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Results: 1-11 |
Results: 11
DRY-ETCHING OF (BA,SR)TIO3 WITH CL-2, SF6, AND CF4
Authors: MILKOVE KR
Citation: Kr. Milkove, DRY-ETCHING OF (BA,SR)TIO3 WITH CL-2, SF6, AND CF4, Integrated ferroelectrics (Print), 21(1-4), 1998, pp. 53-62
EFFECTS OF ARGON ADDITION TO A PLATINUM DRY ETCH PROCESS
Authors: MILKOVE KR COFFIN JA DZIOBKOWSKI C
Citation: Kr. Milkove et al., EFFECTS OF ARGON ADDITION TO A PLATINUM DRY ETCH PROCESS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(3), 1998, pp. 1483-1488
NUMERICAL-SIMULATION OF ETCHING AND DEPOSITION PROCESSES
Authors: HAMAGUCHI S MAYO AA ROSSNAGEL SM KOTECKI DE MILKOVE KR WANG C FARRELL CE
Citation: S. Hamaguchi et al., NUMERICAL-SIMULATION OF ETCHING AND DEPOSITION PROCESSES, JPN J A P 1, 36(7B), 1997, pp. 4762-4768
ANALYSIS OF A FENCE-FREE PLATINUM ETCH PROCESS
Authors: MILKOVE KR WANG CX
Citation: Kr. Milkove et Cx. Wang, ANALYSIS OF A FENCE-FREE PLATINUM ETCH PROCESS, Integrated ferroelectrics, 17(1-4), 1997, pp. 403-419
A REACTIVE ION ETCH STUDY FOR PRODUCING PATTERNED PLATINUM STRUCTURES
Authors: FARRELL CE MILKOVE KR WANG C KOTECKI DE
Citation: Ce. Farrell et al., A REACTIVE ION ETCH STUDY FOR PRODUCING PATTERNED PLATINUM STRUCTURES, Integrated ferroelectrics, 16(1-4), 1997, pp. 109-138
INSIGHT INTO THE DRY-ETCHING OF FENCE-FREE PATTERNED PLATINUM STRUCTURES
Authors: MILKOVE KR WANG CX
Citation: Kr. Milkove et Cx. Wang, INSIGHT INTO THE DRY-ETCHING OF FENCE-FREE PATTERNED PLATINUM STRUCTURES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(3), 1997, pp. 596-603
LITHOGRAPHY AND FABRICATION PROCESSES FOR SUB-100 NM SCALE COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR
Authors: WIND SJ TAUR Y LEE YH MII Y VISWANATHAN RG BUCCHIGNANO JJ POMERENE AT SICINA RM MILKOVE KR STIEBRITZ JW ROY RA HU CK MANNY MP COHEN S CHEN W
Citation: Sj. Wind et al., LITHOGRAPHY AND FABRICATION PROCESSES FOR SUB-100 NM SCALE COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2688-2695
STRAIN RELAXATION IN SILICON-GERMANIUM MICROSTRUCTURES OBSERVED BY RESONANT-TUNNELING SPECTROSCOPY
Authors: ZASLAVSKY A MILKOVE KR LEE YH FERLAND B SEDGWICK TO
Citation: A. Zaslavsky et al., STRAIN RELAXATION IN SILICON-GERMANIUM MICROSTRUCTURES OBSERVED BY RESONANT-TUNNELING SPECTROSCOPY, Applied physics letters, 67(26), 1995, pp. 3921-3923
HIGH-EFFICIENCY AND LOW-THRESHOLD CURRENT STRAINED V-GROOVE QUANTUM-WIRE LASERS
Authors: TIWARI S PETTIT GD MILKOVE KR LEGOUES F DAVIS RJ WOODALL JM
Citation: S. Tiwari et al., HIGH-EFFICIENCY AND LOW-THRESHOLD CURRENT STRAINED V-GROOVE QUANTUM-WIRE LASERS, Applied physics letters, 64(26), 1994, pp. 3536-3538
FABRICATION OF 3-TERMINAL RESONANT-TUNNELING DEVICES IN SILICON-BASEDMATERIAL
Authors: ZASLAVSKY A MILKOVE KR LEE YH CHAN KK STERN F GRUTZMACHER DA RISHTON SA STANIS C SEDGWICK TO
Citation: A. Zaslavsky et al., FABRICATION OF 3-TERMINAL RESONANT-TUNNELING DEVICES IN SILICON-BASEDMATERIAL, Applied physics letters, 64(13), 1994, pp. 1699-1701
INTEGRATED APPROACH TO QUANTUM-DOT FABRICATION
Authors: RISHTON SA LEE YH MILKOVE KR HONG JM BOEGLI V DEFRANZA M SIVAN U KERN DP
Citation: Sa. Rishton et al., INTEGRATED APPROACH TO QUANTUM-DOT FABRICATION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2607-2611
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