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Results: 26-45/45
Authors:
KIM W
SALVADOR A
BOTCHKAREV AE
AKTAS O
MOHAMMAD SN
MORCOC H
Citation: W. Kim et al., MG-DOPED P-TYPE GAN GROWN BY REACTIVE MOLECULAR-BEAM EPITAXY, Applied physics letters, 69(4), 1996, pp. 559-561
Authors:
AKTAS O
FAN ZF
MOHAMMAD SN
BOTCHKAREV AE
MORKOC H
Citation: O. Aktas et al., HIGH-TEMPERATURE CHARACTERISTICS OF ALGAN GAN MODULATION-DOPED FIELD-EFFECT TRANSISTORS/, Applied physics letters, 69(25), 1996, pp. 3872-3874
Authors:
PARK DG
DIATEZUA DM
CHEN Z
MOHAMMAD SN
MORKOC H
Citation: Dg. Park et al., CHARACTERISTICS OF SI3N4 SI/N-GAAS METAL-INSULATOR-SEMICONDUCTOR INTERFACES GROWN ON GAAS(111)B SUBSTRATE/, Applied physics letters, 69(20), 1996, pp. 3025-3027
Authors:
CHEN Z
PARK DG
STENGAL F
MOHAMMAD SN
MORKOC H
Citation: Z. Chen et al., METAL-INSULATOR-SEMICONDUCTOR STRUCTURES ON P-TYPE GAAS WITH LOW INTERFACE STATE DENSITY, Applied physics letters, 69(2), 1996, pp. 230-232
Authors:
RUVIMOV S
LILIENTALWEBER Z
WASHBURN J
DUXSTAD KJ
HALLER EE
FAN ZF
MOHAMMAD SN
KIM W
BOTCHKAREV AE
MORKOC H
Citation: S. Ruvimov et al., MICROSTRUCTURE OF TI AL AND TI/AL/NI/AU OHMIC CONTACTS FOR N-GAN/, Applied physics letters, 69(11), 1996, pp. 1556-1558
Authors:
MOHAMMAD SN
FAN ZF
SALVADOR A
AKTAS O
BOTCHKAREV AE
KIM W
MORKOC H
Citation: Sn. Mohammad et al., PHOTOLUMINESCENCE CHARACTERIZATION OF THE QUANTUM-WELL STRUCTURE AND INFLUENCE OF OPTICAL ILLUMINATION ON THE ELECTRICAL PERFORMANCE OF ALGAN GAN MODULATION-DOPED FIELD-EFFECT TRANSISTORS/, Applied physics letters, 69(10), 1996, pp. 1420-1422
Authors:
FAN ZF
MOHAMMAD SN
KIM W
AKTAS O
BOTCHKAREV AE
MORKOC H
Citation: Zf. Fan et al., VERY-LOW RESISTANCE MULTILAYER OHMIC CONTACT TO N-GAN, Applied physics letters, 68(12), 1996, pp. 1672-1674
Authors:
MOHAMMAD SN
CARTER RL
Citation: Sn. Mohammad et Rl. Carter, MOBILITY DIFFUSIVITY RELATIONSHIP FOR DEGENERATE SEMICONDUCTORS UNDERMECHANICAL-STRESS, Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties, 72(1), 1995, pp. 13-18
Authors:
REED J
TAO M
PARK DG
BOTCHKAREV A
FAN Z
SUZUE SK
LI D
GAO GB
MOHAMMAD SN
CHEY SJ
VANNOSTRAND JE
CAHILL DG
MORKOC H
Citation: J. Reed et al., CHARACTERISTICS OF IN-SITU DEPOSITED GAAS METAL-INSULATOR-SEMICONDUCTOR STRUCTURES, Solid-state electronics, 38(7), 1995, pp. 1351-1357
Authors:
MOHAMMAD SN
FIORENZA G
ACOVIC A
JOHNSON JB
CARTER RL
