Authors: YOKOTA K TAMURA S MIYASHITA F

Citation: K. Yokota et al., HETEROEPITAXIAL GROWTH OF GAAS ON SI SUBSTRATES USING LOW-ENERGY GA AND AS ION-BEAMS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 141(1-4), 1998, pp. 562-565

Authors: YOKOTA K NAKAMURA T KITAGAWA T MIYASHITA F HIRAI K TAKANO H KUMAGAI M

Citation: K. Yokota et al., REDISTRIBUTION OF IMPLANTED IMPURITIES IN DUAL AS+ AND B+ IMPLANTED SILICON DURING ANNEALING, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 74-77

Authors: YOKOTA K HOSOKAWA K ODA K MIYASHITA F HIRAI K TAKANO H KUMAGAI M ANDO Y MATSUDA K

Citation: K. Yokota et al., RELIABILITY OF SHALLOW N(-TYPE LAYERS FORMED IN DUAL AS AND B IMPLANTED SILICON BY RAPID THERMAL ANNEALING()), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 121(1-4), 1997, pp. 295-298

Authors: ITO S IWAMATSU T SATO H ASANO M KAWANO K MIYASHITA F

Citation: S. Ito et al., PASSIVATE SINX HALF-TONE PHASE-SHIFTING MASK FOR DEEP-ULTRAVIOLET EXPOSURE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 4199-4202

Authors: MIYASHITA F YOKOTA K

Citation: F. Miyashita et K. Yokota, PLASMA-ASSISTED LOW-TEMPERATURE BORIDATION OF PURE IRON AND STEELS, Surface & coatings technology, 84(1-3), 1996, pp. 334-337

Authors: YOKOTA K OKAMOTO Y MIYASHITA F HIRAO T WATANABE M SEKINE K ANDO Y MATSUDA K

Citation: K. Yokota et al., DUAL ARSENIC AND BORON ION-IMPLANTATION IN SILICON, Journal of applied physics, 75(11), 1994, pp. 7247-7251