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Citation: Vy. Aleshkin et al., SHALLOW ACCEPTORS IN STRAINED MULTI-QUANTUM-WELL GE GE1-XSIX HETEROSTRUCTURES/, Semiconductors (Woodbury, N.Y.), 32(10), 1998, pp. 1106-1110

Authors: GAVRILENKO VI EROFEEVA IV KOROTKOV AL KRASILNIK ZF KUZNETSOV OA MOLDAVSKAYA MD NIKONOROV VV PARAMONOV LV

Citation: Vi. Gavrilenko et al., SHALLOW ACCEPTORS IN GE GESI STRAINED MULTILAYER HETEROSTRUCTURES WITH QUANTUM-WELLS/, JETP letters, 65(2), 1997, pp. 209-214

Authors: GAVRILENKO VI KOZLOV IN MOLDAVSKAYA MD NIKONOROV VV ORLOV LK KUZNETSOV OA CHERNOV AL

Citation: Vi. Gavrilenko et al., CYCLOTRON-RESONANCE IN GE LAYERS OF GE1-XSIX-GE STRAINED HETEROSTRUCTURES, JPN J A P 1, 33(4B), 1994, pp. 2386-2387

Authors: GAVRILENKO VI KOZLOV IN KUZNETSOV OA MOLDAVSKAYA MD NIKONOROV VV ORLOV LK CHERNOV AL

Citation: Vi. Gavrilenko et al., CYCLOTRON-RESONANCE OF CHARGE-CARRIERS IN STRAINED GE GE1-XSIX HETEROSTRUCTURES/, JETP letters, 59(5), 1994, pp. 348-352