AAAAAA

   
Results: 1-12 |
Results: 12
PATTERNING OF CANTILEVERS FOR POWER SENSOR MICROSYSTEM
Authors: HASCIK S LALINSKY T MOZOLOVA Z KUZMIK J
Citation: S. Hascik et al., PATTERNING OF CANTILEVERS FOR POWER SENSOR MICROSYSTEM, Vacuum, 51(2), 1998, pp. 307-309
IRIDIUM-BASED MULTILAYER CONTACTS TO N-GAAS
Authors: LALINSKY T BREZA J VOGRINCIC P OSVALD J MOZOLOVA Z SISOLAK J
Citation: T. Lalinsky et al., IRIDIUM-BASED MULTILAYER CONTACTS TO N-GAAS, Solid-state electronics, 42(2), 1998, pp. 205-210
PREPARATION, CHARACTERIZATION AND APPLICATION OF MICROSCOPIC LINEAR HALL PROBE ARRAYS
Authors: CAMBEL V ELIAS P KUDELA R OLEJNIKOVA B NOVAK J DURICA M MAJOROS M KVITKOVIC J MOZOLOVA Z HUDEK P
Citation: V. Cambel et al., PREPARATION, CHARACTERIZATION AND APPLICATION OF MICROSCOPIC LINEAR HALL PROBE ARRAYS, Solid-state electronics, 42(2), 1998, pp. 247-251
SCHOTTKY CONTACTS ON REACTIVE-ION ETCHED INGAP
Authors: KUZMIK J DARMO J KUDELA R HASCIK S MOZOLOVA Z
Citation: J. Kuzmik et al., SCHOTTKY CONTACTS ON REACTIVE-ION ETCHED INGAP, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 2016-2020
HIGH-TEMPERATURE STABLE IR-AL N-GAAS SCHOTTKY DIODES - EFFECT OF THE BARRIER HEIGHT CONTROLLING/
Authors: LALINSKY T OSVALD J MACHAJDIK D MOZOLOVA Z SISOLAK J CONSTANTINIDIS G KOBZEV AP
Citation: T. Lalinsky et al., HIGH-TEMPERATURE STABLE IR-AL N-GAAS SCHOTTKY DIODES - EFFECT OF THE BARRIER HEIGHT CONTROLLING/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(2), 1996, pp. 657-661
THE FABRICATION OF THIN GAAS CANTILEVER BEAMS FOR POWER SENSOR MICROSYSTEM USING RIE
Authors: HASCIK S LALINSKY T KUZMIK J PORGES M MOZOLOVA Z
Citation: S. Hascik et al., THE FABRICATION OF THIN GAAS CANTILEVER BEAMS FOR POWER SENSOR MICROSYSTEM USING RIE, Vacuum, 47(10), 1996, pp. 1215-1217
MONOLITHIC GAAS-MESFET POWER SENSOR MICROSYSTEM
Authors: LALINSKY T KUZMIK J PORGES M HASCIK S MOZOLOVA Z GRNO L
Citation: T. Lalinsky et al., MONOLITHIC GAAS-MESFET POWER SENSOR MICROSYSTEM, Electronics Letters, 31(22), 1995, pp. 1914-1915
C-V ANALYSIS OF THE SCHOTTKY-BARRIER IN UNDOPED SEMIINSULATING GAAS
Authors: DUBECKY F DARMO J BETKO J MOZOLOVA Z PELFER PG
Citation: F. Dubecky et al., C-V ANALYSIS OF THE SCHOTTKY-BARRIER IN UNDOPED SEMIINSULATING GAAS, Semiconductor science and technology, 9(9), 1994, pp. 1654-1658
CHARACTERIZATION OF WNX METALLIZATION PREPARED BY ION-IMPLANTATION OFNITROGEN
Authors: GREGUSOVA D LALINSKY T MOZOLOVA Z MACHAJDIK D POCHABA I VAVRA I PORGES M
Citation: D. Gregusova et al., CHARACTERIZATION OF WNX METALLIZATION PREPARED BY ION-IMPLANTATION OFNITROGEN, Thin solid films, 249(2), 1994, pp. 250-253
HIGH-TEMPERATURE STABLE IR-AL N-GAAS SCHOTTKY DIODES/
Authors: LALINSKY T GREGUSOVA D MOZOLOVA Z BREZA J VOGRINCIC P
Citation: T. Lalinsky et al., HIGH-TEMPERATURE STABLE IR-AL N-GAAS SCHOTTKY DIODES/, Applied physics letters, 64(14), 1994, pp. 1818-1820
THE EFFECT OF OXYGEN IN WNX FILMS ON THERMAL-STABILITY OF WNX GAAS INTERFACES/
Authors: GREGUSOVA D LALINSKY T MOZOLOVA Z BREZA J VOGRINCIC P
Citation: D. Gregusova et al., THE EFFECT OF OXYGEN IN WNX FILMS ON THERMAL-STABILITY OF WNX GAAS INTERFACES/, Journal of materials science. Materials in electronics, 4(3), 1993, pp. 197-199
PHOTOELECTRICAL PROPERTIES OF GAAS MSM PHOTODETECTOR COMPATIBLE WITH PSEUDOMORPHIC HETEROSTRUCTURE MESFET
Authors: SAFRANKOVA J PORGES M LALINSKY T MOZOLOVA Z HUDEK P KOSTIC I KRAUS J VONWENDORFF W TEGUDE FJ JAGER D
Citation: J. Safrankova et al., PHOTOELECTRICAL PROPERTIES OF GAAS MSM PHOTODETECTOR COMPATIBLE WITH PSEUDOMORPHIC HETEROSTRUCTURE MESFET, Physica status solidi. a, Applied research, 140(2), 1993, pp. 111-114
Risultati: 1-12 |