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Results: 26-33/33
Authors:
BRISSET C
DOLLFUS P
MUSSEAU O
LERAY JL
HESTO P
Citation: C. Brisset et al., THEORETICAL-STUDY OF SEUS IN 0.25-MU-M FULLY-DEPLETED CMOS SOI TECHNOLOGY, IEEE transactions on nuclear science, 41(6), 1994, pp. 2297-2303
Authors:
BLANQUART L
DELPIERRE P
HABRARD MC
MEKKAOUI A
MOUTHUY T
DENTAN M
DELAGNES E
FOURCHES N
ROUGER M
TRUCHE R
DELEVOYE E
DEPONTCHARRA J
BLANC JP
FLAMENT O
LERAY JL
MUSSEAU O
Citation: L. Blanquart et al., STUDY OF PROTON RADIATION EFFECTS ON ANALOG IC DESIGNED FOR HIGH-ENERGY PHYSICS IN A BICMOS-JFET RADHARD SOI TECHNOLOGY, IEEE transactions on nuclear science, 41(6), 1994, pp. 2525-2529
Authors:
COIC YM
MUSSEAU O
LERAY JL
Citation: Ym. Coic et al., A STUDY OF RADIATION VULNERABILITY OF FERROELECTRIC MATERIAL AND DEVICES, IEEE transactions on nuclear science, 41(3), 1994, pp. 495-502
Authors:
MUSSEAU O
LERAY JL
FERLETCAVROIS V
COIC YM
GIFFARD B
Citation: O. Musseau et al., SEU IN SOI SRAMS - A STATIC MODEL, IEEE transactions on nuclear science, 41(3), 1994, pp. 607-612
Authors:
BRISSET C
DOLLFUS P
HESTO P
MUSSEAU O
Citation: C. Brisset et al., MONTE-CARLO SIMULATION OF THE DYNAMIC BEHAVIOR OF A CMOS - INVERTER STRUCK BY A HEAVY-ION, IEEE transactions on nuclear science, 41(3), 1994, pp. 619-624
Authors:
HESTO P
BRISSET C
MUSSEAU O
DOLLFUS P
Citation: P. Hesto et al., MONTE-CARLO MODELING OF THE EFFECT OF AN IONIZING PARTICLE ON THE BEHAVIOR OF A MISFET SOI/, Annales de chimie, 18(2), 1993, pp. 101-112
Authors:
MUSSEAU O
Citation: O. Musseau, CIRCUITS AND HARDENED TECHNOLOGIES - INFL UENCE OF THE ASSEMBLY RULES, Onde electrique, 73(6), 1993, pp. 74-75
Authors:
DENTAN M
DELAGNES E
FOURCHES N
ROUGER M
HABRARD MC
BLANQUART L
DELPIERRE P
POTHEAU R
TRUCHE R
BLANC JP
DELEVOYE E
GAUTIER J
PELLOIE JL
DEPONTCHARRA J
FLAMENT O
LERAY JL
MARTIN JL
MONTARON J
MUSSEAU O
Citation: M. Dentan et al., STUDY OF A CMOS-JFET-BIPOLAR RADIATION-HARD ANALOG-DIGITAL TECHNOLOGYSUITABLE FOR HIGH-ENERGY PHYSICS ELECTRONICS, IEEE transactions on nuclear science, 40(6), 1993, pp. 1555-1560