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Results: 1-15 |
Results: 15

Authors: FALTA J BAHR D MATERLIK G MULLER BH HORNVONHOEGEN M
Citation: J. Falta et al., X-RAY CHARACTERIZATION OF BURIED DELTA-LAYER, Surface review and letters, 5(1), 1998, pp. 145-149

Authors: MULLER BH LANTIER R SORBA L RUBINI S LAZZARINO M HEUN S BONANNI A FRANCIOSI A NAPOLITANI E ROMANATO F DRIGO A
Citation: Bh. Muller et al., LATTICE-MATCHED ZN1-YCDYSE INXGA1-XAS(001) HETEROSTRUCTURES/, Journal of crystal growth, 185, 1998, pp. 21-25

Authors: DEFRANCESCHI S BELTRAM F MARINELLI C SORBA L LAZZARINO M MULLER BH FRANCIOSI A
Citation: S. Defranceschi et al., TRULY OHMIC CONTACTS IN ENGINEERED AL SI/INGAAS(001) DIODES/, Applied physics letters, 72(16), 1998, pp. 1996-1998

Authors: MULLER BH LAFAY F DEMANGEL C PERRIN P TORDO N FLAMAND A LAFAYE P GUESDON JL
Citation: Bh. Muller et al., PHAGE-DISPLAYED AND SOLUBLE MOUSE SCFV FRAGMENTS NEUTRALIZE RABIES VIRUS, Journal of virological methods, 67(2), 1997, pp. 221-233

Authors: MULLER BH SCHMIDT T HENZLER M
Citation: Bh. Muller et al., GROWTH AND MELTING OF A PB MONOLAYER ON CU(111), Surface science, 376(1-3), 1997, pp. 123-132

Authors: BAHR D FALTA J MATERLIK G MULLER BH HORNVONHOEGEN M
Citation: D. Bahr et al., X-RAY INTERFACE CHARACTERIZATION OF GE-DELTA-LAYERS ON SI(001), Physica. B, Condensed matter, 221(1-4), 1996, pp. 96-100

Authors: FALTA J BAHR D MATERLIK G MULLER BH HORNVONHOEGEN M
Citation: J. Falta et al., TOWARDS PERFECT GE-DELTA LAYERS ON SI(001), Applied physics letters, 68(10), 1996, pp. 1394-1396

Authors: FALTA J GOG T MATERLIK G MULLER BH HORNVONHOEGEN M
Citation: J. Falta et al., INTERFACE ROUGHENING OF GE DELTA-LAYERS ON SI(111), Physical review. B, Condensed matter, 51(12), 1995, pp. 7598-7602

Authors: MULLER BH HETTINGER T
Citation: Bh. Muller et T. Hettinger, INFLUENCE AND ASSESSMENT OF HEAT RADIATION, Ergonomics, 38(1), 1995, pp. 128-137

Authors: HORNVONHOEGEN M MULLER BH ALFALOU A
Citation: M. Hornvonhoegen et al., STRAIN RELIEF BY MICROROUGHNESS IN SURFACTANT-MEDIATED GROWTH OF GE ON SI(001), Physical review. B, Condensed matter, 50(16), 1994, pp. 11640-11652

Authors: HORNVONHOEGEN M ALFALOU A MULLER BH KOHLER U ANDERSOHN L DAHLHEIMER B HENZLER M
Citation: M. Hornvonhoegen et al., SURFACTANT-STABILIZED STRAINED GE CONES ON SI(001), Physical review. B, Condensed matter, 49(4), 1994, pp. 2637-2650

Authors: HORNVONHOEGEN M POOK M ALFALOU A MULLER BH HENZLER M
Citation: M. Hornvonhoegen et al., SURFACE-MORPHOLOGY AND STRAIN RELIEF IN SURFACTANT-MEDIATED GROWTH OFGERMANIUM ON SILICON(111), Scanning microscopy, 7(2), 1993, pp. 481-488

Authors: MULLER BH
Citation: Bh. Muller, DEGRADATION KINETICS OF TOBACCO - SURVEY BY FAST THERMOGRAVIMETRY ANALYSIS, Journal of analytical and applied pyrolysis, 25, 1993, pp. 273-283

Authors: HORNVONHOEGEN M ALFALOU A PIETSCH H MULLER BH HENZLER M
Citation: M. Hornvonhoegen et al., FORMATION OF INTERFACIAL DISLOCATION NETWORK IN SURFACTANT-MEDIATED GROWTH OF GE ON SI(111) INVESTIGATED BY SPA-LEED .1., Surface science, 298(1), 1993, pp. 29-42

Authors: HORNVONHOEGEN M MULLER BH ALFALOU A HENZLER M
Citation: M. Hornvonhoegen et al., SURFACTANT-INDUCED REVERSIBLE CHANGES OF SURFACE-MORPHOLOGY, Physical review letters, 71(19), 1993, pp. 3170-3173
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