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Results: 1-25 | 26-34 |
Results: 26-34/34
GALLIUM VACANCY RELATED DEFECTS IN SILICON DOPED GAAS GROWN AT LOW-TEMPERATURES
Authors: MCQUAID SA PRITCHARD RE NEWMAN RC OHAGAN S MISSOUS M
Citation: Sa. Mcquaid et al., GALLIUM VACANCY RELATED DEFECTS IN SILICON DOPED GAAS GROWN AT LOW-TEMPERATURES, Materials science & engineering. B, Solid-state materials for advanced technology, 22(1), 1993, pp. 23-26
PRESSURE-DEPENDENCE OF THE SCHOTTKY-BARRIER HEIGHTS IN AL ALGAAS JUNCTIONS/
Authors: DOBACZEWSKI L LANGER JM MISSOUS M
Citation: L. Dobaczewski et al., PRESSURE-DEPENDENCE OF THE SCHOTTKY-BARRIER HEIGHTS IN AL ALGAAS JUNCTIONS/, Acta Physica Polonica. A, 84(4), 1993, pp. 741-744
MOLECULAR-BEAM EPITAXY OF AL-CHI-GA1-CHI-SB AND AL-CHI-GA1-CHI-AS - NEW DONOR DOPING SOURCES
Authors: DOBACZEWSKI L MISSOUS M SINGER KE ZYTKIEWICZ ZR
Citation: L. Dobaczewski et al., MOLECULAR-BEAM EPITAXY OF AL-CHI-GA1-CHI-SB AND AL-CHI-GA1-CHI-AS - NEW DONOR DOPING SOURCES, Acta Physica Polonica. A, 84(4), 1993, pp. 826-828
VERY-LOW RESISTANCE NONALLOYED AND IN-SITU OHMIC CONTACTS TO N-GAAS USING DELTA-DOPED SURFACE-LAYERS
Authors: MISSOUS M TASKIN T
Citation: M. Missous et T. Taskin, VERY-LOW RESISTANCE NONALLOYED AND IN-SITU OHMIC CONTACTS TO N-GAAS USING DELTA-DOPED SURFACE-LAYERS, Semiconductor science and technology, 8(10), 1993, pp. 1848-1853
HEAVILY SI OR BE DOPED MBE GAAS GROWN AT LOW-TEMPERATURES
Authors: MCQUAID SA NEWMAN RC MISSOUS M OHAGAN S
Citation: Sa. Mcquaid et al., HEAVILY SI OR BE DOPED MBE GAAS GROWN AT LOW-TEMPERATURES, Journal of crystal growth, 127(1-4), 1993, pp. 515-518
ON THE RICHARDSON CONSTANT OF INTIMATE METAL-GAAS (111)B SCHOTTKY DIODES GROWN BY MOLECULAR-BEAM EPITAXY
Authors: PILKINGTON SJ MISSOUS M WOOLF DA
Citation: Sj. Pilkington et al., ON THE RICHARDSON CONSTANT OF INTIMATE METAL-GAAS (111)B SCHOTTKY DIODES GROWN BY MOLECULAR-BEAM EPITAXY, Journal of applied physics, 74(10), 1993, pp. 6256-6260
TEMPERATURE-DEPENDENCE OF THE SCHOTTKY-BARRIER IN AL ALGAAS METAL-SEMICONDUCTOR JUNCTIONS/
Authors: REVVA P LANGER JM MISSOUS M PEAKER AR
Citation: P. Revva et al., TEMPERATURE-DEPENDENCE OF THE SCHOTTKY-BARRIER IN AL ALGAAS METAL-SEMICONDUCTOR JUNCTIONS/, Journal of applied physics, 74(1), 1993, pp. 416-425
MAGNETOOPTICS OF EXCITONS IN A CENTER SI DELTA-DOPED GAAS ALGAAS QUANTUM-WELL/
Authors: RIMMER JS EVANS JH INNES A HAMILTON B MISSOUS M
Citation: Js. Rimmer et al., MAGNETOOPTICS OF EXCITONS IN A CENTER SI DELTA-DOPED GAAS ALGAAS QUANTUM-WELL/, Journal of applied physics, 73(12), 1993, pp. 8502-8505
CORRELATION BETWEEN OPTICAL SPECTROSCOPY AND CAPACITANCE-VOLTAGE PROFILE SIMULATION APPLIED TO INTERFACE STATES IN MULTILAYER GAAS ALGAAS HETEROSTRUCTURES/
Authors: RIMMER JS HAMILTON B DAWSON P MISSOUS M PEAKER AR
Citation: Js. Rimmer et al., CORRELATION BETWEEN OPTICAL SPECTROSCOPY AND CAPACITANCE-VOLTAGE PROFILE SIMULATION APPLIED TO INTERFACE STATES IN MULTILAYER GAAS ALGAAS HETEROSTRUCTURES/, Journal of applied physics, 73(10), 1993, pp. 5032-5037
Risultati: 1-25 | 26-34 |