Authors:
MURAVJOV AV
STRIJBOS RC
WENCKEBACH WT
SHASTIN VN
Citation: Av. Muravjov et al., POPULATION-INVERSION OF LANDAU-LEVELS IN THE VALENCE-BAND OF SILICON IN CROSSED ELECTRIC AND MAGNETIC-FIELDS, Physica status solidi. b, Basic research, 205(2), 1998, pp. 575-585
Citation: E. Brundermann et al., TERAHERTZ EMISSION OF POPULATION-INVERTED HOT-HOLES IN SINGLE-CRYSTALLINE SILICON, Applied physics letters, 73(6), 1998, pp. 723-725
Citation: Av. Muravjov et Vn. Shastin, THE AMPLIFICATION OF FAR-INFRARED RADIATION ON OPTICALLY-EXCITED P-TYPE GERMANIUM, International journal of infrared and millimeter waves, 17(2), 1996, pp. 345-348
Authors:
SHASTIN VN
ORLOVA EE
MURAVJOV AV
PAVLOV SG
ZHUKAVIN RH
Citation: Vn. Shastin et al., INFLUENCE OF SHALLOW ACCEPTOR STATES ON THE OPERATION OF THE FIR HOT HOLE P-GE LASER, International journal of infrared and millimeter waves, 17(2), 1996, pp. 359-363
Authors:
BRUNDERMANN E
ROSER HP
MURAVJOV AV
PAVLOV SG
SHASTIN VN
Citation: E. Brundermann et al., MODE FINE-STRUCTURE OF THE P-GE INTERVALENCEBAND LASER MEASURED BY HETERODYNE MIXING SPECTROSCOPY WITH AN OPTICALLY PUMPED RING GAS-LASER, Infrared physics & technology, 36(1), 1995, pp. 59-69