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Results: 1-25 | 26-40 |
Results: 26-40/40
DYNAMICS OF BOUND-EXCITON LUMINESCENCES FROM EPITAXIAL GAN
Authors: ECKEY L HOLST JC MAXIM P HEITZ R HOFFMANN A BROSER I MEYER BK WETZEL C MOKHOV EN BARANOV PG
Citation: L. Eckey et al., DYNAMICS OF BOUND-EXCITON LUMINESCENCES FROM EPITAXIAL GAN, Applied physics letters, 68(3), 1996, pp. 415-417
STRONGLY LOCALIZED EXCITONS IN GALLIUM NITRIDE
Authors: WETZEL C FISCHER S KRUGER J HALLER EE MOLNAR RJ MOUSTAKAS TD MOKHOV EN BARANOV PG
Citation: C. Wetzel et al., STRONGLY LOCALIZED EXCITONS IN GALLIUM NITRIDE, Applied physics letters, 68(18), 1996, pp. 2556-2558
CAPACITANCE SPECTROSCOPY OF BORON-DOPED SILICON-CARBIDE
Authors: BALLANDOVICH VS MOKHOV EN
Citation: Vs. Ballandovich et En. Mokhov, CAPACITANCE SPECTROSCOPY OF BORON-DOPED SILICON-CARBIDE, Semiconductors, 29(2), 1995, pp. 187-190
VACANCY DEFECTS IN SILICON-CARBIDE
Authors: GIRKA AI MOKHOV EN
Citation: Ai. Girka et En. Mokhov, VACANCY DEFECTS IN SILICON-CARBIDE, Fizika tverdogo tela, 37(11), 1995, pp. 3374-3381
IDENTIFICATION OF THE 1.19-EV LUMINESCENCE IN HEXAGONAL GAN
Authors: HEITZ R THURIAN P LOA I ECKEY L HOFFMANN A BROSER I PRESSEL K MEYER BK MOKHOV EN
Citation: R. Heitz et al., IDENTIFICATION OF THE 1.19-EV LUMINESCENCE IN HEXAGONAL GAN, Physical review. B, Condensed matter, 52(23), 1995, pp. 16508-16515
ON THE MICROSCOPIC STRUCTURES OF SHALLOW DONORS IN 6H SIC - STUDIES WITH EPR AND ENDOR
Authors: GREULICHWEBER S FEEGE M SPAETH JM KALABUKHOVA EN LUKIN SN MOKHOV EN
Citation: S. Greulichweber et al., ON THE MICROSCOPIC STRUCTURES OF SHALLOW DONORS IN 6H SIC - STUDIES WITH EPR AND ENDOR, Solid state communications, 93(5), 1995, pp. 393-397
ZEEMAN SPECTROSCOPY OF THE FE3+ CENTER IN GAN
Authors: HEITZ R THURIAN P LOA I ECKEY L HOFFMANN A BROSER I PRESSEL K MEYER BK MOKHOV EN
Citation: R. Heitz et al., ZEEMAN SPECTROSCOPY OF THE FE3+ CENTER IN GAN, Applied physics letters, 67(19), 1995, pp. 2822-2824
DISLOCATION NUCLEATION AND MOTION UNDER M ECHANICAL SURFACE DAMAGE OFSILICON-CARBIDE
Authors: TREGUBOVA AS MOKHOV EN SHULPINA IL
Citation: As. Tregubova et al., DISLOCATION NUCLEATION AND MOTION UNDER M ECHANICAL SURFACE DAMAGE OFSILICON-CARBIDE, Fizika tverdogo tela, 36(1), 1994, pp. 132-136
CHROMIUM IN SILICON-CARBIDE - ELECTRON-PARAMAGNETIC-RESONANCE STUDIES
Authors: BARANOV PG KHRAMTSOV VA MOKHOV EN
Citation: Pg. Baranov et al., CHROMIUM IN SILICON-CARBIDE - ELECTRON-PARAMAGNETIC-RESONANCE STUDIES, Semiconductor science and technology, 9(7), 1994, pp. 1340-1345
POLYTYPE TRANSFORMATIONS IN SIC-EPITAXIAL LAYERS - THE COLOR CATHODOLUMINESCENCE-SEM STUDIES
Authors: SAPARIN GV OBYDEN SK MOKHOV EN ROENKOV AD AHMEDOV BA
Citation: Gv. Saparin et al., POLYTYPE TRANSFORMATIONS IN SIC-EPITAXIAL LAYERS - THE COLOR CATHODOLUMINESCENCE-SEM STUDIES, Scanning, 16(1), 1994, pp. 21-25
GAN EPITAXIAL LAYERS GROWN ON 6H-SIC BY THE SUBLIMATION SANDWICH TECHNIQUE
Authors: WETZEL C VOLM D MEYER BK PRESSEL K NILSSON S MOKHOV EN BARANOV PG
Citation: C. Wetzel et al., GAN EPITAXIAL LAYERS GROWN ON 6H-SIC BY THE SUBLIMATION SANDWICH TECHNIQUE, Applied physics letters, 65(8), 1994, pp. 1033-1035
SIC POLYTYPES TRANSFORMATION DURING THE G ROWTH ON THE PROFILED SUBSTRATES
Authors: MOKHOV EN SAPARIN GV ROENCOV AD OBYDEN SK AKHMEDOV BA
Citation: En. Mokhov et al., SIC POLYTYPES TRANSFORMATION DURING THE G ROWTH ON THE PROFILED SUBSTRATES, Izvestia Akademii nauk SSSR. Seria fiziceskaa, 57(8), 1993, pp. 51-55
2 MM RANGE ESR OF THE TRANSMUTATION-PRODUCED PHOSPHORUS IMPURITY IN 6HSIC
Authors: KALABUKHOVA EN LUKIN SN MOKHOV EN
Citation: En. Kalabukhova et al., 2 MM RANGE ESR OF THE TRANSMUTATION-PRODUCED PHOSPHORUS IMPURITY IN 6HSIC, Fizika tverdogo tela, 35(3), 1993, pp. 703-707
LINE BURN-UP IN CATHODELUMINESCENCE SPECT RA OF SILICON-CARBIDE AND NATURAL DIAMOND AT HIGH-LEVELS OF EXCITATION
Authors: IVANOV AA KULAKOV VM MOKHOV EN CHUKICHEV MV
Citation: Aa. Ivanov et al., LINE BURN-UP IN CATHODELUMINESCENCE SPECT RA OF SILICON-CARBIDE AND NATURAL DIAMOND AT HIGH-LEVELS OF EXCITATION, Pis'ma v Zurnal tehniceskoj fiziki, 19(9), 1993, pp. 59-62
BLUE SIC-6H LIGHT-EMITTING-DIODES PREPARE D BY SUBLIMATION TECHNIQUE
Authors: VODAKOV YA VOLFSON AA ZARITSKII GV MOKHOV EN OSTROUMOV AG POTAPOV EN ROENKOV AD SEMENOV VV SOKOLOV VI SYRALEV VA UDALTSOV VE
Citation: Ya. Vodakov et al., BLUE SIC-6H LIGHT-EMITTING-DIODES PREPARE D BY SUBLIMATION TECHNIQUE, Pis'ma v Zurnal tehniceskoj fiziki, 19(13), 1993, pp. 61-64
Risultati: 1-25 | 26-40 |