Citation: Sn. Mohammad et al., FOWLER-NORDHEIM TUNNELING OF CARRIERS IN MOS-TRANSISTORS - 2-DIMENSIONAL SIMULATION OF GATE CURRENT EMPLOYING FIELDAY, Solid-state electronics, 38(4), 1995, pp. 807-814
Authors:
MOHAMMAD SN
Citation: Sn. Mohammad, UNIFIED MODEL FOR DRIFT VELOCITIES OF ELECTRONS AND HOLES IN SEMICONDUCTORS AS A FUNCTION OF TEMPERATURE AND ELECTRIC-FIELD (VOL 35, PG 1391, 1992), Solid-state electronics, 38(3), 1995, pp. 1-1
Authors:
MORKOC H
MOHAMMAD SN
Citation: H. Morkoc et Sn. Mohammad, HIGH-LUMINOSITY BLUE AND BLUE-GREEN GALLIUM NITRIDE LIGHT-EMITTING-DIODES, Science, 267(5194), 1995, pp. 51-55
Authors:
CHEN Z
KIM W
SALVADOR A
MOHAMMAD SN
AKTAS O
MORKOC H
Citation: Z. Chen et al., SCHOTTKY BARRIERS AN ANODIC-SULFIDE-PASSIVATED GAAS AND THEIR STABILITY, Journal of applied physics, 78(6), 1995, pp. 3920-3924
Authors:
MOHAMMAD SN
MORKOC H
Citation: Sn. Mohammad et H. Morkoc, BASE TRANSIT-TIME OF GAN INGAN HETEROJUNCTION BIPOLAR-TRANSISTORS/, Journal of applied physics, 78(6), 1995, pp. 4200-4205
Authors:
MOHAMMAD SN
CHYI JI
CHEN J
MORKOC H
Citation: Sn. Mohammad et al., INFLUENCE OF NONUNIFORM DOPING ON THE UNIFORMITY OF CURRENT GAIN, BASE TRANSIT-TIME, AND RELATED PROPERTIES OF ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/, Journal of applied physics, 78(3), 1995, pp. 2105-2112
Authors:
AHMED A
MOHAMMAD SN
CARTER RL
Citation: A. Ahmed et al., THE EFFECT OF FOCUSED ION-BEAM IMPLANTATION ON THE THRESHOLD VOLTAGE OF SHORT-CHANNEL SILICON METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS, Journal of applied physics, 78(12), 1995, pp. 7007-7017
Authors:
MOHAMMAD SN
SALVADOR AA
MORKOC H
Citation: Sn. Mohammad et al., EMERGING GALLIUM NITRIDE BASED DEVICES, Proceedings of the IEEE, 83(10), 1995, pp. 1306-1355
Authors:
OZGUR A
KIM W
FAN Z
BOTCHKAREV A
SALVADOR A
MOHAMMAD SN
SVERDLOV B
MORKOC H
Citation: A. Ozgur et al., HIGH TRANSCONDUCTANCE-NORMALLY-OFF GAN MODFETS, Electronics Letters, 31(16), 1995, pp. 1389-1390
Authors:
MOHAMMAD SN
Citation: Sn. Mohammad, NEW GENERALIZATION OF DIELECTRIC SCREENING IN ELECTRONIC DEVICES WITHHEAVILY-DOPED SEMICONDUCTOR REGION(S) .1. TREATMENT FOR THE QUASI-NEUTRAL BULK REGION, Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties, 67(5), 1993, pp. 601-626
Authors:
MOHAMMAD SN
BEMIS AV
CARTER RL
RENBECK RB
Citation: Sn. Mohammad et al., TEMPERATURE, ELECTRIC-FIELD, AND DOPING DEPENDENT MOBILITIES OF ELECTRONS AND HOLES IN SEMICONDUCTORS, Solid-state electronics, 36(12), 1993, pp. 1677-1683