Authors:
MUSIKHIN SF
ILIN VI
RABIZO OV
BAKUEVA LG
SHARONOVA LV
Citation: Sf. Musikhin et al., LIGHT-ABSORPTION IN APERIODIC PBS C SUPERLATTICES IN AN ELECTRIC-FIELD/, Semiconductors (Woodbury, N.Y.), 32(7), 1998, pp. 762-764
Citation: Sa. Nemov et al., EFFECT OF IN ADDITIONS ON THE ELECTRICAL-PROPERTIES OF SN0.8GE(0.2)TETHIN-FILMS OBTAINED BY LASER SPUTTERING, Semiconductors, 30(2), 1996, pp. 179-180
Authors:
MUSIKHIN SF
BAKUEVA LG
ILIN VI
RABIZO OV
SHARONOVA LV
Citation: Sf. Musikhin et al., OPTICAL AND ELECTRICAL-PROPERTIES OF FIBONACCI PBS-C SUPERLATTICES FABRICATED BY PULSED-LASER DEPOSITION, Semiconductors, 29(3), 1995, pp. 245-249
Authors:
NEMOV SA
MUSIKHIN SF
POPOV DI
PROSHIN VI
SHAMSHUR DV
Citation: Sa. Nemov et al., SUPERCONDUCTING AND ELECTROPHYSICAL PROPE RTIES OF SN1-XGEXTE-IN THIN-FILMS IN SOLID-SOLUTIONS, Fizika tverdogo tela, 37(11), 1995, pp. 3366-3373
Authors:
NEMOV SA
MUSIKHIN SF
PARFENEV RV
SVETLOV VN
POPOV DN
PROSHIN VI
SHAMSHUR DV
Citation: Sa. Nemov et al., EFFECT OF GE ADMIXTURES ON THE COMPONENT DISTRIBUTION AND SUPERCONDUCTING TRANSITION IN SN1-ZPBZTE-IN FILMS, Fizika tverdogo tela, 37(11), 1995, pp. 3523-3525
Authors:
POPOV DI
MUSIKHIN SF
NEMOV SA
PARFENEV RV
MAKAROVA TL
SVETLOV VN
Citation: Di. Popov et al., ELECTROPHYSICAL PROPERTIES AND THE DISTRI BUTION OF SN((1-Z))GEZTE-INSOLID-SOLUTION COMPONENTS IN FILMS PREPARED BY THE PULSE LASER SPRAYING TECHNIQUE, Fizika tverdogo tela, 37(1), 1995, pp. 194-205
Authors:
BAKUEVA LG
ILIN VI
MUSIKHIN SF
RABISO OV
SHARONOVA LV
GIRICH AV
Citation: Lg. Bakueva et al., SUPERLATTICES OF THE PBS-CDS TYPE FORMED BY LASER EVAPORATION IN VACUUM (VOL 27, PG 1027-1028, 1993), Semiconductors, 28(5), 1994, pp. 530-530
Authors:
MUSIKHIN SF
BAKUEVA LG
ILIN WI
RABIZO OV
SHARONOVA LV
Citation: Sf. Musikhin et al., OPTICAL-PROPERTIES OF PBS CDS SUPERLATTICES GROWN BY PULSED-LASER EVAPORATION/, Superlattices and microstructures, 15(4), 1994, pp. 495-498
Authors:
MUSIKHIN SF
NEMOV SA
PROSHIN VI
SEMIN IE
SHAMSHUR DV
BEREZIN AV
IMAMKULIEV SD
Citation: Sf. Musikhin et al., ELECTRICAL-PROPERTIES OF (SN0.8GE0.2)1-XINXTE FILMS FORMED BY A LASER-EVAPORATION METHOD, Semiconductors, 27(3), 1993, pp. 288-290
Authors:
BAKUEVA LG
ILIN VI
MUSIKHIN SF
SHARONOVA LV
Citation: Lg. Bakueva et al., DIAMOND-LIKE FILMS FORMED BY LASER EVAPORATION AND MULTILAYER STRUCTURES BASED ON THEM, Semiconductors, 27(11-12), 1993, pp. 1029-1030