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Results: 1-10 |
Results: 10
RANDOM TELEGRAPH SIGNAL - AN ATOMIC PROBE OF THE LOCAL CURRENT IN FIELD-EFFECT TRANSISTORS
Authors: MUELLER HH SCHULZ M
Citation: Hh. Mueller et M. Schulz, RANDOM TELEGRAPH SIGNAL - AN ATOMIC PROBE OF THE LOCAL CURRENT IN FIELD-EFFECT TRANSISTORS, Journal of applied physics, 83(3), 1998, pp. 1734-1741
STATISTICAL EVALUATION OF RANDOM TELEGRAPH SIGNAL AMPLITUDES IN SUB-MU-M MOSFETS
Authors: MUELLER HH SCHULZ M
Citation: Hh. Mueller et M. Schulz, STATISTICAL EVALUATION OF RANDOM TELEGRAPH SIGNAL AMPLITUDES IN SUB-MU-M MOSFETS, Microelectronic engineering, 36(1-4), 1997, pp. 223-226
SIMPLIFIED METHOD TO CALCULATE THE BAND BENDING AND THE SUBBAND ENERGIES IN MOS CAPACITORS
Authors: MUELLER HH SCHULZ MJ
Citation: Hh. Mueller et Mj. Schulz, SIMPLIFIED METHOD TO CALCULATE THE BAND BENDING AND THE SUBBAND ENERGIES IN MOS CAPACITORS, I.E.E.E. transactions on electron devices, 44(9), 1997, pp. 1539-1543
CONDUCTANCE MODULATION OF SUBMICROMETER METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS BY SINGLE-ELECTRON TRAPPING
Authors: MUELLER HH SCHULZ M
Citation: Hh. Mueller et M. Schulz, CONDUCTANCE MODULATION OF SUBMICROMETER METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS BY SINGLE-ELECTRON TRAPPING, Journal of applied physics, 79(8), 1996, pp. 4178-4186
INDIVIDUAL INTERFACE TRAPS AT THE SI-SIO2 INTERFACE
Authors: MUELLER HH SCHULZ M
Citation: Hh. Mueller et M. Schulz, INDIVIDUAL INTERFACE TRAPS AT THE SI-SIO2 INTERFACE, Journal of materials science. Materials in electronics, 6(2), 1995, pp. 65-74
CONDUCTANCE MODULATION BY SINGLE-ELECTRON TRAPPING IN SUB-MU-M MOSFETS
Authors: MUELLER HH SCHIRL U SCHULZ M
Citation: Hh. Mueller et al., CONDUCTANCE MODULATION BY SINGLE-ELECTRON TRAPPING IN SUB-MU-M MOSFETS, Microelectronic engineering, 28(1-4), 1995, pp. 163-166
INDIVIDUAL INTERFACE TRAPS AT THE SI-SIO2 INTERFACE
Authors: MUELLER HH SCHULZ M
Citation: Hh. Mueller et M. Schulz, INDIVIDUAL INTERFACE TRAPS AT THE SI-SIO2 INTERFACE, Journal of materials science. Materials in electronics, 5(6), 1994, pp. 329-338
EVALUATION OF THE COULOMB ENERGY FOR SINGLE-ELECTRON INTERFACE TRAPPING IN SUB-MU-M METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
Authors: MUELLER HH WORLE D SCHULZ M
Citation: Hh. Mueller et al., EVALUATION OF THE COULOMB ENERGY FOR SINGLE-ELECTRON INTERFACE TRAPPING IN SUB-MU-M METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS, Journal of applied physics, 75(6), 1994, pp. 2970-2979
COULOMB FREE-ENERGY FOR SINGLE-ELECTRON INTERFACE TRAPPING IN SUB-MU-M MOSFETS
Authors: MUELLER HH WORLE D SCHULZ M
Citation: Hh. Mueller et al., COULOMB FREE-ENERGY FOR SINGLE-ELECTRON INTERFACE TRAPPING IN SUB-MU-M MOSFETS, Microelectronic engineering, 22(1-4), 1993, pp. 181-184
WORK SKILLS FOR DISADVANTAGED AND UNPREPARED YOUTH AND ADULTS
Authors: WILGOSH L MUELLER HH
Citation: L. Wilgosh et Hh. Mueller, WORK SKILLS FOR DISADVANTAGED AND UNPREPARED YOUTH AND ADULTS, International journal for the advancement of counselling, 16(2), 1993, pp. 99-105
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