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Results: 1-10 |
Results: 10
IMPRINT FAILURES AND ASYMMETRIC ELECTRICAL-PROPERTIES INDUCED BY THERMAL-PROCESSES IN EPITAXIAL BI4TI3O12 THIN-FILMS
Authors: PARK BH HYUN SJ MOON CR CHOE BD LEE J KIM CY JO W NOH TW
Citation: Bh. Park et al., IMPRINT FAILURES AND ASYMMETRIC ELECTRICAL-PROPERTIES INDUCED BY THERMAL-PROCESSES IN EPITAXIAL BI4TI3O12 THIN-FILMS, Journal of applied physics, 84(8), 1998, pp. 4428-4435
ELECTRON-DISTRIBUTION AND CAPACITANCE-VOLTAGE CHARACTERISTICS OF N-DOPED QUANTUM-WELLS
Authors: MOON CR CHOE BD KWON SD SHIN HK LIM H
Citation: Cr. Moon et al., ELECTRON-DISTRIBUTION AND CAPACITANCE-VOLTAGE CHARACTERISTICS OF N-DOPED QUANTUM-WELLS, Journal of applied physics, 84(5), 1998, pp. 2673-2683
FERROELECTRIC CHARACTERIZATION OF HIGHLY (0001)-ORIENTED YMNO3 THIN-FILMS GROWN BY CHEMICAL SOLUTION DEPOSITION
Authors: YI WC CHOE JS MOON CR KWUN SI YOON JG
Citation: Wc. Yi et al., FERROELECTRIC CHARACTERIZATION OF HIGHLY (0001)-ORIENTED YMNO3 THIN-FILMS GROWN BY CHEMICAL SOLUTION DEPOSITION, Applied physics letters, 73(7), 1998, pp. 903-905
FERROELECTRIC CHARACTERIZATION OF HIGHLY, (0001)-ORIENTED YMNO3 THIN-FILMS GROWN BY CHEMICAL SOLUTION DEPOSITION (VOL 73, PG 903, 1998)
Authors: YI WC CHOE JS MOON CR KWUN SI YOON JG
Citation: Wc. Yi et al., FERROELECTRIC CHARACTERIZATION OF HIGHLY, (0001)-ORIENTED YMNO3 THIN-FILMS GROWN BY CHEMICAL SOLUTION DEPOSITION (VOL 73, PG 903, 1998), Applied physics letters, 73(18), 1998, pp. 2690-2690
INFLUENCE OF PARTIAL DOPANT IONIZATION ON THE CAPACITANCE-VOLTAGE PROFILES OF DELTA-DOPED STRUCTURES
Authors: MOON CR KWON SD LIM H CHOE BD
Citation: Cr. Moon et al., INFLUENCE OF PARTIAL DOPANT IONIZATION ON THE CAPACITANCE-VOLTAGE PROFILES OF DELTA-DOPED STRUCTURES, Applied physics letters, 72(26), 1998, pp. 3491-3493
SPATIAL-RESOLUTION OF CAPACITANCE-VOLTAGE PROFILES IN QUANTUM-WELL STRUCTURES
Authors: MOON CR CHOE BD KWON SD LIM H
Citation: Cr. Moon et al., SPATIAL-RESOLUTION OF CAPACITANCE-VOLTAGE PROFILES IN QUANTUM-WELL STRUCTURES, Applied physics letters, 72(10), 1998, pp. 1196-1198
SELF-CONSISTENT SIMULATION OF CAPACITANCE-VOLTAGE PROFILES IN QUANTUM-WELL STRUCTURES
Authors: MOON CR KANG DW CHOE BD KANG I KWON SD SHIN HK LIM H
Citation: Cr. Moon et al., SELF-CONSISTENT SIMULATION OF CAPACITANCE-VOLTAGE PROFILES IN QUANTUM-WELL STRUCTURES, Journal of the Korean Physical Society, 30(1), 1997, pp. 93-98
DIFFERENCE OF INTERFACE-TRAP PASSIVATION IN SCHOTTKY CONTACTS FORMED ON (NH4)(2)S-X-TREATED GAAS AND IN0.5GA0.5P
Authors: MOON CR CHOE BD KWON SD LIM H
Citation: Cr. Moon et al., DIFFERENCE OF INTERFACE-TRAP PASSIVATION IN SCHOTTKY CONTACTS FORMED ON (NH4)(2)S-X-TREATED GAAS AND IN0.5GA0.5P, Journal of applied physics, 81(6), 1997, pp. 2904-2906
ELECTRICAL CHARACTERIZATION OF PARTIALLY RELAXED INXGA1-XAS GAAS MULTIPLE-QUANTUM-WELL STRUCTURES/
Authors: MOON CR KIM I LEE JS CHOE BD KWON SD LIM H
Citation: Cr. Moon et al., ELECTRICAL CHARACTERIZATION OF PARTIALLY RELAXED INXGA1-XAS GAAS MULTIPLE-QUANTUM-WELL STRUCTURES/, Applied physics letters, 70(24), 1997, pp. 3284-3286
ELECTRON-DISTRIBUTION AND CAPACITANCE-VOLTAGE PROFILES OF MULTIPLE-QUANTUM-WELL STRUCTURE FROM SELF-CONSISTENT SIMULATIONS
Authors: MOON CR CHOE BD KWON SD LIM H
Citation: Cr. Moon et al., ELECTRON-DISTRIBUTION AND CAPACITANCE-VOLTAGE PROFILES OF MULTIPLE-QUANTUM-WELL STRUCTURE FROM SELF-CONSISTENT SIMULATIONS, Applied physics letters, 70(22), 1997, pp. 2987-2989
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