Authors:
MOSHKALYOV SA
MACHIDA M
CAMPOS DO
DULKIN A
Citation: Sa. Moshkalyov et al., SPATIALLY-RESOLVED OPTICAL-EMISSION STUDY OF SPUTTERING IN REACTIVE PLASMAS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(2), 1998, pp. 514-523
Citation: Sa. Moshkalyov et al., STUDY OF ION-INDUCED SECONDARY PHOTON-EMISSION IN REACTIVE ION ETCHING EXPERIMENT, JPN J A P 1, 36(7B), 1997, pp. 4675-4681
Authors:
MOSHKALYOV SA
DINIZ JA
SWART JW
TATSCH PJ
MACHIDA M
Citation: Sa. Moshkalyov et al., DEPOSITION OF SILICON-NITRIDE BY LOW-PRESSURE ELECTRON-CYCLOTRON-RESONANCE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION IN N-2 AR/SIH4/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 2682-2687
Authors:
LEBEDEV SV
MACHIDA M
MOSHKALYOV SA
CAMPOS DO
Citation: Sv. Lebedev et al., EXPERIMENTAL-STUDY OF THE PSEUDOSPARK-PRODUCED ELECTRON-BEAM FOR MATERIAL PROCESSING, IEEE transactions on plasma science, 25(4), 1997, pp. 754-757
Authors:
CAMPOS DO
MACHIDA M
BERNI LA
KANTOR M
MOSHKALYOV SA
LEBEDEV SV
Citation: Do. Campos et al., EXPERIMENTAL-STUDY OF CONVENTIONAL AND MULTIPASS THOMSON SCATTERING DIAGNOSTIC SYSTEMS, JPN J A P 1, 35(12A), 1996, pp. 6273-6274
Authors:
MOSHKALYOV SA
MACHIDA M
LEBEDEV SV
CAMPOS DO
Citation: Sa. Moshkalyov et al., A CONTRIBUTION OF VIBRATIONALLY EXCITED CL-2 MOLECULES TO GAAS REACTIVE ION ETCHING IN CL-2 AR/, JPN J A P 2, 35(7B), 1996, pp. 940-943