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Results: 6

Authors: LI VZQ MIRABEDINI MR HORNUNG BE HEINISCH HH XU M BATCHELOR D MAHER DM WORTMAN JJ KUEHN RT
Citation: Vzq. Li et al., STRUCTURE AND PROPERTIES OF RAPID THERMAL CHEMICAL-VAPOR-DEPOSITED POLYCRYSTALLINE SILICON-GERMANIUM FILMS ON SIO2 USING SI2H6, GEH4, AND B2H6 GASES, Journal of applied physics, 83(10), 1998, pp. 5469-5476

Authors: HEINISCH HH HORNUNG BE LINKOUS RB CRAIG SA MIRABEDINI MR WORTMAN JJ
Citation: Hh. Heinisch et al., IMPACT OF FLOATING-GATE DOPANT CONCENTRATION AND INTERPOLY DIELECTRICPROCESSING ON TUNNEL DIELECTRIC RELIABILITY, Journal of the Electrochemical Society, 145(4), 1998, pp. 1351-1355

Authors: MIRABEDINI MR GOODWINJOHANSSON SH MASSOUD HZ
Citation: Mr. Mirabedini et al., SUBMICROMETER ELEVATED SOURCE AND DRAIN MOSFET TECHNOLOGY USING E-BEAM EVAPORATED SILICON, Electronics Letters, 33(13), 1997, pp. 1183-1184

Authors: LI VZQ MIRABEDINI MR KUEHN RT WORTMAN JJ OZTURK MC BATCHELOR D CHRISTENSEN K MAHER DM
Citation: Vzq. Li et al., RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION OF IN-SITU BORON-DOPED POLYCRYSTALLINE SILICON-GERMANIUM FILMS ON SILICON DIOXIDE FOR COMPLIMENTARY-METAL-OXIDE-SEMICONDUCTOR APPLICATIONS, Applied physics letters, 71(23), 1997, pp. 3388-3390

Authors: MIRABEDINI MR GOODWINJOHANSSON SH MASSOUD HZ FAIR RB
Citation: Mr. Mirabedini et al., SUBQUARTER-MICROMETER ELEVATED SOURCE-AND-DRAIN MOSFET STRUCTURE USING POLYSILICON SPACERS, Electronics Letters, 30(19), 1994, pp. 1631-1632

Authors: MIRABEDINI MR GOODWINJOHANSSON SH MASSOUD HZ
Citation: Mr. Mirabedini et al., NEW PROPERTIES AND APPLICATIONS OF ELECTRON-BEAM EVAPORATED SILICON IN SUBMICRON ELEVATED SOURCE DRAIN METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS/, Applied physics letters, 65(6), 1994, pp. 728-730
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