELY OXIDIZED VERTICAL-CAVITY SURFACE-EMITTING LASERS
Authors: WEIGL B GRABHERR M MICHALZIK R REINER G EBELING KJ
Citation: B. Weigl et al., HIGH-POWER SINGLE-MODE SELECTIVELY OXIDIZED VERTICAL-CAVITY SURFACE-EMITTING LASERS, IEEE photonics technology letters, 8(8), 1996, pp. 971-973
DELAYED SELF-HETERODYNE LINEWIDTH MEASUREMENT OF VCSELS
Authors: SCHMID W JUNG C WEIGL B REINER G MICHALZIK R EBELING KJ
Citation: W. Schmid et al., DELAYED SELF-HETERODYNE LINEWIDTH MEASUREMENT OF VCSELS, IEEE photonics technology letters, 8(10), 1996, pp. 1288-1290
PERFORMANCE-CHARACTERISTICS OF VERTICAL-CAVITY SEMICONDUCTOR-LASER AMPLIFIERS
Authors: WIEDENMANN D MOELLER B MICHALZIK R EBELING KJ
Citation: D. Wiedenmann et al., PERFORMANCE-CHARACTERISTICS OF VERTICAL-CAVITY SEMICONDUCTOR-LASER AMPLIFIERS, Electronics Letters, 32(4), 1996, pp. 342-343
HIGH-POWER TOP-SURFACE EMITTING OXIDE CONFINED VERTICAL-CAVITY LASER-DIODES
Authors: GRABHERR M WEIGL B REINER G MICHALZIK R MILLER M EBELING KJ
Citation: M. Grabherr et al., HIGH-POWER TOP-SURFACE EMITTING OXIDE CONFINED VERTICAL-CAVITY LASER-DIODES, Electronics Letters, 32(18), 1996, pp. 1723-1724
GENERALIZED BV DIAGRAMS FOR HIGHER-ORDER TRANSVERSE-MODES IN PLANAR VERTICAL-CAVITY LASER-DIODES
Authors: MICHALZIK R EBELING KJ
Citation: R. Michalzik et Kj. Ebeling, GENERALIZED BV DIAGRAMS FOR HIGHER-ORDER TRANSVERSE-MODES IN PLANAR VERTICAL-CAVITY LASER-DIODES, IEEE journal of quantum electronics, 31(8), 1995, pp. 1371-1379
MODELING AND DESIGN OF PROTON-IMPLANTED ULTRALOW-THRESHOLD VERTICAL-CAVITY LASER-DIODES
Authors: MICHALZIK R EBELING KJ
Citation: R. Michalzik et Kj. Ebeling, MODELING AND DESIGN OF PROTON-IMPLANTED ULTRALOW-THRESHOLD VERTICAL-CAVITY LASER-DIODES, IEEE journal of quantum electronics, 29(6), 1993, pp. 1963-1974
Risultati: 1-17 |